ADP360120W3 STMicroelectronics Integrated Circuit (Other) In Stock
STMicroelectronics ADP360120W3 is an automotive-grade ACEPACK DRIVE power module with sixpack topology, 1200 V rating, and 2.55 mOhm typical RDS(on) using 3rd-generation SiC MOSFET technology. Available from stock with worldwide shipping.
- Manufacturer
- STMicroelectronics
- Package
- Other
- Pin Count
- 38
- Lifecycle
- END OF LIFE
- Datasheet
- ADP360120W3 Datasheet PDF
- Category
- Integrated Circuit
- RoHS
- Compliant
- Lead Time
- 3–7 business days
- Shipping
- DHL Express · Worldwide
Key Features
- 1200 V sixpack SiC MOSFET power module with 2.55 mOhm typical on-resistance delivers ultra-low conduction losses for high-efficiency automotive traction inverters
- 3rd-generation SiC MOSFET technology provides faster switching, lower switching losses, and higher junction temperature capability versus silicon IGBT modules
- Automotive-grade ACEPACK DRIVE package with matte tin finish qualified for demanding EV powertrain and industrial motor drive environments
Applications
The ADP360120W3 is engineered for automotive traction inverters, on-board chargers, and DC-DC converters in electric and hybrid vehicles where 1200 V SiC power modules are required for high-efficiency energy conversion. Its sixpack topology integrates all six switching devices of a three-phase inverter bridge in a single module, reducing system inductance and simplifying gate driver design. The ultra-low 2.55 mOhm on-resistance minimizes conduction losses at high current, extending EV driving range per charge cycle.
Specifications
| YTEOL | 0 |
| JESD-609 Code | e3 |
| Terminal Finish | Matte Tin (Sn) - annealed |
| Package | Other |
Compliance & Regulatory
| RoHS Status | Compliant |
| Lead-Free | Yes (Pb-Free) |
| ECCN | EAR99 |
| Country of Origin | Mainland China |
Alternate & Equivalent Parts
No known alternates. Submit an RFQ and our team can suggest alternatives.
Frequently Asked Questions
What voltage class is the ADP360120W3 rated for and what DC bus voltages does that enable?
The ADP360120W3 is rated at 1200 V, making it suitable for 800 V DC bus electric vehicle traction systems and 690 V AC industrial motor drives, with adequate derating margin for switching transients and overvoltage spikes typical in automotive and industrial converter designs.
How does the 2.55 mOhm RDS(on) of the ADP360120W3 compare to silicon IGBT modules at similar current ratings?
The ADP360120W3's 2.55 mOhm typical SiC MOSFET on-resistance results in significantly lower conduction losses at high current than comparable silicon IGBT modules, where saturation voltage typically produces higher I²R losses, enabling smaller heatsinks and higher power density in automotive traction inverter designs.
What advantages does 3rd-generation SiC MOSFET technology in the ADP360120W3 offer over earlier SiC generations?
3rd-generation SiC MOSFET technology in the ADP360120W3 delivers improved gate oxide reliability, lower switching losses at 1200 V, higher short-circuit withstand capability, and reduced threshold voltage variation compared to first and second generation SiC devices, resulting in more robust and efficient operation in automotive traction and charging inverter applications.
Which electric vehicle powertrain designs benefit most from the sixpack topology of the ADP360120W3?
Three-phase traction motor inverters in battery electric vehicles benefit most from the ADP360120W3 sixpack topology, which integrates 6 SiC MOSFETs in a single 1200 V module covering all switch positions of the three-phase bridge, reducing parasitic bus inductance and simplifying gate driver board layout compared to discrete half-bridge module assemblies.
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About STMicroelectronics
STMicroelectronics is a global semiconductor leader serving customers across the spectrum of electronics applications. ST's products are found in a wide range of applications including automotive, industrial, personal electronics, and communications.
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