BUK98180-100A Nexperia Integrated Circuit (SOT223 (3-Pin)) In Stock

BUK98180-100A is a Nexperia N-channel MOSFET in SOT223. It is rated for 100V, 4.6A, and 0.201 ohm max on-resistance. Use it for switching, load control, and power management.

ACTIVEIntegrated CircuitVerified Jul 2026
Package / Visual Reference
BUK98180-100ASOT223 (3-Pin)
Quick Facts
Manufacturer
Nexperia
Package
SOT223 (3-Pin)
Pin Count
4
Lifecycle
ACTIVE
Category
Integrated Circuit
Temp Range
-55.0°C to 150.0°C
RoHS
Compliant
Lead Time
3–7 business days
Shipping
DHL Express · Worldwide

Key Features

  • 100V drain-source breakdown voltage for higher-voltage switching
  • 4.6A maximum drain current for moderate power loads
  • 0.201 ohm maximum drain-source on-resistance
  • Logic-level compatible gate drive for direct control circuits
  • Single MOSFET with built-in diode configuration
  • 16mJ avalanche energy rating for transient robustness

Applications

BUK98180-100A is used in low- and medium-power switching stages where a logic-level N-channel MOSFET can control DC loads from a compact PCB footprint. Typical applications include load switches, relay or solenoid drivers, distributed power management, and industrial control boards requiring 100V voltage margin.

Specifications

Date Of Intro2017-02-01
YTEOL5.6
Additional FeatureLOGIC LEVEL COMPATIBLE
Avalanche Energy Rating (Eas)16mJ
Case ConnectionDRAIN
ConfigurationSINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min100V
Drain Current-Max (ID)4.6A
Drain-source On Resistance-Max0.201Ω
FET TechnologyMETAL-OXIDE SEMICONDUCTOR
Feedback Cap-Max (Crss)50pF
JESD-30 CodeR-PDSO-G4
JESD-609 Codee3
Number of Elements1
Operating ModeENHANCEMENT MODE
Package Body MaterialPLASTIC/EPOXY
Package ShapeRECTANGULAR
Package StyleSMALL OUTLINE
Peak Reflow Temperature (Cel)260
Polarity/Channel TypeN-CHANNEL
Power Dissipation-Max (Abs)8W
Pulsed Drain Current-Max (IDM)18A
Reference StandardAEC-Q101; IEC-60134
Surface MountYES
Terminal FinishTin (Sn)
Terminal FormGULL WING
Terminal PositionDUAL
Time@Peak Reflow Temperature-Max (s)30
Transistor ApplicationSWITCHING
Transistor Element MaterialSILICON
PackageSOT223 (3-Pin)

Compliance & Regulatory

RoHS StatusCompliant
Lead-FreeYes (Pb-Free)
Moisture Sensitivity LevelMSL 1
ECCNEAR99
Country of OriginMainland China

Datasheet

BUK98180-100A Datasheet Download

Official datasheet from Nexperia

Alternate & Equivalent Parts

No known alternates. Submit an RFQ and our team can suggest alternatives.

Frequently Asked Questions

How much voltage and load current margin does BUK98180-100A provide?

BUK98180-100A is specified with a 100V drain-source breakdown voltage and 4.6A maximum drain current, giving designers useful margin for DC switching loads.

For logic-driven power stages, why is this MOSFET practical?

The fetched specifications identify BUK98180-100A as logic-level compatible, with 0.201 ohm maximum on-resistance for efficient switching in controller-driven circuits.

Which assembly constraints should procurement and layout teams check?

The device is listed in an SOT223 mechanical format with 3 pins, so teams should confirm footprint, drain tab routing, and reel handling before release.

Can BUK98180-100A support inductive or transient-prone switching loads?

The part includes a 16mJ avalanche energy rating and built-in diode configuration, which can help designers evaluate robustness for protected inductive switching circuits.

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AvailabilityIn Stock
Reference Price (USD)
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pcs

In Stock · 24h Response · Worldwide Shipping

Lead Time3-7 business days
MOQFrom 1 piece
ShippingDHL / FedEx / UPS
OriginChina (Authorized)

Response within 24 hours · Worldwide shipping

The anti-counterfeit verification gave us confidence we'd never had with other China suppliers.

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Rajesh Patel
Procurement Manager, VoltEdge Energy, India