Integrated Circuit
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- 1Verify electrical specifications (voltage, current, frequency) match your design requirements.
- 2Check package footprint and thermal characteristics against your PCB layout constraints.
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Integrated Circuit Guides & Articles
CSD87313DMS Synchronous Buck Power Stage Design Guide
Design a compact CSD87313DMS synchronous buck stage with practical guidance for loss, gate drive, PCB layout, EMI, thermal validation, and sourcing.
Aug 6, 2026
STEF05SGR eFuse Selection Guide for 5 V Overcurrent Protection
Choose STEF05SGR for 5 V overcurrent protection by checking current-limit margin, inrush, thermal loss, fault response, and sourcing.
Aug 6, 2026
C0402C103K3RACTU Selection Guide: Choosing a 10 nF 0402 MLCC
Select C0402C103K3RACTU by voltage margin, X7R behavior, tolerance, 0402 assembly risk, and qualified alternatives.
Aug 4, 2026
STM32H753VIT6 MCU Selection Guide: Memory, Package, Connectivity, and Security
Choose STM32H753VIT6 by evaluating memory architecture, LQFP-100 pin fit, connectivity, security, power, and sourcing tradeoffs.
Aug 4, 2026
All Integrated Circuit Components
Showing 10,701–10,750 of 77,666
The ZSSC3240 is a sensor signal conditioning IC (SSC) for highly accurate amplification, digitization, and sensor-specific correction of resistive sensor signals. The ZSSC3240 is suitable for bridge and half-bridge sensors, as well as external voltage-source element and single-element sensors (e.g., Pt100 and external temperature sensor diodes) powered by an on-chip current source. Digital compensation of the sensor offset, sensitivity, temperature drift, and non-linearity is accomplished via a 26-bit mat
The ZSSC3240 is a sensor signal conditioning IC (SSC) for highly accurate amplification, digitization, and sensor-specific correction of resistive sensor signals. The ZSSC3240 is suitable for bridge and half-bridge sensors, as well as external voltage-source element and single-element sensors (e.g., Pt100 and external temperature sensor diodes) powered by an on-chip current source. Digital compensation of the sensor offset, sensitivity, temperature drift, and non-linearity is accomplished via a 26-bit mat
The IPS2200 is an industrial qualified, inductive position sensor IC capable of providing the absolute rotor position as sine and cosine. This IC uses the physical principle of Eddy currents to detect the position of a simple metallic target moving above a set of coils, consisting of one transmitter and two receivers. The output interface can be configured as single-ended, for higher system cost effectiveness or differential to better reject common mode disturbers. The IPS2200 can be used for high-speed mot
The M1008204 series is a 8Mbit high performance non-volatile MRAM with speed up to 108MHz. The M1008204 offers superior reliability and greater than 20-year data retention (at 85°C). It does not require backup battery or capacitor(s) compared to non-volatile SRAM. The M1008204 supports Quad SPI, SDR and DDR interface. It operates at 1.8V typical from -40°C to +105°C (industrial plus version) and offered in an SOIC or DFN (WSON) package.
The ZSSC3240 is a sensor signal conditioning IC (SSC) for highly accurate amplification, digitization, and sensor-specific correction of resistive sensor signals. The ZSSC3240 is suitable for bridge and half-bridge sensors, as well as external voltage-source element and single-element sensors (e.g., Pt100 and external temperature sensor diodes) powered by an on-chip current source. Digital compensation of the sensor offset, sensitivity, temperature drift, and non-linearity is accomplished via a 26-bit mat
The M1016204 series is a 16Mbit high performance non-volatile MRAM with speed up to 108MHz. The M1016204 offers superior reliability and greater than 20-year data retention (at 85°C). It does not require backup battery or capacitor(s) compared to non-volatile SRAM. The M1016204 supports Quad SPI, SDR and DDR interface. It operates at 1.8V typical from -40°C to +105°C (industrial plus version) and offered in an SOIC or DFN (WSON) package.
The M3016204 series is a 16Mbit high performance non-volatile MRAM with speed up to 108MHz. The M3016204 offers superior reliability and greater than 20-year data retention (at 85°C). It does not require backup battery or capacitor(s) compared to non-volatile SRAM. The M3016204 supports Quad SPI, SDR and DDR interface. It operates at 3V typical from -40°C to +105°C (industrial plus version) and offered in an SOIC or DFN (WSON) package.
The M3008204 series is a 8Mbit high performance non-volatile MRAM with speed up to 108MHz. The M3008204 offers superior reliability and greater than 20-year data retention (at 85°C). It does not require backup battery or capacitor(s) compared to non-volatile SRAM. The M3008204 supports Quad SPI, SDR and DDR interface. It operates at 3V typical from -40°C to +105°C (industrial plus version) and offered in an SOIC or DFN (WSON) package.
