BUK98180-100A Nexperia Integrated Circuit (SOT223 (3-Pin)) In Stock
BUK98180-100A is a Nexperia N-channel MOSFET in SOT223. It is rated for 100V, 4.6A, and 0.201 ohm max on-resistance. Use it for switching, load control, and power management.
- Manufacturer
- Nexperia
- Package
- SOT223 (3-Pin)
- Pin Count
- 4
- Lifecycle
- ACTIVE
- Datasheet
- BUK98180-100A Datasheet PDF
- Category
- Integrated Circuit
- Temp Range
- -55.0°C to 150.0°C
- RoHS
- Compliant
- Lead Time
- 3–7 business days
- Shipping
- DHL Express · Worldwide
What are the key features of BUK98180-100A?
- 100V drain-source breakdown voltage for higher-voltage switching
- 4.6A maximum drain current for moderate power loads
- 0.201 ohm maximum drain-source on-resistance
- Logic-level compatible gate drive for direct control circuits
- Single MOSFET with built-in diode configuration
- 16mJ avalanche energy rating for transient robustness
What is BUK98180-100A used for?
BUK98180-100A is used in low- and medium-power switching stages where a logic-level N-channel MOSFET can control DC loads from a compact PCB footprint. Typical applications include load switches, relay or solenoid drivers, distributed power management, and industrial control boards requiring 100V voltage margin.
What are the specifications of BUK98180-100A?
| Date Of Intro | 2017-02-01 |
| YTEOL | 5.6 |
| Additional Feature | LOGIC LEVEL COMPATIBLE |
| Avalanche Energy Rating (Eas) | 16mJ |
| Case Connection | DRAIN |
| Configuration | SINGLE WITH BUILT-IN DIODE |
| DS Breakdown Voltage-Min | 100V |
| Drain Current-Max (ID) | 4.6A |
| Drain-source On Resistance-Max | 0.201Ω |
| FET Technology | METAL-OXIDE SEMICONDUCTOR |
| Feedback Cap-Max (Crss) | 50pF |
| JESD-30 Code | R-PDSO-G4 |
| JESD-609 Code | e3 |
| Number of Elements | 1 |
| Operating Mode | ENHANCEMENT MODE |
| Package Body Material | PLASTIC/EPOXY |
| Package Shape | RECTANGULAR |
| Package Style | SMALL OUTLINE |
| Peak Reflow Temperature (Cel) | 260 |
| Polarity/Channel Type | N-CHANNEL |
| Power Dissipation-Max (Abs) | 8W |
| Pulsed Drain Current-Max (IDM) | 18A |
| Reference Standard | AEC-Q101; IEC-60134 |
| Surface Mount | YES |
| Terminal Finish | Tin (Sn) |
| Terminal Form | GULL WING |
| Terminal Position | DUAL |
| Time@Peak Reflow Temperature-Max (s) | 30 |
| Transistor Application | SWITCHING |
| Transistor Element Material | SILICON |
| Package | SOT223 (3-Pin) |
Compliance & Regulatory
| RoHS Status | Compliant |
| Lead-Free | Yes (Pb-Free) |
| Moisture Sensitivity Level | MSL 1 |
| ECCN | EAR99 |
| Country of Origin | Mainland China |
Where can I find the BUK98180-100A datasheet?
BUK98180-100A Datasheet DownloadOfficial datasheet from Nexperia
What are equivalent replacements for BUK98180-100A?
No known alternates. Submit an RFQ and our team can suggest alternatives.
Frequently Asked Questions
Which power-switching tasks fit the BUK98180-100A MOSFET?
This N-channel device is rated for 100 V and 4.6 A, making it relevant to load switching and power management within its thermal limits.
How does on-resistance affect conduction loss in this part?
The listed maximum drain-source on-resistance is 0.201 Ω, so designers should calculate dissipation at the intended current and verify SOT-223 thermal performance.
What qualification details matter for an avalanche-capable replacement?
Confirm the 3-pin SOT-223 footprint, 16 mJ avalanche rating, 100 V requirement, 4.6 A load, lifecycle, temperature grade, and supplier traceability.
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