Integrated Circuit

Integrated Circuit components are essential building blocks in modern electronic systems. FindMyChip sources Integrated Circuit ICs from authorized China distributors with competitive pricing and reliable stock.

77,666 components

How to Choose Integrated Circuit Components

  • 1Verify electrical specifications (voltage, current, frequency) match your design requirements.
  • 2Check package footprint and thermal characteristics against your PCB layout constraints.
  • 3Confirm lifecycle status and long-term availability for production designs.

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In-vehicle electronics and advanced driver assistance

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All Integrated Circuit Components

Showing 8,4518,500 of 77,666

NB4L52MNGON Semiconductor

Maximum Input Clock Frequency > 4 GHz Typical; 330 ps Typical Propagation Delay; 145 ps Typical Rise and Fall Times; Differential LVPECL Outputs, 750 mV PeaktoPeak, Typical; Operating Range: VCC = 2.375 V to 5.5 V with VEE = 0 V

NB3N551DR2GON Semiconductor

ON SEMICONDUCTOR - NB3N551DR2G - Fanout Buffer, 180 MHz, 3 V to 5.5 V, 4 Outputs, SOIC-8

NB3W1200LMNTXGON Semiconductor

12 Differential Clock Output Pairs @ 0.7 V; Low−Power NMOS Push−Pull Compatible Outputs for NB3W1200L; Optimized 100 MHz and 133 MHz Operating Frequencies to Meet The Next Generation PCIe Gen 2/Gen 3/ Gen 4 and Intel QPI & UPI Phase Jitter; DB1200ZL Compliant; 3.3 V ±5% Supply Voltage Operation; Fixed−Feedback for Lowest Input−To−Output Delay Variation; SMBus Programmable Configurations to Allow Multiple Buffers in a Single Control Network; PLL Bypass Configurable for PLL or Fanout Operation; Programmable P

NB4L16MMNGON Semiconductor

Maximum Input Clock Frequency > 3.5 GHz Typical; Maximum Input Data Frequency > 5 Gb/s Typical; 220 ps Typical Propagation Delay ; 65 ps Typical Rise and Fall Times ; CML Output with Operating Range: VCC = 2.375 V to 3.8 V with VEE = 0 V; CML Output Level (400 mV Peak-to-Peak Output), Differential Output Only; 50 Ω Internal Input and Output Termination Resistors; Functionally Compatible with Existing 2.5 V / 3.3 V LVEL, LVEP, EP, and SG Devices; Pb-Free Packages are Available

NB3N5573DTR2GON Semiconductor

HCSL Differential Output; Typical Period RMS jitter of 1.5 ps; Uses 25 MHz Fundamental Mode Parallel Resonant Crystal; Industrial Temperature Range -40C to +85C; Operating Range 3.3 V +/- 10%; PCIe Gen1, Gen2, Gen3, Gen4, QPI, UPI Jitter Compliant

NB3N502DGON Semiconductor
NB3N51034DTGON Semiconductor
NB3L553DGON Semiconductor

SOIC-8

NB3N51054DTGON Semiconductor

TSSOP-24

NB3N3002DTGON Semiconductor

Typical TIE RMS jitter of 2.5 ps; Uses 25 MHz Fundamental Mode Parallel Resonant Crystal; HCSL Differential Output; Operating Range 3.3 V 5%; Industrial Temperature Range -40C to +85C; PCIe Clock Generation Gen 1, Gen 2, Gen 3, Gen 4

NB3H83905CMNGON Semiconductor

6 LVTTL/LVCMOS Output Clock copies; Supply Operation VDD VDDO: 1.8 V0.2 V, 2.5 V 5% or 3.3 V 5% Core VDD 1.8 V equal or greater than VDD0: 1.8 V, 2.5 V, 3.3 V Nom. ; Crystal Oscillator Interface; Crystal Input Frequency Range: 3 MHz to 40 MHz; Clock Input Frequency Range: 3 MHz to 100 MHz; LVCMOS compatible Enable Inputs; 5 V Tolerant Enable Inputs; Tight Output to Output Skew: 80 ps Max; Synchronous Output Enable; Phase Noise Floor 160 dBc (at 1 MHz); Industrial Temp. Rang; 16 Pin TSSOP or SOIC Package; Pb