The M1004204 series is a 4Mbit high-performance non-volatile MRAM with speed up to 108MHz. The M1004204 offers superior reliability and greater than 20-year data retention (at 85°C). It does not require backup battery or capacitor(s) compared to non-volatile SRAM. The M1004204 supports Quad SPI, SDR and DDR interface. It operates at 1.8V typical from -40°C to +105°C (industrial plus version) and offered in an SOIC or DFN (WSON) package.
The M3008204 series is a 8Mbit high performance non-volatile MRAM with speed up to 108MHz. The M3008204 offers superior reliability and greater than 20-year data retention (at 85°C). It does not require backup battery or capacitor(s) compared to non-volatile SRAM. The M3008204 supports Quad SPI, SDR and DDR interface. It operates at 3V typical from -40°C to +105°C (industrial plus version) and offered in an SOIC or DFN (WSON) package.
The M3004204 series is a 4Mbit high performance non-volatile MRAM with speed up to 108MHz. The M3004204 offers superior reliability and greater than 20-year data retention (at 85°C). It does not require backup battery or capacitor(s) compared to non-volatile SRAM. The M3004204 supports Quad SPI, SDR and DDR interface. It operates at 3V typical from -40°C to +105°C (industrial plus version) and offered in an SOIC or DFN (WSON) package.
The M1004204 series is a 4Mbit high-performance non-volatile MRAM with speed up to 108MHz. The M1004204 offers superior reliability and greater than 20-year data retention (at 85°C). It does not require backup battery or capacitor(s) compared to non-volatile SRAM. The M1004204 supports Quad SPI, SDR and DDR interface. It operates at 1.8V typical from -40°C to +105°C (industrial plus version) and offered in an SOIC or DFN (WSON) package.
The M1008204 series is a 8Mbit high performance non-volatile MRAM with speed up to 108MHz. The M1008204 offers superior reliability and greater than 20-year data retention (at 85°C). It does not require backup battery or capacitor(s) compared to non-volatile SRAM. The M1008204 supports Quad SPI, SDR and DDR interface. It operates at 1.8V typical from -40°C to +105°C (industrial plus version) and offered in an SOIC or DFN (WSON) package.
The M3004204 series is a 4Mbit high performance non-volatile MRAM with speed up to 108MHz. The M3004204 offers superior reliability and greater than 20-year data retention (at 85°C). It does not require backup battery or capacitor(s) compared to non-volatile SRAM. The M3004204 supports Quad SPI, SDR and DDR interface. It operates at 3V typical from -40°C to +105°C (industrial plus version) and offered in an SOIC or DFN (WSON) package.
The M1016204 series is a 16Mbit high performance non-volatile MRAM with speed up to 108MHz. The M1016204 offers superior reliability and greater than 20-year data retention (at 85°C). It does not require backup battery or capacitor(s) compared to non-volatile SRAM. The M1016204 supports Quad SPI, SDR and DDR interface. It operates at 1.8V typical from -40°C to +105°C (industrial plus version) and offered in an SOIC or DFN (WSON) package.
The M3004204 series is a 4Mbit high performance non-volatile MRAM with speed up to 108MHz. The M3004204 offers superior reliability and greater than 20-year data retention (at 85°C). It does not require backup battery or capacitor(s) compared to non-volatile SRAM. The M3004204 supports Quad SPI, SDR and DDR interface. It operates at 3V typical from -40°C to +105°C (industrial plus version) and offered in an SOIC or DFN (WSON) package.
The M1004204 series is a 4Mbit high-performance non-volatile MRAM with speed up to 108MHz. The M1004204 offers superior reliability and greater than 20-year data retention (at 85°C). It does not require backup battery or capacitor(s) compared to non-volatile SRAM. The M1004204 supports Quad SPI, SDR and DDR interface. It operates at 1.8V typical from -40°C to +105°C (industrial plus version) and offered in an SOIC or DFN (WSON) package.
The M3004204 series is a 4Mbit high performance non-volatile MRAM with speed up to 108MHz. The M3004204 offers superior reliability and greater than 20-year data retention (at 85°C). It does not require backup battery or capacitor(s) compared to non-volatile SRAM. The M3004204 supports Quad SPI, SDR and DDR interface. It operates at 3V typical from -40°C to +105°C (industrial plus version) and offered in an SOIC or DFN (WSON) package.
