ON Semiconductor

ON Semiconductor

ON Semiconductor (onsemi) provides intelligent power and sensing technologies for automotive, industrial, IoT, and cloud infrastructure applications.

4,313

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All ON Semiconductor Components

Showing 1,9011,950 of 4,313

NVR1P02T1GSOT23 (3-Pin)
NVR1P02T1GMOSFET (P-Channel)

Power Management in Portable and Battery−Powered Products; Ultra Low On−Resistance Provides Higher Efficiency and Extends Battery Life - RDS(on) = 180 mΩ @ VGS = -10 V - RDS(on) = 280 mΩ @ VGS = -4.5 V; Miniature SOT−23 Surface Mount Package Saves Board Space; Mounting Information for SOT−23 Package Provided; AEC-Q101 qualified and PPAP capable; RoHS Compliant

NVD5863NLT4GTO-XXX (Inc. DPAK)
NVD5863NLT4GTransistor

Power MOSFET 60V, 82A, 7.1 mOhm, Single N-Channel, DPAK, Logic Level.

NVD6824NLT4GTO-XXX (Inc. DPAK)
NVD6824NLT4GTransistor

Low RDS(on); AEC-Q101 qualified; Avalanche Energy Specified; RoHS Compliant; High Current Capability

NVF2955T1GSOT223 (3-Pin)
NVF2955T1GTransistor

TO-261, 4 PIN

NVD5865NLT4GTO-XXX (Inc. DPAK)
NVD5865NLT4GTransistor

Single N-Channel Power MOSFET 60V, 46A, 16mΩ

NVD5490NLT4GTO-XXX (Inc. DPAK)
NVD5490NLT4GTransistor

Low RDS(on) to Minimize Conduction Losses; High Current Capability; Avalanche Energy Specified; AEC−Q101 Qualified and PPAP Capable; RoHS Compliant

NVD5890NLT4GTO-XXX (Inc. DPAK)
NVD5890NLT4GTransistor

Power MOSFET 40V, 123A, 3.7 mOhm, Single N Channel, DPAK, Logic Level. T4G

NVD5414NT4GTO-XXX (Inc. DPAK)
NVD5414NT4GTransistor

Power MOSFET 60V, 24A, 37 mOhm, Single N−Channel DPAK.

NUP5120X6T1GSO Transistor Flat Lead
NUP5120X6T1GDiode

Protects up to 5 Lines in Single SOT-563 Package; ESD Rating of Class 3B (Exceeding 8kV) per Human Body Model and Class C (Exceeding 400V) per Machine Model.; Compliance with IEC61000-4-2 (ESD) 15kV (Air), 8kV (Contact); This is Pb-Free Device

NUP5150MUTBGSmall Outline No-lead
NUP5150MUTBGDiode

UDFN-6

NUP4304MR6T1GSOT23 (6-Pin)
NUP4304MR6T1GIntegrated Circuit

Low Capacitance (1.5 pF Maximum between I/O Lines); Single Package Integration Design; Provides ESD Protection for JEDEC Standards JESD22: Machine Model = Class C, Human Body Model = Class 3B; Protection for IEC61000-4-2 (Level 4): 8.0 kV (Contact) and 15 kV (Air); Ensures Data Line Speed and Integrity; Fewer Components and Less Board Space; Direct the Transient to either Positive Side or to Ground

NUP4301MR6T1GSOT23 (6-Pin)
NUP4301MR6T1GIntegrated Circuit

Low Capacitance (5 pf Maximum); Single Package Integration Design; Provides ESD Protection for JEDEC Standards JESD22 Machine Model = Class C Human Body Model = Class 3B; Protection for IEC61000-4-2 (Level 4) 8.0 kV (Contact) 15 kV (Air); Ensures Data Line Speed and Integrity; Fewer Components and Less Board Space; Direct the Transient to Either Positive Side or to the Ground; Pb-Free Package is Available; AEC-Q101 Qualified and PPAP Capable; SZ Prefix for Automotive and Other Applications Requiring Unique

