Integrated Circuit

Integrated Circuit components are essential building blocks in modern electronic systems. FindMyChip sources Integrated Circuit ICs from authorized China distributors with competitive pricing and reliable stock.

77,666 components

How to Choose Integrated Circuit Components

  • 1Verify electrical specifications (voltage, current, frequency) match your design requirements.
  • 2Check package footprint and thermal characteristics against your PCB layout constraints.
  • 3Confirm lifecycle status and long-term availability for production designs.

Popular Applications

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Smartphones, tablets, and smart home devices

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Factory automation, control systems, and monitoring

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In-vehicle electronics and advanced driver assistance

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Base stations, routers, and network equipment

All Integrated Circuit Components

Showing 10,65110,700 of 77,666

MAX1674EUA+Maxim Integrated

MAX1674EUA+, DC-DC Converter, 1.5A Adjustable, 2 → 5.5 V, Step Up, 0.5 MHz, 8-Pin μMAX

MAX1489ECSD+Maxim Integrated

MAX1489ECSD+, Line Receiver, EIA/TIA-562, EIA/TIA-232, RS-232, V.28, Quad 5 V 14-Pin SOIC

MAX1202ACAP+Maxim Integrated

I.C. MAX1202ACAP Maxim MAX1202ACAP+, 12 bit Serial ADC, 8-channel Differential Input, 20-Pin SSOP

MAX1606EUA+Maxim Integrated

MAX1606EUA+, LCD Display Driver, 2.4 V, 8-Pin μMAX

MAX1488ECPD+Maxim Integrated

RS232 line driver,MAX1488ECPD 4T DIP14 MAX1488ECPD+, Quad EIA/TIA-232, EIA/TIA/RS-562, ITU-V.28, RS-232, Line Transmitter, 14-Pin PDIP

MAX1110EAP+Maxim Integrated

MAX1110EAP+, 8 bit ADC Differential, SPI, 20-Pin SSOP

MAX1480BCPI+Maxim Integrated

Complete, Isolated RS-485/RS-422 Data Interface

MAX1488ECSD+Maxim Integrated

MAX1488ECSD+, Quad EIA/TIA-232, EIA/TIA/RS-562, ITU-V.28, RS-232, Line Transmitter, 14-Pin SOIC

MAX1620EEE+Maxim Integrated

MAX1620EEE+, LCD Display Driver, 16-Pin QSOP

MAX13442EASA+Maxim Integrated

8-Pin SO

MAX1490BCPG+Maxim Integrated

24 Wide Plastic DIP

MAX1487ECPA+Maxim Integrated

MAX1487ECPA+, Line Transceiver, RS-485, RS-422 2.5Mbit/s Differential, 5 V, 8-Pin PDIP

MAX1605EUT#TG16Maxim Integrated

MAX1605EUT#TG16 is a Maxim Integrated LED segment display for front-panel indicators, instruments,. It features 6-Pin for dependable production layouts. From quote-based stock with worldwide shipping.

MAX147BCAP+Maxim Integrated

MAX147BCAP+, 12 bit ADC Differential, Serial, 20-Pin SSOP

MAX1480CEPI+Maxim Integrated

Complete, Isolated RS-485/RS-422 Data Interface

MAX1480AEPI+Maxim Integrated

Complete, Isolated RS-485/RS-422 Data Interface

MAX132CNG+Maxim Integrated

ADC,+/-18 bit,Serial,SDIP24,MAX132CNG+ MAX132CNG+, 18 bit ADC Differential, Serial, 24-Pin PDIP

MAX118CAI+Maxim Integrated

I.C. MAX118CAI MAX118CAI+, 8 bit ADC, Parallel, 28-Pin SSOP

LTC2242IUP-12Linear Technology

12-Bit, 250Msps ADC

MN3101Panasonic

MN3101 is a Panasonic integrated circuit for industrial electronics. It offers 2 pins, supporting reliable assembly in compact electronic equipment. From quote-based pricing, request stock for worldwide shipping.

M10042040054X0PSAYRenesas Electronics

The M1004204 series is a 4Mbit high-performance non-volatile MRAM with speed up to 108MHz. The M1004204 offers superior reliability and greater than 20-year data retention (at 85°C). It does not require backup battery or capacitor(s) compared to non-volatile SRAM. The M1004204 supports Quad SPI, SDR and DDR interface. It operates at 1.8V typical from -40°C to +105°C (industrial plus version) and offered in an SOIC or DFN (WSON) package.

