CSD17313Q2T Texas Instruments MOSFET (N-Channel) (Other) In Stock
30V, N ch NexFET MOSFET™, single SON2x2, 32mOhm
- Manufacturer
- Texas Instruments
- Package
- Other
- Pin Count
- 8
- Lifecycle
- ACTIVE
- Datasheet
- CSD17313Q2T Datasheet PDF
- Category
- MOSFET (N-Channel)
- Price
- From $0.2163(MOQ 1)
- Temp Range
- -55.0°C to 150.0°C
- RoHS
- Compliant
- Lead Time
- 3–7 business days
- Shipping
- DHL Express · Worldwide
Specifications
| Pbfree Code | Yes |
| Date Of Intro | 2016-03-24 |
| YTEOL | 15 |
| Avalanche Energy Rating (Eas) | 18mJ |
| Case Connection | DRAIN |
| Configuration | SINGLE WITH BUILT-IN DIODE |
| DS Breakdown Voltage-Min | 30V |
| Drain Current-Max (ID) | 5A |
| Drain-source On Resistance-Max | 0.042Ω |
| FET Technology | METAL-OXIDE SEMICONDUCTOR |
| Feedback Cap-Max (Crss) | 17pF |
| JESD-30 Code | R-PDSO-N8 |
| JESD-609 Code | e4 |
| Number of Elements | 1 |
| Operating Mode | ENHANCEMENT MODE |
| Package Body Material | PLASTIC/EPOXY |
| Package Shape | RECTANGULAR |
| Package Style | SMALL OUTLINE |
| Peak Reflow Temperature (Cel) | 260 |
| Polarity/Channel Type | N-CHANNEL |
| Pulsed Drain Current-Max (IDM) | 20A |
| Surface Mount | YES |
| Terminal Finish | Nickel/Palladium/Gold (Ni/Pd/Au) |
| Terminal Form | NO LEAD |
| Terminal Position | DUAL |
| Time@Peak Reflow Temperature-Max (s) | 30 |
| Transistor Application | SWITCHING |
| Transistor Element Material | SILICON |
| Package | Other |
Compliance & Regulatory
| RoHS Status | Compliant |
| Moisture Sensitivity Level | MSL 1 |
| ECCN | EAR99 |
| HTS Code | 8541.29.00.95 |
Alternate & Equivalent Parts
Compatible alternatives and drop-in replacements for CSD17313Q2T:
suggested
Power Field-Effect Transistor, 5A I(D), 30V, 0.042ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
Power Field-Effect Transistor, 5A I(D), 30V, 0.042ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
Power Field-Effect Transistor, 25A I(D), 30V, 0.03ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
Power Field-Effect Transistor, 100A I(D), 30V, 0.0031ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
Power Field-Effect Transistor, 100A I(D), 30V, 0.0078ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
Power Field-Effect Transistor, 100A I(D), 30V, 0.0024ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
Frequently Asked Questions
What is the price of CSD17313Q2T?
CSD17313Q2T is priced from $0.2163 USD depending on quantity. Submit an RFQ on FindMyChip for the best current pricing from authorized China distributors.
Is CSD17313Q2T in stock?
CSD17313Q2T is currently available at FindMyChip. We maintain stock from authorized distributors and ship worldwide with typical 3-7 business day lead time.
Where can I buy CSD17313Q2T?
You can buy CSD17313Q2T from FindMyChip, a B2B electronic component platform sourcing from China distributors. We offer competitive pricing and low MOQ for CSD17313Q2T from Texas Instruments.
What is the datasheet for CSD17313Q2T?
The official CSD17313Q2T datasheet from Texas Instruments contains full specifications including pin configuration, electrical characteristics, and application notes. Download it directly from the datasheet section above.
What package does CSD17313Q2T come in?
CSD17313Q2T is available in Other packaging. See the package diagram and pinout above for detailed dimensional information.
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About Texas Instruments
Texas Instruments (TI) is a global semiconductor company headquartered in Dallas, Texas. TI designs and manufactures analog and embedded processing chips used in industrial, automotive, consumer, communications, and enterprise systems.
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 1+ | $1.8700 | $1.87 |
| 10+ | $0.9700 | $9.70 |
| 25+ | $0.8100 | $20.25 |
| 100+ | $0.5500 | $55.00 |
| 500+ | $0.4980 | $249.00 |
| 925+ | $0.2163 | $200.08 |
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