SI2301 Micro Commercial Components (MCC) MOSFET (P-Channel) (Other) In Stock
MCC SI2301 is a P-channel MOSFET in SOT-23 package rated at -20 V drain-source breakdown voltage and 2.8 A continuous drain current. Its maximum on-resistance of 0.12 Ω enables efficient load switching and power management in compact designs. Available from stock worldwide at competitive pricing for high-volume applications.
- Manufacturer
- Micro Commercial Components (MCC)
- Package
- Other
- Pin Count
- 3
- Lifecycle
- ACTIVE
- Datasheet
- SI2301 Datasheet PDF
- Category
- MOSFET (P-Channel)
- Price
- From $0.0078(MOQ 3000)
- Temp Range
- -55.0°C to 150.0°C
- RoHS
- Compliant
- Lead Time
- 3–7 business days
- Shipping
- DHL Express · Worldwide
What are the key features of SI2301?
- P-channel MOSFET with -20 V breakdown voltage and 2.8 A drain current in compact SOT-23-3 package for space-constrained power designs
- Ultra-low 0.12 Ω drain-source on-resistance minimizing conduction losses in battery-powered load switching circuits
- Built-in body diode and low feedback capacitance (Crss 175 pF) enabling fast switching and reverse-current protection in a single SOT-23 device
What is SI2301 used for?
The SI2301 P-channel MOSFET is widely used in portable consumer electronics and battery-powered devices for load switching, reverse-polarity protection, and power-path management at voltages up to 20 V. Its compact SOT-23 package and 0.12 Ω on-resistance make it suitable for smartphone charging circuits, power banks, and wearable devices where board space and efficiency are critical. It also serves in DC motor control and LED driver applications requiring 2.8 A continuous current switching.
What are the specifications of SI2301?
| YTEOL | 5.15 |
| Configuration | SINGLE WITH BUILT-IN DIODE |
| DS Breakdown Voltage-Min | 20V |
| Drain Current-Max (ID) | 2.8A |
| Drain-source On Resistance-Max | 0.12Ω |
| FET Technology | METAL-OXIDE SEMICONDUCTOR |
| Feedback Cap-Max (Crss) | 175pF |
| JESD-30 Code | R-PDSO-G3 |
| JESD-609 Code | e3 |
| Number of Elements | 1 |
| Operating Mode | ENHANCEMENT MODE |
| Package Body Material | PLASTIC/EPOXY |
| Package Shape | RECTANGULAR |
| Package Style | SMALL OUTLINE |
| Peak Reflow Temperature (Cel) | 260 |
| Polarity/Channel Type | P-CHANNEL |
| Power Dissipation Ambient-Max | 1.25W |
| Power Dissipation-Max (Abs) | 1.25W |
| Pulsed Drain Current-Max (IDM) | 10A |
| Qualification Status | Not Qualified |
| Surface Mount | YES |
| Terminal Finish | Tin (Sn) |
| Terminal Form | GULL WING |
| Terminal Position | DUAL |
| Time@Peak Reflow Temperature-Max (s) | 10 |
| Transistor Application | SWITCHING |
| Transistor Element Material | SILICON |
| Turn-off Time-Max (toff) | 110ns |
| Turn-on Time-Max (ton) | 30ns |
| Package | Other |
Compliance & Regulatory
| RoHS Status | Compliant |
| Lead-Free | Yes (Pb-Free) |
| Moisture Sensitivity Level | MSL 1 |
| ECCN | EAR99 |
| HTS Code | 8541.29.00.95 |
| Country of Origin | Mainland China |
Where can I find the SI2301 datasheet?
SI2301 Datasheet DownloadOfficial datasheet from Micro Commercial Components (MCC)
What are equivalent replacements for SI2301?
Compatible alternatives and drop-in replacements for SI2301:
suggested
suggested
suggested
suggested
suggested
Frequently Asked Questions
What are the key electrical ratings of the SI2301 P-channel MOSFET?
The SI2301 has a drain-source breakdown voltage of -20 V, a maximum continuous drain current of 2.8 A, and a maximum drain-source on-resistance of 0.12 Ω. These ratings make it suitable for efficient low-voltage load switching and power management in battery-operated equipment.
How does the SI2301 in SOT-23 compare to larger P-channel MOSFETs for a 5 V USB load switch design?
In a 5 V USB load switch application, the SI2301 SOT-23 package with 0.12 Ω on-resistance and 2.8 A current rating provides adequate performance for USB 2.0 and USB 3.0 standard loads within a footprint of approximately 2.9 x 1.6 mm, offering a space saving of 60% versus SO-8 alternatives while maintaining low power dissipation.