ZSSC3240CC6BRenesas Electronics

The ZSSC3240 is a sensor signal conditioning IC (SSC) for highly accurate amplification, digitization, and sensor-specific correction of resistive sensor signals. The ZSSC3240 is suitable for bridge and half-bridge sensors, as well as external voltage-source ele­ment and single-element sensors (e.g., Pt100 and external temper­ature sensor diodes) powered by an on-chip current source. Digital compensation of the sensor offset, sensitivity, temperature drift, and non-linearity is accomplished via a 26-bit mat

ZSSC3240CC1BRenesas Electronics

The ZSSC3240 is a sensor signal conditioning IC (SSC) for highly accurate amplification, digitization, and sensor-specific correction of resistive sensor signals. The ZSSC3240 is suitable for bridge and half-bridge sensors, as well as external voltage-source ele­ment and single-element sensors (e.g., Pt100 and external temper­ature sensor diodes) powered by an on-chip current source. Digital compensation of the sensor offset, sensitivity, temperature drift, and non-linearity is accomplished via a 26-bit mat

TLE4240-2MInfineon

TLE4240-2M is a Infineon integrated circuit for industrial electronics. It offers 5 pins, supporting reliable assembly in compact electronic equipment. From quote-based pricing, request stock for worldwide shipping.

M30162040108X0PSAYRenesas Electronics

The M3016204 series is a 16Mbit high performance non-volatile MRAM with speed up to 108MHz. The M3016204 offers superior reliability and greater than 20-year data retention (at 85°C). It does not require backup battery or capacitor(s) compared to non-volatile SRAM. The M3016204 supports Quad SPI, SDR and DDR interface. It operates at 3V typical from -40°C to +105°C (industrial plus version) and offered in an SOIC or DFN (WSON) package.

M30082040054X0ISAYRenesas Electronics

The M3008204 series is a 8Mbit high performance non-volatile MRAM with speed up to 108MHz. The M3008204 offers superior reliability and greater than 20-year data retention (at 85°C). It does not require backup battery or capacitor(s) compared to non-volatile SRAM. The M3008204 supports Quad SPI, SDR and DDR interface. It operates at 3V typical from -40°C to +105°C (industrial plus version) and offered in an SOIC or DFN (WSON) package.

M10042040054X0ISAYRenesas Electronics

The M1004204 series is a 4Mbit high-performance non-volatile MRAM with speed up to 108MHz. The M1004204 offers superior reliability and greater than 20-year data retention (at 85°C). It does not require backup battery or capacitor(s) compared to non-volatile SRAM. The M1004204 supports Quad SPI, SDR and DDR interface. It operates at 1.8V typical from -40°C to +105°C (industrial plus version) and offered in an SOIC or DFN (WSON) package.

M10082040108X0PWARRenesas Electronics

The M1008204 series is a 8Mbit high performance non-volatile MRAM with speed up to 108MHz. The M1008204 offers superior reliability and greater than 20-year data retention (at 85°C). It does not require backup battery or capacitor(s) compared to non-volatile SRAM. The M1008204 supports Quad SPI, SDR and DDR interface. It operates at 1.8V typical from -40°C to +105°C (industrial plus version) and offered in an SOIC or DFN (WSON) package.

M30162040054X0PWAYRenesas Electronics

The M3016204 series is a 16Mbit high performance non-volatile MRAM with speed up to 108MHz. The M3016204 offers superior reliability and greater than 20-year data retention (at 85°C). It does not require backup battery or capacitor(s) compared to non-volatile SRAM. The M3016204 supports Quad SPI, SDR and DDR interface. It operates at 3V typical from -40°C to +105°C (industrial plus version) and offered in an SOIC or DFN (WSON) package.

M10162040054X0IWAYRenesas Electronics

The M1016204 series is a 16Mbit high performance non-volatile MRAM with speed up to 108MHz. The M1016204 offers superior reliability and greater than 20-year data retention (at 85°C). It does not require backup battery or capacitor(s) compared to non-volatile SRAM. The M1016204 supports Quad SPI, SDR and DDR interface. It operates at 1.8V typical from -40°C to +105°C (industrial plus version) and offered in an SOIC or DFN (WSON) package.