The M1016204 series is a 16Mbit high performance non-volatile MRAM with speed up to 108MHz. The M1016204 offers superior reliability and greater than 20-year data retention (at 85°C). It does not require backup battery or capacitor(s) compared to non-volatile SRAM. The M1016204 supports Quad SPI, SDR and DDR interface. It operates at 1.8V typical from -40°C to +105°C (industrial plus version) and offered in an SOIC or DFN (WSON) package.
The ZSSC3240 is a sensor signal conditioning IC (SSC) for highly accurate amplification, digitization, and sensor-specific correction of resistive sensor signals. The ZSSC3240 is suitable for bridge and half-bridge sensors, as well as external voltage-source element and single-element sensors (e.g., Pt100 and external temperature sensor diodes) powered by an on-chip current source. Digital compensation of the sensor offset, sensitivity, temperature drift, and non-linearity is accomplished via a 26-bit mat
The M3016204 series is a 16Mbit high performance non-volatile MRAM with speed up to 108MHz. The M3016204 offers superior reliability and greater than 20-year data retention (at 85°C). It does not require backup battery or capacitor(s) compared to non-volatile SRAM. The M3016204 supports Quad SPI, SDR and DDR interface. It operates at 3V typical from -40°C to +105°C (industrial plus version) and offered in an SOIC or DFN (WSON) package.
The M1008204 series is a 8Mbit high performance non-volatile MRAM with speed up to 108MHz. The M1008204 offers superior reliability and greater than 20-year data retention (at 85°C). It does not require backup battery or capacitor(s) compared to non-volatile SRAM. The M1008204 supports Quad SPI, SDR and DDR interface. It operates at 1.8V typical from -40°C to +105°C (industrial plus version) and offered in an SOIC or DFN (WSON) package.
The M1016204 series is a 16Mbit high performance non-volatile MRAM with speed up to 108MHz. The M1016204 offers superior reliability and greater than 20-year data retention (at 85°C). It does not require backup battery or capacitor(s) compared to non-volatile SRAM. The M1016204 supports Quad SPI, SDR and DDR interface. It operates at 1.8V typical from -40°C to +105°C (industrial plus version) and offered in an SOIC or DFN (WSON) package.
The M3008204 series is a 8Mbit high performance non-volatile MRAM with speed up to 108MHz. The M3008204 offers superior reliability and greater than 20-year data retention (at 85°C). It does not require backup battery or capacitor(s) compared to non-volatile SRAM. The M3008204 supports Quad SPI, SDR and DDR interface. It operates at 3V typical from -40°C to +105°C (industrial plus version) and offered in an SOIC or DFN (WSON) package.
The M3016204 series is a 16Mbit high performance non-volatile MRAM with speed up to 108MHz. The M3016204 offers superior reliability and greater than 20-year data retention (at 85°C). It does not require backup battery or capacitor(s) compared to non-volatile SRAM. The M3016204 supports Quad SPI, SDR and DDR interface. It operates at 3V typical from -40°C to +105°C (industrial plus version) and offered in an SOIC or DFN (WSON) package.
The M3016204 series is a 16Mbit high performance non-volatile MRAM with speed up to 108MHz. The M3016204 offers superior reliability and greater than 20-year data retention (at 85°C). It does not require backup battery or capacitor(s) compared to non-volatile SRAM. The M3016204 supports Quad SPI, SDR and DDR interface. It operates at 3V typical from -40°C to +105°C (industrial plus version) and offered in an SOIC or DFN (WSON) package.
The M3008204 series is a 8Mbit high performance non-volatile MRAM with speed up to 108MHz. The M3008204 offers superior reliability and greater than 20-year data retention (at 85°C). It does not require backup battery or capacitor(s) compared to non-volatile SRAM. The M3008204 supports Quad SPI, SDR and DDR interface. It operates at 3V typical from -40°C to +105°C (industrial plus version) and offered in an SOIC or DFN (WSON) package.
The M3008204 series is a 8Mbit high performance non-volatile MRAM with speed up to 108MHz. The M3008204 offers superior reliability and greater than 20-year data retention (at 85°C). It does not require backup battery or capacitor(s) compared to non-volatile SRAM. The M3008204 supports Quad SPI, SDR and DDR interface. It operates at 3V typical from -40°C to +105°C (industrial plus version) and offered in an SOIC or DFN (WSON) package.
The M3008204 series is a 8Mbit high performance non-volatile MRAM with speed up to 108MHz. The M3008204 offers superior reliability and greater than 20-year data retention (at 85°C). It does not require backup battery or capacitor(s) compared to non-volatile SRAM. The M3008204 supports Quad SPI, SDR and DDR interface. It operates at 3V typical from -40°C to +105°C (industrial plus version) and offered in an SOIC or DFN (WSON) package.
