A1TB45W65M5-FC STMicroelectronics Integrated Circuit (Other) In Stock
STMicroelectronics A1TB45W65M5-FC is an ACEPACK 1 boost topology power module featuring 650 V MDmesh M5 MOSFETs with integrated SiC diode and NTC thermistor. It delivers 25 A drain current with 0.068 Ω on-resistance and 650 V breakdown voltage. Available from authorized distributors with worldwide shipping.
- Manufacturer
- STMicroelectronics
- Package
- Other
- Pin Count
- 22
- Lifecycle
- ACTIVE
- Datasheet
- A1TB45W65M5-FC Datasheet PDF
- Category
- Integrated Circuit
- Temp Range
- -40.0°C to 150.0°C
- RoHS
- Compliant
- Lead Time
- 3–7 business days
- Shipping
- DHL Express · Worldwide
Key Features
- Integrated 650 V MDmesh M5 MOSFET with ultra-low 0.068 Ω drain-source on-resistance for high-efficiency switching
- Built-in Silicon Carbide (SiC) diode enables fast recovery and reduced switching losses in boost PFC stages
- Integrated NTC thermistor provides real-time thermal monitoring for safe operation in demanding power conversion applications
- ACEPACK 1 package integrates 3 power elements in a compact isolated module, simplifying PCB layout and thermal management
Applications
The A1TB45W65M5-FC is designed for high-efficiency AC-DC power conversion stages such as boost power factor correction (PFC) circuits in industrial power supplies and EV on-board chargers. Its 650 V, 25 A rating makes it well-suited for telecom rectifiers, server power supplies, and solar inverter front ends operating from universal AC mains. The integrated SiC diode and NTC thermistor reduce external component count and simplify thermal protection design in high-density power modules.
Specifications
| YTEOL | 7 |
| Configuration | COMPLEX |
| DS Breakdown Voltage-Min | 650V |
| Drain Current-Max (ID) | 25A |
| Drain-source On Resistance-Max | 0.068Ω |
| FET Technology | METAL-OXIDE SEMICONDUCTOR |
| Feedback Cap-Max (Crss) | 11pF |
| JESD-30 Code | R-XUFM-X18 |
| JESD-609 Code | e4 |
| Number of Elements | 3 |
| Operating Mode | ENHANCEMENT MODE |
| Package Body Material | UNSPECIFIED |
| Package Shape | RECTANGULAR |
| Package Style | FLANGE MOUNT |
| Polarity/Channel Type | N-CHANNEL |
| Power Dissipation-Max (Abs) | 250W |
| Pulsed Drain Current-Max (IDM) | 100A |
| Surface Mount | YES |
| Terminal Finish | NICKEL PALLADIUM GOLD |
| Terminal Form | UNSPECIFIED |
| Terminal Position | UPPER |
| Transistor Application | SWITCHING |
| Transistor Element Material | SILICON CARBIDE |
| Package | Other |
Compliance & Regulatory
| RoHS Status | Compliant |
| Lead-Free | Yes (Pb-Free) |
| ECCN | EAR99 |
| Country of Origin | Philippines |
Alternate & Equivalent Parts
No known alternates. Submit an RFQ and our team can suggest alternatives.
Frequently Asked Questions
What is the maximum drain current and breakdown voltage of the A1TB45W65M5-FC?
The A1TB45W65M5-FC supports a maximum drain current (ID) of 25 A and a minimum drain-source breakdown voltage of 650 V, making it suitable for high-voltage boost PFC and AC-DC conversion stages operating from universal mains input up to 264 VAC.
How does the integrated SiC diode in the A1TB45W65M5-FC improve boost PFC efficiency?
The integrated Silicon Carbide (SiC) diode offers near-zero reverse recovery charge, significantly reducing switching losses at frequencies above 65 kHz compared to conventional silicon diodes. This allows the A1TB45W65M5-FC to achieve higher switching frequencies with lower thermal dissipation in boost PFC topologies.
Which industrial or EV charging applications are best suited to the A1TB45W65M5-FC ACEPACK 1 module?
The A1TB45W65M5-FC is ideal for EV on-board charger (OBC) front-end PFC stages operating at 650 V, industrial AC-DC power supplies rated above 1 kW, telecom rectifiers, and solar string inverters. Its 0.068 Ω on-resistance and ACEPACK 1 isolated package deliver efficient thermal management in compact high-power designs.
What package does the A1TB45W65M5-FC use and how does it simplify PCB integration?
The A1TB45W65M5-FC comes in the ACEPACK 1 power module package (JESD-30 code R-XUFM-X18), which integrates 3 power elements including MOSFET, SiC diode, and NTC thermistor in a single isolated housing. This integration reduces PCB footprint, external component count, and simplifies gate drive and thermal interface design for power densities above 2 kW.
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About STMicroelectronics
STMicroelectronics is a global semiconductor leader serving customers across the spectrum of electronics applications. ST's products are found in a wide range of applications including automotive, industrial, personal electronics, and communications.
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