STMicroelectronics

SPC58 2B Line - 32 bit Power Architecture automotive MCU Single core 80Mhz, 1MByte Flash, ASIL-B

Low-power, 1 MHz, rail-to-rail, 5 V cost-effective op amp

Mainstream Arm Cortex-M4 MCU 170 MHz with 64 Kbytes of Flash memory, Math Accelerator, Medium Analog level integration

Automotive 3-Phase motor gate driver unit

Teseo V family automotive triple-band multi-constellation GNSS precise engine receiver

Teseo V family automotive triple-band multi-constellation GNSS precise engine receiver

Galvanically isolated 4 A single gate driver for SiC MOSFETs

• Gain bandwidth product 20 MHz, unity gain stable • Low input offset voltage: 50 µV typ., 200 µV max. • Low input bias current: 2 pA max. • Low noise: 7 nV/√Hz • Slew rate: 13 V/µs • Wide supply voltage range: 2.0 V to 5.5 V • Rail-to-rail input and output • 4 kV HBM ESD tolerance • Extended temperature range: -40 °C to +125 °C • Automotive grade versions available • Benefits: – Accuracy of measurement virtually unaffected by noise or input bias current – Signal conditioning for high frequenci

High bandwidth (50MHz) Low offset (200µV) Rail-to-rail 5V Op amp

High bandwidth (22MHz) Low offset (200 µV) low-rail 5V Op amp

High bandwidth (20MHz) Low offset (200 µV) rail-to-rail 5V Op amp

High bandwidth (22MHz) Low offset (200 µV) low-rail 5V Op amp

Use the download button to access the STM32WB55REV6TR schematic symbol, PCB footprint, and 3D model.

Arm® Cortex®-M4 32-bit MCU+FPU, 170 MHz / 213 DMIPS, 128 KB SRAM, rich analog, math acc, 184 ps 12 chan Hi-res timer

High bandwidth (20MHz) Low offset (200 µV) rail-to-rail 5V Op amp

High bandwidth (22MHz) Low offset (200 µV) low-rail 5V Op amp

Ultra-low-power Arm® Cortex®-M4 32-bit MCU+FPU, 100DMIPS, up to 256KB Flash, 64KB SRAM, analog, audio

Low-power, 2.5 MHz, RR IO, 36 V BiCMOS operational amplifier

32-bit Power Architecture® microcontroller for automotive SIL3/ASILD chassis and safety applications

UFBGA-24

SOP-8

Dual channel transceiver IC for SIO and IO-Link sensor applications

Arm® Cortex®-M4 32-bit MCU+FPU, up to 512 KB Flash, 170 MHz / 213DMIPS, 128 KB SRAM, rich analog, math accelerator

High voltage half-bridge gate driver for GaN transistors

Switching Voltage Regulators 38 V, 1.5 A synchronous step-down converter with low quiescent current

terface • Two-wire I²C serial interface supports 1 MHz protocol • Single supply voltage: 1.8 V to 5.5 V • Multiple byte programming (up to 256 bytes) • Configurable I²C target address

STMicroelectronics A1TB45W65M5-FC is an ACEPACK 1 boost topology power module featuring 650 V MDmesh M5 MOSFETs with integrated SiC diode and NTC thermistor. It delivers 25 A drain current with 0.068 Ω on-resistance and 650 V breakdown voltage. Available from authorized distributors with worldwide shipping.

400 mA nano-quiescent synchronous step-down converter with digital voltage selection, Power Good and load switch

N-channel 650 V, 33 mOhm typ., 75 A MDmesh DM6 Power MOSFET in a TO-247 long leads package

A2U12M12W2-F1C is an ACEPACK 2 SiC power module featuring 3-level topology, 1200 V breakdown voltage, and 100 A continuous drain current with an ultra-low on-resistance of 17 mΩ. It integrates 4 SiC MOSFETs in an isolated package for high-efficiency inverter designs. Available from stock worldwide with fast shipping.

Power Switch/Driver 1:1 N-Channel 2A 48-TQFP-EP (7x7)

Ultra-low-power Arm® Cortex®-M33 32-bit MCU+TrustZone®+FPU, 165 DMIPS, up to 512 KB Flash memory, 256 KB SRAM, SMPS

32-bit Power Architecture MCU for Automotive General Purpose Applications - Chorus family

Galvanically isolated 4 A dual gate driver

Digital controller for STC/HSTC topologies

32-bit Power Architecture microcontroller for automotive ASIL-D applications

400 mA nano-quiescent synchronous step-down converter with digital voltage selection, Power Good and load switch

Electronic switch for 12 V, 5 V and 3.3 V buses

Galvanically isolated 4 A dual gate driver

Digital controller for STC/HSTC topologies

Trench gate field-stop, 1200 V, 75 A, high-speed H series IGBT in a Max247 long leads package

Automotive galvanically isolated advanced single gate driver

Galvanically isolated 4 A dual gate driver

Galvanically isolated 4 A dual gate driver

Automotive-grade N-channel 650 V, 68 mOhm typ., 42 A MDmesh DM6 Power MOSFET in a TO-247 long leads package

Use the download button to access the STM32U585QII3TR schematic symbol, PCB footprint, and 3D model.

P-channel -30 V, 11 mΩ typ., -45 A STripFET™ H6 Power MOSFET in a PowerFLAT™ 5x6 package

Automotive galvanically isolated advanced single gate driver

Automotive-grade N-channel 650 V, 83 mOhm typ., 37 A MDmesh DM6 Power MOSFET in an HU3PAK package

Ultra-low-power Arm®Cortex®-M4 32-bit MCU+FPU, 150 DMIPS, up to 1-MB Flash memory, 320-KB SRAM, LCD-TFT, ext. SMPS