STMicroelectronics

E-L6561, Power Factor Controller, 18 V, 8-Pin, PDIP

STMicroelectronics 1 A Bipolar Stepper Drive, 7V

Peak pulse power: – 5000 W (10/1000 μs) – up to 60 kW (8/20 μs) • Stand-off voltage range from 12 V to 180 V • Unidirectional and bidirectional types • Operating Tj max: 175 °C • High power capability at Tj max.: up to 3700 W (10/1000 µs) • Lead finishing: matte tin plating

5000 W, 27 V TVS in DO-15

D44H11, NPN Bipolar Transistor, 20 A 80 V HFE:40 Power, 3-Pin TO-220

TVS Diode Uni-Directional BZW06-10 21.7V, 600W, DO-15 2-Pin

Peak pulse power: – 5000 W (10/1000 μs) – up to 60 kW (8/20 μs) • Stand-off voltage range from 12 V to 180 V • Unidirectional and bidirectional types • Operating Tj max: 175 °C • High power capability at Tj max.: up to 3700 W (10/1000 µs) • Lead finishing: matte tin plating

STMicroelectronics CRX14-MQP/1GE is an ISO 14443 Type-B contactless coupler chip with ASK RF transceiver in a 16-pin SO-16 package operating at 4.5 V to 5.5 V. It implements the full ISO 14443-2 and 14443-3 protocol layers for contactless smart card communication at 13.56 MHz. Suitable for ticketing terminals, access control readers, and point-of-sale contactless payment systems.

Peak pulse power: – 5000 W (10/1000 μs) – up to 60 kW (8/20 μs) • Stand-off voltage range from 12 V to 180 V • Unidirectional and bidirectional types • Operating Tj max: 175 °C • High power capability at Tj max.: up to 3700 W (10/1000 µs) • Lead finishing: matte tin plating

Peak pulse power: – 5000 W (10/1000 μs) – up to 60 kW (8/20 μs) • Stand-off voltage range from 12 V to 180 V • Unidirectional and bidirectional types • Operating Tj max: 175 °C • High power capability at Tj max.: up to 3700 W (10/1000 µs) • Lead finishing: matte tin plating

SOP-8

TVS Diode Bi-Directional BZW06-15B 32.5V, 600W, DO-15 2-Pin

Peak pulse power: – 5000 W (10/1000 μs) – up to 60 kW (8/20 μs) • Stand-off voltage range from 12 V to 180 V • Unidirectional and bidirectional types • Operating Tj max: 175 °C • High power capability at Tj max.: up to 3700 W (10/1000 µs) • Lead finishing: matte tin plating

High bandwidth (20 MHz for gain ≥ 4) micro-power (820 μA) rail-to-rail 5 V op amps

BZW04-33B is a bidirectional TVS diode from STMicroelectronics offering 400W peak pulse power dissipation with a 37.1V minimum breakdown voltage and 69.7V clamping voltage in a compact DO-15 axial package. From $0.15 in stock worldwide shipping.

TVS Diode Bi-Directional BZW04-13B 27.2V, 400W, DO-15 2-Pin

Peak pulse power: – 5000 W (10/1000 μs) – up to 60 kW (8/20 μs) • Stand-off voltage range from 12 V to 180 V • Unidirectional and bidirectional types • Operating Tj max: 175 °C • High power capability at Tj max.: up to 3700 W (10/1000 µs) • Lead finishing: matte tin plating

TVS Diode Bi-Directional BZW06-376B 776V, 600W, DO-15 2-Pin

TVS Diode Bi-Directional BZW06-28B 59V, 600W, DO-15 2-Pin

TVS Diode Bi-Directional BZW06-33B 69.7V, 600W, DO-15 2-Pin

TO-247, 3 PIN

TVS Diode Uni-Directional BZW06-13 27.2V, 600W, DO-15 2-Pin

TVS Diode Bi-Directional BZW06-23B 48.3V, 600W, DO-15 2-Pin

BUL49D, NPN Bipolar Transistor, 5 A 450 V HFE:4 Power, 3-Pin TO-220

BUV48A, NPN Bipolar Transistor, 15 A 1000 V HFE:8 Power NPN Transistor, 3-Pin TO-247

TVS Diode Uni-Directional BZW04-15 32.5V, 400W, DO-15 2-Pin

Low power offline switched-mode power supply primary switcher

400 W, 47.8 V TVS in DO-15

TRIAC BTB10-600BWRG, 600V, Gate Trigger 1.3V 50mA, TO-220AB 3-Pin

The BTB24-600CWRG is a 24 A, 600 V TRIAC from STMicroelectronics with a gate trigger voltage of 1.3 V and trigger current of 35 mA. It features a TO-220AB 3-pin through-hole package suitable for AC power switching. Available in stock with worldwide shipping.

TRIAC BTB24-800BWRG, 800V, Gate Trigger 1.3V 50mA 3-Pin

SCR Thyristor BTW69-1200RG, 1200V 32A 80mA, TOP Insulated 3-Pin

BUL216, NPN Bipolar Transistor, 4 A 800 V HFE:10 Power, 3-Pin TO-220

TO-126, 3 PIN

BUL58D, NPN Bipolar Transistor, 8 A 450 V HFE:5 Power, 3-Pin TO-220

The BUTW92 is a high-voltage NPN bipolar power transistor from STMicroelectronics rated at 250V collector-emitter voltage and up to 60A collector current with a minimum DC current gain (hFE) of 9. It is designed for high-power switching and amplification applications in a rugged through-hole TO-247 package. Available from stock with worldwide shipping.

SCR 800 V 50 A Standard Recovery Through Hole TOP3, 10 µA, 150 mA, -40°C ~ 125°C

BUL128D-B is an STMicroelectronics single NPN bipolar transistor with a built-in diode, housed in a 3-pin TO-220 package. It handles a 400V maximum collector-emitter voltage, 4A maximum collector current, and a minimum hFE of 12. In stock, worldwide shipping.

BTA26-600BW is a 25 A, 600 V isolated TRIAC in TOP3 package for AC power switching. Features 500 V/µs critical dV/dt rating, 50 mA maximum gate trigger current, and full isolation between the tab and heat sink. Competitively priced with worldwide in-stock availability and shipped globally.

ROHS COMPLIANT, PLASTIC PACKAGE-3

High voltage NPN power transistor for standard definition CRT display

The BU941ZPFI from STMicroelectronics is a Darlington NPN power transistor in a TO-3PF isolated package, rated for 15 A collector current and 350 V collector-emitter voltage with a minimum DC current gain of 300, built-in base-emitter diode and resistor for fast turn-off, suited for motor drive, switching regulator, and industrial power control applications.

TRIAC BTB24-600BWRG, 600V, Gate Trigger 1.3V 50mA, TO-220AB 3-Pin

ISOLATED TO-220AB, 3 PIN

TRIAC BTB16-600CWRG, 600V, Gate Trigger 1.3V 35mA, TO-220AB 3-Pin

TRIAC BTB16-800CWRG, 800V, Gate Trigger 1.3V 35mA, TO-220AB 3-Pin

BDW94C, Darlington Transistor, PNP 12 A 100 V HFE:100, 3-Pin, TO-220

TRIAC BTA10-600CWRG, 800V, Gate Trigger 1.3V 35mA, TO-220AB 3-Pin

TRIAC BTB08-600TWRG, 600V, Gate Trigger 1.3V 5mA, TO-220AB 3-Pin

TRIAC BTB08-600BWRG, 600V, Gate Trigger 1.3V 50mA, TO-220AB 3-Pin