B5817WS-TPAlternatives & Equivalent Parts
About B5817WS-TP
B5817WS-TP is a Schottky Diode component manufactured by Micro Commercial Components (MCC). It comes in a Small Outline Diode package. Below you'll find known alternative and equivalent parts that can serve as replacements in your design.
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Specification Comparison
| Parameter | B5817WS-TPSource | LM358D | SI2301 | PSG01546 |
|---|---|---|---|---|
| Manufacturer | Micro Commercial Components (MCC) | STMicroelectronics | Micro Commercial Components (MCC) | PRO SIGNAL |
| Package Type | Small Outline Diode | Small Outline Packages | Other | Other |
| Pin Count | 2 | 8 | 3 | 3 |
| Temperature Range | -65.0°C ~ 125.0°C | ~ 70.0°C | -55.0°C ~ 150.0°C | — |
| Price | $0.0219 | $0.0700 | $0.0078 | — |
| Stock | In Stock | In Stock | In Stock | In Stock |
| Lifecycle | ACTIVE | ACTIVE | ACTIVE | ACTIVE |
| Electrical Parameters | ||||
| Pbfree Code | Yes | — | — | — |
| YTEOL | 6.1 | 5.75 | 5.15 | — |
| Application | GENERAL PURPOSE | — | — | — |
| Configuration | SINGLE | — | SINGLE WITH BUILT-IN DIODE | — |
| Diode Element Material | SILICON | — | — | — |
| Diode Type | RECTIFIER DIODE | — | — | — |
| Forward Voltage-Max (VF) | 0.45 V | — | — | — |
| JESD-30 Code | R-PDSO-G2 | R-PDSO-G8 | R-PDSO-G3 | — |
| JESD-609 Code | e3 | e4 | e3 | — |
| Non-rep Pk Forward Current-Max | 10 A | — | — | — |
| Number of Elements | 1 | — | 1 | — |
| Number of Phases | 1 | — | — | — |
| Output Current-Max | 1 A | — | — | — |
| Package Body Material | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | — |
| Package Shape | RECTANGULAR | RECTANGULAR | RECTANGULAR | — |
| Package Style | SMALL OUTLINE | SMALL OUTLINE | SMALL OUTLINE | — |
| Peak Reflow Temperature (Cel) | 260 | 260 | 260 | — |
| Power Dissipation-Max | 0.25 W | — | — | — |
| Qualification Status | Not Qualified | Not Qualified | Not Qualified | — |
| Rep Pk Reverse Voltage-Max | 20 V | — | — | — |
| Reverse Current-Max | 200 µA | — | — | — |
| Surface Mount | YES | YES | YES | — |
| Technology | SCHOTTKY | BIPOLAR | — | — |
| Terminal Finish | Matte Tin (Sn) | Nickel/Palladium/Gold (Ni/Pd/Au) | Tin (Sn) | — |
| Terminal Form | GULL WING | GULL WING | GULL WING | — |
| Terminal Position | DUAL | DUAL | DUAL | — |
| Time@Peak Reflow Temperature-Max (s) | 40 | 30 | 10 | — |
| Factory Lead Time | — | 8 Weeks | — | — |
| Amplifier Type | — | OPERATIONAL AMPLIFIER | — | — |
| Architecture | — | VOLTAGE-FEEDBACK | — | — |
| Average Bias Current-Max (IIB) | — | 0.2 µA | — | — |
| Bias Current-Max (IIB) @25C | — | 0.15 µA | — | — |
| Common-mode Reject Ratio-Min | — | 70 dB | — | — |
| Common-mode Reject Ratio-Nom | — | 85 dB | — | — |
| Frequency Compensation | — | YES | — | — |
| Input Offset Voltage-Max | — | 9000 µV | — | — |
| Low-Bias | — | NO | — | — |
| Low-Offset | — | NO | — | — |
| Micropower | — | NO | — | — |
| Number of Functions | — | 8 | — | — |
| Package Equivalence Code | — | SOP8,.25 | — | — |
| Packing Method | — | TUBE | — | — |
| Power | — | NO | — | — |
| Programmable Power | — | NO | — | — |
| Slew Rate-Min | — | 0.3 V/us | — | — |
| Slew Rate-Nom | — | 0.6 V/us | — | — |
| Supply Current-Max | — | 2 mA | — | — |
| Supply Voltage Limit-Max | — | 32 V | — | — |
| Supply Voltage-Nom (Vsup) | — | 5 V | — | — |
| Temperature Grade | — | COMMERCIAL | — | — |
| Terminal Pitch | — | 1.27 mm | — | — |
| Unity Gain BW-Nom | — | 1100 | — | — |
| Voltage Gain-Min | — | 25000 | — | — |
| Wideband | — | NO | — | — |
| ## LM358D Alternates Showing results | — | Image | — | — |
| DS Breakdown Voltage-Min | — | — | 20 V | — |
| Drain Current-Max (ID) | — | — | 2.8 A | — |
| Drain-source On Resistance-Max | — | — | 0.12 Ω | — |
| FET Technology | — | — | METAL-OXIDE SEMICONDUCTOR | — |
| Feedback Cap-Max (Crss) | — | — | 175 pF | — |
| Operating Mode | — | — | ENHANCEMENT MODE | — |
| Polarity/Channel Type | — | — | P-CHANNEL | — |
| Power Dissipation Ambient-Max | — | — | 1.25 W | — |
| Power Dissipation-Max (Abs) | — | — | 1.25 W | — |
| Pulsed Drain Current-Max (IDM) | — | — | 10 A | — |
| Transistor Application | — | — | SWITCHING | — |
| Transistor Element Material | — | — | SILICON | — |
| Turn-off Time-Max (toff) | — | — | 110 ns | — |
| Turn-on Time-Max (ton) | — | — | 30 ns | — |
Cells highlighted in yellow indicate differing values across parts. Always verify with official datasheets before substitution.
Need pricing on these alternatives?
Get one quote covering all 3 alternatives for B5817WS-TP — response within 24 hours.
Quick Links
Why Look for Alternatives?
Finding alternatives for B5817WS-TP is essential for supply chain resilience. Component shortages, long lead times, and end-of-life notices can disrupt production schedules. Having verified alternative parts ensures your designs remain manufacturable.
When evaluating B5817WS-TP replacements, consider key parameters such as package compatibility, electrical specifications, and operating temperature range. Our engineering team can help verify pin-to-pin compatibility for your specific application.
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FAQ
What is equivalent to B5817WS-TP?
Known equivalents for B5817WS-TP include LM358D, SI2301, PSG01546. Contact FindMyChip for a full compatibility analysis for your specific application.
Can I use a different manufacturer's part instead of B5817WS-TP?
In many cases, yes. Cross-manufacturer alternatives exist for most standard components. However, always verify pin compatibility, electrical specs, and package dimensions before substituting in production.
How do I verify B5817WS-TP alternatives?
Compare the datasheet specifications including pinout, voltage ratings, timing parameters, and package dimensions. FindMyChip's engineering team can help with compatibility verification — submit an RFQ to get started.