M10162040054X0PWAYRenesas Electronics

The M1016204 series is a 16Mbit high performance non-volatile MRAM with speed up to 108MHz. The M1016204 offers superior reliability and greater than 20-year data retention (at 85°C). It does not require backup battery or capacitor(s) compared to non-volatile SRAM. The M1016204 supports Quad SPI, SDR and DDR interface. It operates at 1.8V typical from -40°C to +105°C (industrial plus version) and offered in an SOIC or DFN (WSON) package.

ZSSC3240CI6BRenesas Electronics

The ZSSC3240 is a sensor signal conditioning IC (SSC) for highly accurate amplification, digitization, and sensor-specific correction of resistive sensor signals. The ZSSC3240 is suitable for bridge and half-bridge sensors, as well as external voltage-source ele­ment and single-element sensors (e.g., Pt100 and external temper­ature sensor diodes) powered by an on-chip current source. Digital compensation of the sensor offset, sensitivity, temperature drift, and non-linearity is accomplished via a 26-bit mat

M10042040108X0PSAYRenesas Electronics

The M1004204 series is a 4Mbit high-performance non-volatile MRAM with speed up to 108MHz. The M1004204 offers superior reliability and greater than 20-year data retention (at 85°C). It does not require backup battery or capacitor(s) compared to non-volatile SRAM. The M1004204 supports Quad SPI, SDR and DDR interface. It operates at 1.8V typical from -40°C to +105°C (industrial plus version) and offered in an SOIC or DFN (WSON) package.

M30042040054X0ISAYRenesas Electronics

The M3004204 series is a 4Mbit high performance non-volatile MRAM with speed up to 108MHz. The M3004204 offers superior reliability and greater than 20-year data retention (at 85°C). It does not require backup battery or capacitor(s) compared to non-volatile SRAM. The M3004204 supports Quad SPI, SDR and DDR interface. It operates at 3V typical from -40°C to +105°C (industrial plus version) and offered in an SOIC or DFN (WSON) package.

M30162040054X0PWARRenesas Electronics

The M3016204 series is a 16Mbit high performance non-volatile MRAM with speed up to 108MHz. The M3016204 offers superior reliability and greater than 20-year data retention (at 85°C). It does not require backup battery or capacitor(s) compared to non-volatile SRAM. The M3016204 supports Quad SPI, SDR and DDR interface. It operates at 3V typical from -40°C to +105°C (industrial plus version) and offered in an SOIC or DFN (WSON) package.

M10162040108X0PWARRenesas Electronics

The M1016204 series is a 16Mbit high performance non-volatile MRAM with speed up to 108MHz. The M1016204 offers superior reliability and greater than 20-year data retention (at 85°C). It does not require backup battery or capacitor(s) compared to non-volatile SRAM. The M1016204 supports Quad SPI, SDR and DDR interface. It operates at 1.8V typical from -40°C to +105°C (industrial plus version) and offered in an SOIC or DFN (WSON) package.

M10082040108X0PSARRenesas Electronics

The M1008204 series is a 8Mbit high performance non-volatile MRAM with speed up to 108MHz. The M1008204 offers superior reliability and greater than 20-year data retention (at 85°C). It does not require backup battery or capacitor(s) compared to non-volatile SRAM. The M1008204 supports Quad SPI, SDR and DDR interface. It operates at 1.8V typical from -40°C to +105°C (industrial plus version) and offered in an SOIC or DFN (WSON) package.

M10162040054X0PSAYRenesas Electronics

The M1016204 series is a 16Mbit high performance non-volatile MRAM with speed up to 108MHz. The M1016204 offers superior reliability and greater than 20-year data retention (at 85°C). It does not require backup battery or capacitor(s) compared to non-volatile SRAM. The M1016204 supports Quad SPI, SDR and DDR interface. It operates at 1.8V typical from -40°C to +105°C (industrial plus version) and offered in an SOIC or DFN (WSON) package.

M30042040108X0PWARRenesas Electronics

The M3004204 series is a 4Mbit high performance non-volatile MRAM with speed up to 108MHz. The M3004204 offers superior reliability and greater than 20-year data retention (at 85°C). It does not require backup battery or capacitor(s) compared to non-volatile SRAM. The M3004204 supports Quad SPI, SDR and DDR interface. It operates at 3V typical from -40°C to +105°C (industrial plus version) and offered in an SOIC or DFN (WSON) package.