The M1008204 series is a 8Mbit high performance non-volatile MRAM with speed up to 108MHz. The M1008204 offers superior reliability and greater than 20-year data retention (at 85°C). It does not require backup battery or capacitor(s) compared to non-volatile SRAM. The M1008204 supports Quad SPI, SDR and DDR interface. It operates at 1.8V typical from -40°C to +105°C (industrial plus version) and offered in an SOIC or DFN (WSON) package.
The M3004204 series is a 4Mbit high performance non-volatile MRAM with speed up to 108MHz. The M3004204 offers superior reliability and greater than 20-year data retention (at 85°C). It does not require backup battery or capacitor(s) compared to non-volatile SRAM. The M3004204 supports Quad SPI, SDR and DDR interface. It operates at 3V typical from -40°C to +105°C (industrial plus version) and offered in an SOIC or DFN (WSON) package.
The M1008204 series is a 8Mbit high performance non-volatile MRAM with speed up to 108MHz. The M1008204 offers superior reliability and greater than 20-year data retention (at 85°C). It does not require backup battery or capacitor(s) compared to non-volatile SRAM. The M1008204 supports Quad SPI, SDR and DDR interface. It operates at 1.8V typical from -40°C to +105°C (industrial plus version) and offered in an SOIC or DFN (WSON) package.
The M3004204 series is a 4Mbit high performance non-volatile MRAM with speed up to 108MHz. The M3004204 offers superior reliability and greater than 20-year data retention (at 85°C). It does not require backup battery or capacitor(s) compared to non-volatile SRAM. The M3004204 supports Quad SPI, SDR and DDR interface. It operates at 3V typical from -40°C to +105°C (industrial plus version) and offered in an SOIC or DFN (WSON) package.
The M1004204 series is a 4Mbit high-performance non-volatile MRAM with speed up to 108MHz. The M1004204 offers superior reliability and greater than 20-year data retention (at 85°C). It does not require backup battery or capacitor(s) compared to non-volatile SRAM. The M1004204 supports Quad SPI, SDR and DDR interface. It operates at 1.8V typical from -40°C to +105°C (industrial plus version) and offered in an SOIC or DFN (WSON) package.
The M1016204 series is a 16Mbit high performance non-volatile MRAM with speed up to 108MHz. The M1016204 offers superior reliability and greater than 20-year data retention (at 85°C). It does not require backup battery or capacitor(s) compared to non-volatile SRAM. The M1016204 supports Quad SPI, SDR and DDR interface. It operates at 1.8V typical from -40°C to +105°C (industrial plus version) and offered in an SOIC or DFN (WSON) package.
The M1008204 series is a 8Mbit high performance non-volatile MRAM with speed up to 108MHz. The M1008204 offers superior reliability and greater than 20-year data retention (at 85°C). It does not require backup battery or capacitor(s) compared to non-volatile SRAM. The M1008204 supports Quad SPI, SDR and DDR interface. It operates at 1.8V typical from -40°C to +105°C (industrial plus version) and offered in an SOIC or DFN (WSON) package.
The M1004204 series is a 4Mbit high-performance non-volatile MRAM with speed up to 108MHz. The M1004204 offers superior reliability and greater than 20-year data retention (at 85°C). It does not require backup battery or capacitor(s) compared to non-volatile SRAM. The M1004204 supports Quad SPI, SDR and DDR interface. It operates at 1.8V typical from -40°C to +105°C (industrial plus version) and offered in an SOIC or DFN (WSON) package.
The M1004204 series is a 4Mbit high-performance non-volatile MRAM with speed up to 108MHz. The M1004204 offers superior reliability and greater than 20-year data retention (at 85°C). It does not require backup battery or capacitor(s) compared to non-volatile SRAM. The M1004204 supports Quad SPI, SDR and DDR interface. It operates at 1.8V typical from -40°C to +105°C (industrial plus version) and offered in an SOIC or DFN (WSON) package.
The M1004204 series is a 4Mbit high-performance non-volatile MRAM with speed up to 108MHz. The M1004204 offers superior reliability and greater than 20-year data retention (at 85°C). It does not require backup battery or capacitor(s) compared to non-volatile SRAM. The M1004204 supports Quad SPI, SDR and DDR interface. It operates at 1.8V typical from -40°C to +105°C (industrial plus version) and offered in an SOIC or DFN (WSON) package.
