A2U12M12W2-F1C STMicroelectronics Integrated Circuit (Other) In Stock
A2U12M12W2-F1C is an ACEPACK 2 SiC power module featuring 3-level topology, 1200 V breakdown voltage, and 100 A continuous drain current with an ultra-low on-resistance of 17 mΩ. It integrates 4 SiC MOSFETs in an isolated package for high-efficiency inverter designs. Available from stock worldwide with fast shipping.
- Manufacturer
- STMicroelectronics
- Package
- Other
- Pin Count
- 42
- Lifecycle
- OBSOLETE
- Datasheet
- A2U12M12W2-F1C Datasheet PDF
- Category
- Integrated Circuit
- Temp Range
- -40.0°C to 150.0°C
- RoHS
- Compliant
- Lead Time
- 3–7 business days
- Shipping
- DHL Express · Worldwide
What are the key features of A2U12M12W2-F1C?
- 1200 V drain-source breakdown voltage for high-voltage industrial inverter applications
- 100 A continuous drain current with ultra-low 17 mΩ on-resistance for minimal conduction loss
- 3-level topology enabling reduced switching harmonics and improved output waveform quality
- Silicon Carbide (SiC) MOSFET technology for superior switching speed and thermal performance
- Isolated ACEPACK 2 module package simplifying thermal management and system integration
- 4 integrated elements reducing external component count and PCB complexity
What is A2U12M12W2-F1C used for?
The A2U12M12W2-F1C is designed for high-power industrial applications including 3-level solar inverters, motor drives, and UPS systems operating at 1200 V bus voltages. Its SiC MOSFET technology enables switching frequencies above conventional silicon limits, reducing passive component sizes and improving overall system efficiency. The ACEPACK 2 isolated module package facilitates straightforward thermal mounting to heat sinks in demanding power conversion environments.
What are the specifications of A2U12M12W2-F1C?
| YTEOL | 0 |
| Case Connection | ISOLATED |
| Configuration | COMPLEX |
| DS Breakdown Voltage-Min | 1200V |
| Drain Current-Max (ID) | 100A |
| Drain-source On Resistance-Max | 0.017Ω |
| FET Technology | METAL-OXIDE SEMICONDUCTOR |
| Feedback Cap-Max (Crss) | 60pF |
| JESD-30 Code | R-XUFM-X36 |
| Number of Elements | 4 |
| Operating Mode | ENHANCEMENT MODE |
| Package Body Material | UNSPECIFIED |
| Package Shape | RECTANGULAR |
| Package Style | FLANGE MOUNT |
| Polarity/Channel Type | N-CHANNEL |
| Power Dissipation-Max (Abs) | 326W |
| Pulsed Drain Current-Max (IDM) | 200A |
| Surface Mount | NO |
| Terminal Form | UNSPECIFIED |
| Terminal Position | UPPER |
| Transistor Application | SWITCHING |
| Transistor Element Material | SILICON CARBIDE |
| Package | Other |
Compliance & Regulatory
| RoHS Status | Compliant |
| Lead-Free | Yes (Pb-Free) |
| ECCN | EAR99 |
| Country of Origin | Philippines |
Where can I find the A2U12M12W2-F1C datasheet?
A2U12M12W2-F1C Datasheet DownloadOfficial datasheet from STMicroelectronics
What are equivalent replacements for A2U12M12W2-F1C?
Compatible alternatives and drop-in replacements for A2U12M12W2-F1C:
Frequently Asked Questions
What are the key electrical ratings of the A2U12M12W2-F1C SiC power module?
The A2U12M12W2-F1C is rated at 1200 V drain-source breakdown voltage and 100 A continuous drain current, with a maximum on-resistance of 17 mΩ and a feedback capacitance (Crss) of up to 60 pF, enabling efficient high-power switching in industrial inverter designs.
Which inverter topology is implemented in the A2U12M12W2-F1C, and why does it matter for harmonic performance?
The A2U12M12W2-F1C implements a 3-level inverter topology, which reduces output voltage harmonics and electromagnetic interference compared to a 2-level design, allowing smaller output filters and meeting stricter grid codes in solar and industrial motor-drive applications at voltages up to 1200 V.
How does the SiC MOSFET technology in the A2U12M12W2-F1C compare to silicon IGBTs for switching loss in a 1200 V design?
SiC MOSFETs switch significantly faster than silicon IGBTs at 1200 V, reducing switching losses at higher frequencies — often above 20 kHz — and allowing smaller passive components. The 17 mΩ on-resistance of the A2U12M12W2-F1C also provides lower conduction losses than comparable silicon IGBT modules of similar current rating.
What thermal interface does the ACEPACK 2 package on the A2U12M12W2-F1C provide for mounting in a power system?
The ACEPACK 2 package features an isolated baseplate with a case-to-isolated connection, enabling direct mounting to a heatsink without additional electrical isolation hardware. This simplifies thermal management for the 100 A, 1200 V module in compact power conversion enclosures, reducing assembly steps and improving reliability.
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About STMicroelectronics
STMicroelectronics is a global semiconductor leader serving customers across the spectrum of electronics applications. ST's products are found in a wide range of applications including automotive, industrial, personal electronics, and communications.
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