NB3N51032DTGON Semiconductor

TSSOP-16

NB3N108KMNR4GON Semiconductor

NB3N108KMNR4G, Clock Multiplexer HCSL HCSL, 32-Pin QFN

NB3N1200KMNGON Semiconductor

ON Semiconductor NB3N1200KMNG Differential Buffer, 64-Pin QFN

NB3N3020DTGON Semiconductor

Period Jitter RMS of 5.0 ps; 1 LV-PECL Differential Output and 1 LVMOS/LVTTL single ended output; Selectable Clock Multiplier; Operating Range - 3.3V +/- 10%; Industrial Temperature Range -40C to +85C

NB3N51034DTR2GON Semiconductor

Uses 25 MHz Fundamental Mode Parallel Resonant Crystal; Power Down Mode; 4 Low Skew HCSL or LVDS Outputs; OE Tri-States Outputs; Spread of -0.5%, -1.0%, -1.5% and No Spread; PCIe Gen 1, Gen 2, Gen 3 and Gen 4 Jitter Compliant; Low Phase Noise; Operating Range 3.3 V ±5%; Industrial Temperature Rangeˆ-40°C to +85°C; Functionally Compatible with IDT557-05, IDT5V41066, IDT5V41236; These are Pb-Free Devices

NB3N2302DGON Semiconductor

0.150 INCH, LEAD FREE, SOIC-8

NB3N1200KMNTXGON Semiconductor

Zero Delay PLL Clock Driver Single 100MHz to 133MHz 64-Pin QFN EP T/R

NB3N111KMNR4GON Semiconductor

Typical Input Clock Frequency 100, 133, 166, or 400 MHz; 220 ps Typical Rise and Fall Times; 800 ps Typical Propagation Delay; Delta tpd 100 ps Maximum Propagation Delay Variation per Diff Pair; 0.1 ps Typical RMS Phase Jitter; Operating Range: VCC = 3.0 V to 3.6 V with GND = 0 V; Differential HCSL Output Levels

NB3H83905CDTGON Semiconductor

TSSOP-16

NB3H83905CDGON Semiconductor

SOIC-16

NB2308AI5HDR2GON Semiconductor
NB100LVEP91DWGON Semiconductor

Typical Maximum Frequency >2 GHz; 430 ps Typical Propagation Delay; Operating Range: VCC = 2.375 V to 3.8 V; VEE = -2.375 V to -3.8 V; GNDI = 0 V; Q Output will default LOW with Inputs Open or at GND; Pb-Free Packages are Available

NB2305AI1HDTGON Semiconductor

ON Semiconductor NB2305AI1HDTG PLL Clock Buffer 8-Pin TSSOP

NB100ELT23LDTGON Semiconductor
NB3F8L3005CMNTBGON Semiconductor

Five LVCMOS / LVTTL Outputs up to 200 MHz; Differential Inputs Accept LVPECL, LVDS, HCSL, SSTL, or LVCMOS/LVTTL; Crystal Interface; Crystal Input Frequency Range: 10 MHz to 50 MHz; Output Skew: 10 ps Typical; Additive RMS Phase Jitter @ 156.25 MHz, (12 kHz – 20 MHz): 0.03 ps (Typical); Synchronous Output Enable; Output Defined Level When Input is Floating; Multiple Power Supply Modes Available (See Datasheet); Two Separate Output Bank Power Supplies; Industrial Temperature Range: −40°C to 85°C

N25S830HAT22ION Semiconductor

2.7 to 3.6 V power supply range ; Very low standby current - typical Isb as low as 1 uA; Very low operating current - as low as 3 mA; Simple memory control: single chip select (CS), serial input (SI) and serial output (SO); Flexible operating modes: word read and write, page mode (32 word page), and burst mode (full array); 32 K x 8 bit organization ; Self timed write cycles; Built-in write protection (CS high); HOLD pin for pausing communication