NUP2201MR6T1GSOT23 (6-Pin)
NUP2201MR6T1GIntegrated Circuit

Low Capacitance (3pF Max between I/O lines); ESD Rating of Class 3B (exceeding 8kV) per Human Body Model and Class C (exceeding 400V) per Machine Model; Protection for the following IEC Standards: IEC 61000-4-2 (ESD) 15 kV (air) 8 kV (contact) IEC 61000-4-4 (EFT) 40 A (5/50 ns) IEC 61000-4-5 (lighting) 23 A (8/20 micro s); UL Flammability Rating of 94 V-0

NUP4201MR6T1GSOT23 (6-Pin)
NUP4201MR6T1GIntegrated Circuit

TSOP-6

NUP4302MR6T1GSOT23 (6-Pin)
NUP4302MR6T1GIntegrated Circuit

Very Low Forward Voltage Drop; Fast Switching; PN Junction Guard Ring for Transient and ESD Protection; ESD Rating of Class 3B (Exceeding 8 kV) per Human Body Model and Class C (Exceeding 400 V) per Machine Model; Compliance with: IEC6100-4-2 (ESD) 15 kV (air), 8 kV (contact); UL Flammability Rating of 94 V - O; Pb-Free Package is Available

NUP2202W1T2GSOT23 (6-Pin)
NUP2202W1T2GIntegrated Circuit

Low Capacitance (3 pF Maximum Between I/O Lines); ESD Rating of Class 3B (Exceeding 8 kV) per Human Body Model and Class C (Exceeding 400 V) per Machine Model; Protection for the Following IEC Standards:IEC 6100042 (ESD) 15 kV (air) 8 kV (contact)IEC 6100044 (EFT) 40 A (5/50 ns)IEC 6100045 (Lightning) 23 A (8/20 µs); UL Flammability Rating of 94 V-0; This is a Pb-Free Device

NUP4201DR2GSmall Outline Packages
NUP4201DR2GIntegrated Circuit

SO-8 Package; Peak Power - 500 Watts 8 x 20 µS; UL Flammability Rating of 94V-0; ESD Rating: IEC 61000-4-2 (ESD) 15 kV (air) 8 kV (contact) IEC 61000-4-4 (EFT) 40 A (5/50 ns) IEC 61000-4-5 (lightning) 23 (8/20 ?s); Pb-Free Package is Available

NUF2221W1T2GSOT23 (6-Pin)
NUF2221W1T2GIntegrated Circuit

Provides USB Line Termination, Filtering and ESD Protection; Single IC Offers Cost Savings; Bi-directional EMI Filtering Prevents Noise from Entering/Leaving the System; Compliance with IEC61000-4-2 (Level 4) 8 kV (Contact) 15 kV (Air); Flexible Pull-up Line Termination to Meet USB 1.1 Low Speed and High Speed Specification; ESD Ratings: Machine Model = C Human Body Model = 3B; Pb-Free Package is Available

NUP4202W1T2GSOT23 (6-Pin)
NUP4202W1T2GTVS Diode (Uni-directional)

Low Capacitance (3 pF Maximum Between I/O Lines); ESD Rating of Class 3B (Exceeding 8 kV) per Human Body model and Class C (Exceeding 400 V) per Machine Model; Protection for the Following IEC Standards: IEC61000-4-2 (ESD) 15 kV (air) 8 kV (contact), IEC61000-4-4 (EFT) 40 A (5/50 ns), IEC61000-4-5 (Lightning) 23 A (8/20 µs); UL Flammabiltiy Rating of 94 V-0; This is a Pb-Free Device

NUP412VP5T5GSO Transistor Flat Lead
NUP412VP5T5GIntegrated Circuit

Obsolete - ESD / Surge Protector

NUP4060AXV6T1GSO Transistor Flat Lead
NUP4060AXV6T1GIntegrated Circuit

Protects up to 4 Lines in a Single SOT-563 Package; ESD Rating: IEC61000-4-2: Level 4, Contact (8 kV), Air (15 kV); Human Body Model (HMB); Class 3B, Machine Model (MM); 400V; VCC Pin = 16 V Protection, D1, D2, and D3 Pins =6.8 V Protection; Low Capacitance (< 7 pF @ 3 V) for D1, D2, and D3; This is a Pb-Free Device