M10162040054X0ISAYRenesas Electronics

The M1016204 series is a 16Mbit high performance non-volatile MRAM with speed up to 108MHz. The M1016204 offers superior reliability and greater than 20-year data retention (at 85°C). It does not require backup battery or capacitor(s) compared to non-volatile SRAM. The M1016204 supports Quad SPI, SDR and DDR interface. It operates at 1.8V typical from -40°C to +105°C (industrial plus version) and offered in an SOIC or DFN (WSON) package.

M30162040054X0PSAYRenesas Electronics

The M3016204 series is a 16Mbit high performance non-volatile MRAM with speed up to 108MHz. The M3016204 offers superior reliability and greater than 20-year data retention (at 85°C). It does not require backup battery or capacitor(s) compared to non-volatile SRAM. The M3016204 supports Quad SPI, SDR and DDR interface. It operates at 3V typical from -40°C to +105°C (industrial plus version) and offered in an SOIC or DFN (WSON) package.

M10082040054X0PWAYRenesas Electronics

The M1008204 series is a 8Mbit high performance non-volatile MRAM with speed up to 108MHz. The M1008204 offers superior reliability and greater than 20-year data retention (at 85°C). It does not require backup battery or capacitor(s) compared to non-volatile SRAM. The M1008204 supports Quad SPI, SDR and DDR interface. It operates at 1.8V typical from -40°C to +105°C (industrial plus version) and offered in an SOIC or DFN (WSON) package.

M10042040108X0ISAYRenesas Electronics

The M1004204 series is a 4Mbit high-performance non-volatile MRAM with speed up to 108MHz. The M1004204 offers superior reliability and greater than 20-year data retention (at 85°C). It does not require backup battery or capacitor(s) compared to non-volatile SRAM. The M1004204 supports Quad SPI, SDR and DDR interface. It operates at 1.8V typical from -40°C to +105°C (industrial plus version) and offered in an SOIC or DFN (WSON) package.

M10082040054X0ISARRenesas Electronics

The M1008204 series is a 8Mbit high performance non-volatile MRAM with speed up to 108MHz. The M1008204 offers superior reliability and greater than 20-year data retention (at 85°C). It does not require backup battery or capacitor(s) compared to non-volatile SRAM. The M1008204 supports Quad SPI, SDR and DDR interface. It operates at 1.8V typical from -40°C to +105°C (industrial plus version) and offered in an SOIC or DFN (WSON) package.

M10042040108X0IWARRenesas Electronics

The M1004204 series is a 4Mbit high-performance non-volatile MRAM with speed up to 108MHz. The M1004204 offers superior reliability and greater than 20-year data retention (at 85°C). It does not require backup battery or capacitor(s) compared to non-volatile SRAM. The M1004204 supports Quad SPI, SDR and DDR interface. It operates at 1.8V typical from -40°C to +105°C (industrial plus version) and offered in an SOIC or DFN (WSON) package.

5CSXFC5C6U23C6NIntel

FPGA - Field Programmable Gate Array Cyclone V SX dual -core ARM Cortex-A9

M30082040054X0PWAYRenesas Electronics

The M3008204 series is a 8Mbit high performance non-volatile MRAM with speed up to 108MHz. The M3008204 offers superior reliability and greater than 20-year data retention (at 85°C). It does not require backup battery or capacitor(s) compared to non-volatile SRAM. The M3008204 supports Quad SPI, SDR and DDR interface. It operates at 3V typical from -40°C to +105°C (industrial plus version) and offered in an SOIC or DFN (WSON) package.

AW20054QNRAWINIC

AW20054QNR is a AWINIC integrated circuit for industrial electronics and embedded systems. It combines 33 pins, Quad Flat No-Lead, 9 MA for reliable board-level integration. Quote-based sourcing supports stock checks and worldwide shipping.

EP4CGX150DF27I7Intel

FBGA-672

ZSSC3240CI2BRenesas Electronics

The ZSSC3240 is a sensor signal conditioning IC (SSC) for highly accurate amplification, digitization, and sensor-specific correction of resistive sensor signals. The ZSSC3240 is suitable for bridge and half-bridge sensors, as well as external voltage-source ele­ment and single-element sensors (e.g., Pt100 and external temper­ature sensor diodes) powered by an on-chip current source. Digital compensation of the sensor offset, sensitivity, temperature drift, and non-linearity is accomplished via a 26-bit mat

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