N25S830HAS22ION Semiconductor

2.7 to 3.6 V power supply range ; Very low standby current - typical Isb as low as 1 uA; Very low operating current - as low as 3 mA; Simple memory control: single chip select (CS), serial input (SI) and serial output (SO); Flexible operating modes: word read and write, page mode (32 word page), and burst mode (full array); 32 K x 8 bit organization ; Self timed write cycles; Built-in write protection (CS high); HOLD pin for pausing communication

N64S830HAS22ION Semiconductor

2.7 to 3.6 V power supply range; Very low standby current - as low as 1 uA; Very low operating current - as low as 3 mA; Flexible operating modes: word read and write, page mode (32 word page), and burst mode (full array); 8 K x 8 bit organization ; Simple memory control: single chip select (CS), serial input (SI) and serial output (SO); Self timed write cycles; Built-in write protection (CS high); HOLD pin for pausing communication; High reliability - unlimited write cycles; RoHS Compliant Packages - Green

MUR3060WTGON Semiconductor

Low Leakage Specified @ 150 C Case Temperature; 175 C Operating Junction Temperature; High Voltage Capability to 600 Volts; Finish: All External Surfaces Corrosion Resistant and Terminal Leads are Readily Solderable; Current Derating Specified @ Both Case and Ambient Temperatures; Ultrafast 35 and 60 Nanosecond Recovery Time; Weight: 4.3 grams (approximately); Low Forward Drop; Case: Epoxy, Molded; Epoxy Meets UL94, VO @ 1/8"; High Temperature Glass Passivated Junction Mechanical Characteristics:; Lead Temp

MUR3020WTGON Semiconductor

Low Leakage Specified @ 150 C Case Temperature; 175 C Operating Junction Temperature; High Voltage Capability to 600 Volts; Finish: All External Surfaces Corrosion Resistant and Terminal Leads are Readily Solderable; Current Derating Specified @ Both Case and Ambient Temperatures; Ultrafast 35 and 60 Nanosecond Recovery Time; Weight: 4.3 grams (approximately); Low Forward Drop; Case: Epoxy, Molded; Epoxy Meets UL94, VO @ 1/8"; High Temperature Glass Passivated Junction Mechanical Characteristics:; Lead Temp

MUR1640CTGON Semiconductor

175 C Operating Junction Temperature; High Temperature Glass Passivated Junction; High Voltage Capability to 600 Volts; Lead Temperature for Soldering Purposes: 260 C Max. for 10 Seconds; Current Derating @ Both Case and Ambient Temperatures Mechanical Characteristics:; Ultrafast 35 and 60 Nanosecond Recovery Times; Marking: U1610, U1615, U1620, U1640, U1660; Finish: All External Surfaces Corrosion Resistant and Terminal Leads are Readily Solderable; Weight: 1.9 grams (approximately); Case: Epoxy, Molded; L

MUR1620CTGON Semiconductor

175 C Operating Junction Temperature; High Temperature Glass Passivated Junction; Shipped 50 units per plastic tube; High Voltage Capability to 600 Volts; Lead Temperature for Soldering Purposes: 260 C Max. for 10 Seconds; Current Derating @ Both Case and Ambient Temperatures Mechanical Characteristics:; Ultrafast 35 and 60 Nanosecond Recovery Times; Marking: U1610, U1615, U1620, U1640, U1660; Finish: All External Surfaces Corrosion Resistant and Terminal Leads are Readily Solderable; Weight: 1.9 grams (app

MUN5211DW1T1GON Semiconductor

Simplifies Circuit Design; Reduces Board Space; Reduces Component Count; S and NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable; These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS Compliant

MMQA27VT1GON Semiconductor

Small Package Size for High Density Applications; FINISH:Corrosion Resistant Finish, Easily Solderable; Package Designed for Optimal Automated Board Assembly; Available in 8 mm Tape and Reel Use the Device Number to order the 7 inch/3,000 unit reel. Replace with "T3" in the Device Number to order the 13 inch/10,000 unit reel.; Low Leakage < 2.0 mA; SC-59 Package Allows Four Separate Unidirectional Configurations; CASE:Void Free, Transfer-Molded, Thermosetting Plastic Case; Peak Power - Min. 24 W @ 1.0 ms (U