Can SI2301 be used for reverse-polarity protection in a 12 V battery-powered design?
No, the SI2301 has a maximum rated drain-source voltage of only 20 V, which provides insufficient margin for transient events in automotive or industrial 12 V battery systems. For 12 V reverse-polarity protection requiring transient headroom above 20 V, designers should consider P-channel MOSFETs rated at 30 V or higher with comparable on-resistance specifications.
What is the feedback capacitance (Crss) of the SI2301, and why does it matter in switching circuits?
The SI2301 has a maximum feedback capacitance (Crss) of 175 pF. This Miller capacitance affects switching speed by adding gate charge during transitions; lower Crss values reduce switching losses at higher frequencies, and the 175 pF rating is well-suited for low-frequency load switching at speeds below 1 MHz in consumer power-path designs.
Related Guides
CSD87313DMS Synchronous Buck Power Stage Design Guide
Design a compact CSD87313DMS synchronous buck stage with practical guidance for loss, gate drive, PCB layout, EMI, thermal validation, and sourcing.
Aug 6, 2026
STEF05SGR eFuse Selection Guide for 5 V Overcurrent Protection
Choose STEF05SGR for 5 V overcurrent protection by checking current-limit margin, inrush, thermal loss, fault response, and sourcing.
Aug 6, 2026
C0402C103K3RACTU Selection Guide: Choosing a 10 nF 0402 MLCC
Select C0402C103K3RACTU by voltage margin, X7R behavior, tolerance, 0402 assembly risk, and qualified alternatives.
Aug 4, 2026
STM32H753VIT6 MCU Selection Guide: Memory, Package, Connectivity, and Security
Choose STM32H753VIT6 by evaluating memory architecture, LQFP-100 pin fit, connectivity, security, power, and sourcing tradeoffs.
Aug 4, 2026
Why Buy from FindMyChip
About Micro Commercial Components (MCC)
Micro Commercial Components (MCC) is a leading electronic component manufacturer. FindMyChip sources Micro Commercial Components (MCC) ICs directly from authorized China distributors, offering competitive pricing and reliable stock.
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 3000+ | $0.0140 | $42.00 |
| 23810+ | $0.0084 | $200.00 |
| 30865+ | $0.0081 | $250.01 |
| 38465+ | $0.0078 | $300.03 |
In Stock · 24h Response · Worldwide Shipping
Response within 24 hours · Worldwide shipping
“Their engineering team helped us find a pin-compatible alternative when our original MCU went EOL.”
You May Also Like
SPD15P10P G
Infineon
MOSFET (P-Channel)
AO3407A
Alpha & Omega Semiconductors
MOSFET (P-Channel)
SI5403DC-T1-GE3
Vishay
MOSFET (P-Channel)
BSL303SPEH6327XTSA1
Infineon
MOSFET (P-Channel)
SIA427DJ-T1-GE3
Vishay
MOSFET (P-Channel)
SiSS71DN-T1-GE3
Vishay
MOSFET (P-Channel)
SIS407ADN-T1-GE3
Vishay
MOSFET (P-Channel)
SI7157DP-T1-GE3
Vishay
MOSFET (P-Channel)
BSO201SPHXUMA1
Infineon
MOSFET (P-Channel)
AOD4189
Alpha & Omega Semiconductors
MOSFET (P-Channel)
AOD417
Alpha & Omega Semiconductors
MOSFET (P-Channel)
IPD50P04P4L11ATMA1
Infineon
MOSFET (P-Channel)
AO3401A
Alpha & Omega Semiconductors
MOSFET (P-Channel)
RQ5L015SPTL
ROHM Semiconductor
MOSFET (P-Channel)
DMP3130LQ-7
Diodes Inc.
MOSFET (P-Channel)
BUZ906P
Magnatec
MOSFET (P-Channel)
ZXM61P02FTA
Diodes Inc.
MOSFET (P-Channel)
ZVP3310FTA
Diodes Inc.
MOSFET (P-Channel)
SPP80P06PHXKSA1
Infineon
MOSFET (P-Channel)
BSP171P
Infineon
MOSFET (P-Channel)
SQ2319ADS-T1_GE3
Vishay
MOSFET (P-Channel)
SI7101DN-T1-GE3
Vishay
MOSFET (P-Channel)
IPB80P04P4L08ATMA1
Infineon
MOSFET (P-Channel)
TPCA8108(TE12L,Q)
Toshiba
MOSFET (P-Channel)