CSD17313Q2TAlternatives & Equivalent Parts

About CSD17313Q2T

CSD17313Q2T is a MOSFET (N-Channel) component manufactured by Texas Instruments. It comes in a Other package. Below you'll find known alternative and equivalent parts that can serve as replacements in your design.

Need pricing on these alternatives?

Get one quote covering all 10 alternatives for CSD17313Q2T — response within 24 hours.

Specification Comparison

ParameterCSD17313Q2TSource293D106X9063E2TE3CSD17507Q5A74438336010C2012X5R1H475K125ABCSD17313Q2CSD17313Q2Q1CSD17318Q2CSD17311Q5CSD17310Q5ACSD17312Q5
ManufacturerTexas InstrumentsVishayTexas InstrumentsWürth ElektronikTDKTexas InstrumentsTexas InstrumentsTexas InstrumentsTexas InstrumentsTexas InstrumentsTexas Instruments
Package TypeOtherCapacitor Moulded PolarisedOtherInductors ChipCapacitor Chip Non-polarisedOtherOtherOtherOtherOtherOther
Pin Count82822888888
Temperature Range-55.0°C ~ 150.0°C-55.0°C ~ 125.0°C-55.0°C ~ 150.0°C-40.0°C ~ 125.0°C-55.0°C ~ 85.0°C-55.0°C ~ 150.0°C-55.0°C ~ 150.0°C-55.0°C ~ 150.0°C-55.0°C ~ 150.0°C-55.0°C ~ 150.0°C-55.0°C ~ 150.0°C
Price$0.2163$3.1700$0.2900$0.9424$0.0999$0.1440$0.0955$0.1130$0.8908$0.1383$0.4280
StockIn StockIn StockIn StockIn StockIn StockIn StockIn StockIn StockIn StockIn StockIn Stock
LifecycleACTIVEACTIVEACTIVEACTIVENOT RECOMMENDEDACTIVEOBSOLETEACTIVEACTIVEACTIVEACTIVE
Electrical Parameters
Pbfree CodeYes—Yes—YesYesYesYesYesYesYes
Date Of Intro2016-03-24——————2017-07-19———
YTEOL1571515315015151515
Avalanche Energy Rating (Eas)18 mJ—45 mJ——18 mJ18 mJ7.7 mJ638 mJ168 mJ845 mJ
Case ConnectionDRAIN—DRAIN——DRAINDRAINDRAINDRAINDRAINDRAIN
ConfigurationSINGLE WITH BUILT-IN DIODE—SINGLE WITH BUILT-IN DIODE——SINGLE WITH BUILT-IN DIODESINGLE WITH BUILT-IN DIODESINGLE WITH BUILT-IN DIODESINGLE WITH BUILT-IN DIODESINGLE WITH BUILT-IN DIODESINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min30 V—30 V——30 V30 V30 V30 V30 V30 V
Drain Current-Max (ID)5 A—65 A——5 A5 A25 A100 A100 A100 A
Drain-source On Resistance-Max0.042 Ω—0.0161 Ω——0.042 Ω0.042 Ω0.03 Ω0.0031 Ω0.0078 Ω0.0024 Ω
FET TechnologyMETAL-OXIDE SEMICONDUCTOR—METAL-OXIDE SEMICONDUCTOR——METAL-OXIDE SEMICONDUCTORMETAL-OXIDE SEMICONDUCTORMETAL-OXIDE SEMICONDUCTORMETAL-OXIDE SEMICONDUCTORMETAL-OXIDE SEMICONDUCTORMETAL-OXIDE SEMICONDUCTOR
Feedback Cap-Max (Crss)17 pF—30 pF——17 pF17 pF51 pF110 pF77 pF120 pF
JESD-30 CodeR-PDSO-N8—R-PDSO-N8——R-PDSO-N8S-PDSO-N6S-PDSO-N6R-PDSO-N8R-PDSO-N8R-PDSO-N8
JESD-609 Codee4e3e3—e3e4e3e4e3e3e3
Number of Elements1—1——111111
Operating ModeENHANCEMENT MODE—ENHANCEMENT MODE——ENHANCEMENT MODEENHANCEMENT MODEENHANCEMENT MODEENHANCEMENT MODEENHANCEMENT MODEENHANCEMENT MODE
Package Body MaterialPLASTIC/EPOXY—PLASTIC/EPOXY——PLASTIC/EPOXYPLASTIC/EPOXYPLASTIC/EPOXYPLASTIC/EPOXYPLASTIC/EPOXYPLASTIC/EPOXY
Package ShapeRECTANGULARRECTANGULAR PACKAGERECTANGULAR—RECTANGULAR PACKAGERECTANGULARSQUARESQUARERECTANGULARRECTANGULARRECTANGULAR
Package StyleSMALL OUTLINESMTSMALL OUTLINESMTSMTSMALL OUTLINESMALL OUTLINESMALL OUTLINESMALL OUTLINESMALL OUTLINESMALL OUTLINE
Peak Reflow Temperature (Cel)260—260——260260260260260260
Polarity/Channel TypeN-CHANNEL—N-CHANNEL——N-CHANNELN-CHANNELN-CHANNELN-CHANNELN-CHANNELN-CHANNEL
Pulsed Drain Current-Max (IDM)20 A—85 A——20 A20 A68 A200 A134 A200 A
Surface MountYESYESYESYESYESYESYESYESYESYESYES
Terminal FinishNickel/Palladium/Gold (Ni/Pd/Au)Matte Tin (Sn) - with Nickel (Ni) barrierMatte Tin (Sn)—Matte Tin (Sn) - with Nickel (Ni) barrierNickel/Palladium/Gold (Ni/Pd/Au)Matte Tin (Sn)Nickel/Palladium/Gold (Ni/Pd/Au)Matte Tin (Sn)Matte Tin (Sn)Matte Tin (Sn)
Terminal FormNO LEAD—NO LEAD——NO LEADNO LEADNO LEADNO LEADNO LEADNO LEAD
Terminal PositionDUAL—DUAL——DUALDUALDUALDUALDUALDUAL
Time@Peak Reflow Temperature-Max (s)30—30——303030303030
Transistor ApplicationSWITCHING—SWITCHING——SWITCHINGSWITCHINGSWITCHINGSWITCHINGSWITCHINGSWITCHING
Transistor Element MaterialSILICON—SILICON——SILICONSILICONSILICONSILICONSILICONSILICON
Reach Compliance Code—Compliant——Compliant——————
Additional Feature—ESR AND RIPPLE CURRENT IS MEASURED AT 100KHZAVALANCHE RATED———AVALANCHE RATED—AVALANCHE RATEDAVALANCHE RATEDAVALANCHE RATED
Capacitance—10 µF——4.7 µF——————
Capacitor Type—TANTALUM CAPACITOR——CERAMIC CAPACITOR——————
Dielectric Material—TANTALUM (DRY/SOLID)——CERAMIC——————
ESR—1000 mΩ—————————
Height—4 mm——1.25 mm——————
Leakage Current—0.0063 mA—————————
Mounting Feature—SURFACE MOUNT——SURFACE MOUNT——————
Negative Tolerance—10%——10%——————
Packing Method—TR, Embossed Plastic, 7 Inch—TR, Embossed Plastic, 7 InchTR, 7 Inch——————
Polarity—POLARIZED—————————
Positive Tolerance—10%——10%——————
Rated (DC) Voltage (URdc)—63 V——50 V——————
Ripple Current—410 mA—————————
Size Code—2917——0805——————
Tan Delta—0.06—————————
Terminal Shape—J BEND—ONE SURFACEWRAPAROUND——————
Power Dissipation-Max (Abs)——39 W——17 W17 W—3.2 W3.1 W3.2 W
Qualification Status——Not Qualified——Not Qualified——Not QualifiedNot QualifiedNot Qualified
Case/Size Code———1212———————
Construction———Rectangular———————
Core Material———IRON ALLOY———————
DC Resistance———0.032 Ω———————
Inductance-Nom (L)———1 µH———————
Inductor Application———POWER INDUCTOR———————
Inductor Type———GENERAL PURPOSE INDUCTOR———————
Number of Functions———1———————
Package Height———2 mm———————
Package Length———3 mm———————
Package Width———3 mm———————
Rated Current-Max———4 A———————
Reference Standard———AEC-Q200——AEC-Q101————
Self Resonance Frequency———67 MHz———————
Shape/Size Description———RECTANGULAR PACKAGE———————
Shielded———YES———————
Special Feature———INDUCTANCE IS MEASURED AT 10 MILLI AMPERE———————
Terminal Placement———DUAL ENDED———————
Test Frequency———0.1 MHz———————
Tolerance———20%———————
Multilayer————Yes——————
Temperature Characteristics Code————X5R——————
Temperature Coefficient————15% ppm/°C——————
## CSD17318Q2 Alternates Showing results———————Image———