NUP2105LT1GSOT23 (3-Pin)
NUP2105LT1GIntegrated Circuit

Low Capacitance High-Speed CAN Data Rates; SZ Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable; SOT-23 pacakage allows two separate bi-directional configurations; 350 W Peak Power Dissipation per line (8x20 us waveform); Low reverse leakage current (< 100 nA); IEC-61000-4-2: Level 4 Compatible.; IEC-61000-4-4: 5/50 ns 50 A Max.; IEC-61000-4-5: 8.0 A (8x20 us); ISO 7637−2 Pulse 2a: Repetitive Load Switch Disconnect, 9.5 A;

NUF4211MNT1GSmall Outline No-lead
NUF4211MNT1GIntegrated Circuit

EMI Filtering and ESD Protection; Integration of 20 Discrete Components; Compliance with IEC61000-4-2 (level 4), > 8 kV (Contact); DFN Package, 2x2 mm; Moisture Sensitivity Level 1; ESD Ratings: Machine Model = C and Human Body Model = 3B; This is a Pb-Free Device; Reduces Parasitic Inductances, Which Offer a More Ideal Low Pass Filter Response

NUD4001DR2GSmall Outline Packages
NUD4001DR2GIntegrated Circuit

Supplies Constant LED Current for varying Input Voltages.; External Resistor Allows Designer to set Current - up to 500 mA.; AEC-Q101 Qualified and PPAP Capable; NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements

NUF2114MNT1GSmall Outline No-lead
NUF2114MNT1GFilter

Provides EMI Filtering and ESD Protection; Integration of 10 Discretes; Compliance with IEC61000-4-2 (Level 4), 30 kV (Contact); DFN8, 2x2 mm Package; Moisture Sensitivity Level 1; ESD Ratings: Machine Model=C and Human Body Model=3B; Matching Series Impedances for Speaker Applications; This is a Pb-Free Device

NUP2114UCMR6T1GSOT23 (6-Pin)
NUP2114UCMR6T1GIntegrated Circuit

Low Capacitance 0.8 pF; AECQ101 Qualified and PPAP Capable SNUP2114; Low Clamping Voltage; Stand Off Voltage: 5 V; Low Leakage; ESD Rating of Class 3B (Exceeding 8 kV) per Human Body model and Class C (Exceeding 400 V) per Machine Model; Protection for the Following IEC Standards: IEC 6100042 Level 4 ESD Protection; UL Flammability Rating of 94 V0; This is a PbFree Device; S prefix for automotive and other applications requiring unique site and control change requirements

NUP1301ML3T1GSOT23 (3-Pin)
NUP1301ML3T1GIntegrated Circuit

Low Capacitance; Single Package Integration Design; Provides ESD Protection for JEDEC Standards JESD22; Protection for IEC61000-4-2 (Level 4); Ensures Data Line Speed and Integrity; Fewer Components and Less Board Space; Direct the Transient to Either Positive Side or to the Ground; SZ Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable

NUF2230XV6T1GSO Transistor Flat Lead
NUF2230XV6T1GIntegrated Circuit

EMI Filtering and ESD Protection; Integration of 10 Discrete Components; Compliance with IEC61000-4-2 (Level 4), > 8.0 kV (Contact); SOT-563 Package; MoistureSensitivity Level 1; This is a Pb-Free Device

NUD4011DR2GSmall Outline Packages
NUD4011DR2GIntegrated Circuit

SO-8

NUD3160LT1GSOT23 (3-Pin)
NUD3160LT1GTransistor

Provides Robust Interface between DC Relay Coils and Sensitive Logic; Capable of Driving Relay Coils Rated up to 150 mA at 12 V, 24 V or 48 V; Replaces 3 or 4 Discrete Components for Lower Cost ; Internal Zener Eliminates Need for Free-Wheeling Diode ; Meets Load Dump and other Automotive Specs