The M3004204 series is a 4Mbit high performance non-volatile MRAM with speed up to 108MHz. The M3004204 offers superior reliability and greater than 20-year data retention (at 85°C). It does not require backup battery or capacitor(s) compared to non-volatile SRAM. The M3004204 supports Quad SPI, SDR and DDR interface. It operates at 3V typical from -40°C to +105°C (industrial plus version) and offered in an SOIC or DFN (WSON) package.
The M3016204 series is a 16Mbit high performance non-volatile MRAM with speed up to 108MHz. The M3016204 offers superior reliability and greater than 20-year data retention (at 85°C). It does not require backup battery or capacitor(s) compared to non-volatile SRAM. The M3016204 supports Quad SPI, SDR and DDR interface. It operates at 3V typical from -40°C to +105°C (industrial plus version) and offered in an SOIC or DFN (WSON) package.
The M3016204 series is a 16Mbit high performance non-volatile MRAM with speed up to 108MHz. The M3016204 offers superior reliability and greater than 20-year data retention (at 85°C). It does not require backup battery or capacitor(s) compared to non-volatile SRAM. The M3016204 supports Quad SPI, SDR and DDR interface. It operates at 3V typical from -40°C to +105°C (industrial plus version) and offered in an SOIC or DFN (WSON) package.
The M1016204 series is a 16Mbit high performance non-volatile MRAM with speed up to 108MHz. The M1016204 offers superior reliability and greater than 20-year data retention (at 85°C). It does not require backup battery or capacitor(s) compared to non-volatile SRAM. The M1016204 supports Quad SPI, SDR and DDR interface. It operates at 1.8V typical from -40°C to +105°C (industrial plus version) and offered in an SOIC or DFN (WSON) package.
The M1016204 series is a 16Mbit high performance non-volatile MRAM with speed up to 108MHz. The M1016204 offers superior reliability and greater than 20-year data retention (at 85°C). It does not require backup battery or capacitor(s) compared to non-volatile SRAM. The M1016204 supports Quad SPI, SDR and DDR interface. It operates at 1.8V typical from -40°C to +105°C (industrial plus version) and offered in an SOIC or DFN (WSON) package.
The M3008204 series is a 8Mbit high performance non-volatile MRAM with speed up to 108MHz. The M3008204 offers superior reliability and greater than 20-year data retention (at 85°C). It does not require backup battery or capacitor(s) compared to non-volatile SRAM. The M3008204 supports Quad SPI, SDR and DDR interface. It operates at 3V typical from -40°C to +105°C (industrial plus version) and offered in an SOIC or DFN (WSON) package.
The M3008204 series is a 8Mbit high performance non-volatile MRAM with speed up to 108MHz. The M3008204 offers superior reliability and greater than 20-year data retention (at 85°C). It does not require backup battery or capacitor(s) compared to non-volatile SRAM. The M3008204 supports Quad SPI, SDR and DDR interface. It operates at 3V typical from -40°C to +105°C (industrial plus version) and offered in an SOIC or DFN (WSON) package.
The M3004204 series is a 4Mbit high performance non-volatile MRAM with speed up to 108MHz. The M3004204 offers superior reliability and greater than 20-year data retention (at 85°C). It does not require backup battery or capacitor(s) compared to non-volatile SRAM. The M3004204 supports Quad SPI, SDR and DDR interface. It operates at 3V typical from -40°C to +105°C (industrial plus version) and offered in an SOIC or DFN (WSON) package.
The M1008204 series is a 8Mbit high performance non-volatile MRAM with speed up to 108MHz. The M1008204 offers superior reliability and greater than 20-year data retention (at 85°C). It does not require backup battery or capacitor(s) compared to non-volatile SRAM. The M1008204 supports Quad SPI, SDR and DDR interface. It operates at 1.8V typical from -40°C to +105°C (industrial plus version) and offered in an SOIC or DFN (WSON) package.
The M1004204 series is a 4Mbit high-performance non-volatile MRAM with speed up to 108MHz. The M1004204 offers superior reliability and greater than 20-year data retention (at 85°C). It does not require backup battery or capacitor(s) compared to non-volatile SRAM. The M1004204 supports Quad SPI, SDR and DDR interface. It operates at 1.8V typical from -40°C to +105°C (industrial plus version) and offered in an SOIC or DFN (WSON) package.
The M1008204 series is a 8Mbit high performance non-volatile MRAM with speed up to 108MHz. The M1008204 offers superior reliability and greater than 20-year data retention (at 85°C). It does not require backup battery or capacitor(s) compared to non-volatile SRAM. The M1008204 supports Quad SPI, SDR and DDR interface. It operates at 1.8V typical from -40°C to +105°C (industrial plus version) and offered in an SOIC or DFN (WSON) package.
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