Cells highlighted in yellow indicate differing values across parts. Always verify with official datasheets before substitution.

Need pricing on these alternatives?

Get one quote covering all 10 alternatives for CSD17313Q2T — response within 24 hours.

Quick Links

CSD17313Q2by Texas Instruments

Power Field-Effect Transistor, 5A I(D), 30V, 0.042ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

CSD17313Q2Q1by Texas Instruments

Power Field-Effect Transistor, 5A I(D), 30V, 0.042ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

CSD17318Q2by Texas Instruments

Power Field-Effect Transistor, 25A I(D), 30V, 0.03ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

CSD17311Q5by Texas Instruments

Power Field-Effect Transistor, 100A I(D), 30V, 0.0031ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

CSD17310Q5Aby Texas Instruments

Power Field-Effect Transistor, 100A I(D), 30V, 0.0078ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

CSD17312Q5by Texas Instruments

Power Field-Effect Transistor, 100A I(D), 30V, 0.0024ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

Why Look for Alternatives?

Finding alternatives for CSD17313Q2T is essential for supply chain resilience. Component shortages, long lead times, and end-of-life notices can disrupt production schedules. Having verified alternative parts ensures your designs remain manufacturable.

When evaluating CSD17313Q2T replacements, consider key parameters such as package compatibility, electrical specifications, and operating temperature range. Our engineering team can help verify pin-to-pin compatibility for your specific application.

Can't Find What You Need?

Our sourcing team can help find compatible alternatives for CSD17313Q2T. Get expert recommendations within 24 hours.

FAQ

What is equivalent to CSD17313Q2T?

Known equivalents for CSD17313Q2T include 293D106X9063E2TE3, CSD17507Q5A, 74438336010. Contact FindMyChip for a full compatibility analysis for your specific application.

Can I use a different manufacturer's part instead of CSD17313Q2T?

In many cases, yes. Cross-manufacturer alternatives exist for most standard components. However, always verify pin compatibility, electrical specs, and package dimensions before substituting in production.

How do I verify CSD17313Q2T alternatives?

Compare the datasheet specifications including pinout, voltage ratings, timing parameters, and package dimensions. FindMyChip's engineering team can help with compatibility verification — submit an RFQ to get started.