MMDF1N05ER2GON Semiconductor

SOP-8

MJH6284GON Semiconductor

Extremely High RBSOA Capability; Inverters; 100 C Performance Specified for: Reverse-Biased SOA with Inductive Load Switching Times with Inductive Loads Saturation Voltages Leakage Currents; Relay Drivers 120 ns Inductive Crossover Time 100 C (T; Motor Controls 800 ns Inductive Storage Time 100 C (T; Extended FBSOA Rating Using Ultra-fast Rectifiers; Switching Regulators Collector-Emitter Voltage VCEV = 1000 Vdc; Solenoids 80 ns Inductive Fall Time 100 C (Typ); Fast Turn-Off Times; Deflection Circuits; Pb-F

MJD117GON Semiconductor

Lead Formed Version in 16 mm Tape and Reel ("T4" Suffix); High DC Current Gain hFE = 2500 (Typ) @ IC = 2.0 Adc; Monolithic Construction With Built-in Base-Emitter Shunt Resistors; Lead Formed for Surface Mount Applications in Plastic Sleeves (No Suffix); Straight Lead Version in Plastic Sleeves ("1" Suffix); Surface Mount Replacements for TIP110-TIP117 Series; Complementary Pairs Simplifies Designs; NJV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q

MCR69-2GON Semiconductor

SCR; TO-220AB; 6 V (TYP.); 300A ITSM; 16A ON-STATE (AVG. MAX.); 25A; 1.5; +125

MCR72-3GON Semiconductor

THYRISTOR, SCR 12A 50V TO220AB

MCR72-8GON Semiconductor

SCR; TO-220AB; 2V; 100A ITSM; 8A; 22; 30 UA (TYP.) GATE TRIGGER; +110; -40; 60

MDC3105LT1GON Semiconductor

SOT-23, 3 PIN

MC79M12BDTGON Semiconductor

LDO Regulator, 500 mA, 5 V, Negative 4%; TJ = -40°C to +125°C

MCR12DSMT4GON Semiconductor
MCR68-2GON Semiconductor

THYRISTOR, SCR 12A 50V TO-220

MC7915ACD2TGON Semiconductor

No External Components Required; Internal Thermal Overload Protection; Internal Short Circuit Current Limiting; Output Transistor Safe-Area Compensation; Available in 2% Voltage Tolerance (See Ordering Information); Pb-Free Package May be Available. The G-Suffix Denotes a Pb-Free Lead Finish.

MC79M05CDTRKGON Semiconductor

No External Components Required; Internal Thermal Overload Protection; Internal Short Circuit Current Limiting; Output Transistor Safe-Area Compensation; Also Available in Surface Mount DPAK (DT) Package DEVICE TYPE/NOMINAL OUTPUT VOLTAGE MC79M05 -5.0 V MC79M12 -12 V MC79M08 -8.0 V MC79M15 -15 V; Pb-Free Package May be Available. The G-Suffix Denotes a

MC79M12CDTGON Semiconductor

No External Components Required; Internal Thermal Overload Protection; Internal Short Circuit Current Limiting; Output Transistor Safe-Area Compensation; Also Available in Surface Mount DPAK (DT) Package DEVICE TYPE/NOMINAL OUTPUT VOLTAGE MC79M05 -5.0 V MC79M12 -12 V MC79M08 -8.0 V MC79M15 -15 V; Pb-Free Package May be Available. The G-Suffix Denotes a

MC79M05BDTGON Semiconductor

Fixed LDO Voltage Regulator, 7905, -35V to -10V, 1.1V Dropout, -5Vout, 500mAout, TO-220-3

MC79M15BDTGON Semiconductor

ON Semiconductor MC79M15BDTG is a fixed -15 V negative linear voltage regulator delivering up to 500 mA output current with a 1.1 V dropout voltage, rated from -40°C to +125°C. It accepts input voltages from 17.5 V to 30 V and is housed in a DPAK SMT package for compact board-level power regulation.

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