NUP1105LT1GSOT23 (3-Pin)
NUP1105LT1GIntegrated Circuit

Low Reverse Leakage Current (< 100 nA); IEC Compatibility: -IEC 61000-4-2 (ESD): Level 4 -IEC 61000-4-4 (EFT): 40 A - 5/50 ns -IEC 61000-4-5 (Lighting): 8.0 A (8/20 s); SZ Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable; SOT-23 Package Allows One Separate Bidirectional Configuration; 350 W Peak Power Dissipation per Line (8 x 20 usec Waveform); ISO 7637−3, Repetitive Electrical Fast Transient (EFT) TBD EMI Surge Pulses;

NTSJ30100CTGTransistor Outline, Vertical
NTSJ30100CTGTransistor

Obsolete - Schottky Rectifier, Low Forward Voltage, Dual, 30 A, 120 V

NTR2101PT1GSOT23 (3-Pin)
NTR2101PT1GMOSFET (P-Channel)

LEAD FREE, CASE 318-08, TO-236, 3 PIN

NTP2955GTransistor Outline, Vertical
NTP2955GTransistor

Power MOSFET

NTZD3154NT1GSO Transistor Flat Lead
NTZD3154NT1GTransistor

Use the download button to access the NTZD3154NT1G schematic symbol, PCB footprint, and 3D model.

NUD3124DMT1GSOT23 (6-Pin)
NUD3124DMT1GIntegrated Circuit

Provides Robust Interface between D.C. Relay Coils and Sensitive Logic; Capable of Driving Relay Coils Rated up to 150 mA at 12 Volts; Replaces 3 or 4 Discrete Components for Lower Cost; Internal Zener Eliminates Need for Free-Wheeling Diode; Meets Load Dump and other Automotive Specs

NUD3105LT1GSOT23 (3-Pin)
NUD3105LT1GIntegrated Circuit

Use the download button to access the NUD3105LT1G schematic symbol, PCB footprint, and 3D model.

NUD3112LT1GSOT23 (3-Pin)
NUD3112LT1GTransistor

SOT-23, 3 PIN

NUD3160DMT1GSOT23 (6-Pin)
NUD3160DMT1GIntegrated Circuit

Provides Robust Interface between DC Relay Coils and Sensitive Logic; Capable of Driving Relay Coils Rated up to 150 mA at 12 V, 24 V or 48 V; Replaces 3 or 4 Discrete Components for Lower Cost ; Internal Zener Eliminates Need for Free-Wheeling Diode ; Meets Load Dump and other Automotive Specs

NUD3105DMT1GSOT23 (6-Pin)
NUD3105DMT1GIntegrated Circuit

SOT-74, 6 PIN

NTZD3155CT1GSO Transistor Flat Lead
NTZD3155CT1GIntegrated Circuit

SOT-563, 6 PIN

NTST40120CTGTransistor Outline, Vertical
NTST40120CTGIntegrated Circuit

Schottky Power Rectifier, Dual, 40 A, 120 V TO-220

NTSV20100CTGTransistor Outline, Vertical
NTSV20100CTGIntegrated Circuit

Fine Lithography Trench-based Schottky Technology for Very Low Forward Voltage and Low Leakage; Fast Switching with Exceptional Temperature Stability; Low Power Loss and Lower Operating Temperature; Higher Efficiency for Achieving Regulatory Compliance; Low Thermal Resistance; High Surge Capability; Pb-Free and Halide-Free Packages are Available

NTSV30100CTGTransistor Outline, Vertical
NTSV30100CTGSchottky Diode

LEAD FREE, PLASTIC, CASE 221A-09, 3 PIN

NTTFS5116PLTAGOther
NTTFS5116PLTAGMOSFET (P-Channel)

WDFN8, 8 PIN

NTSB30120CTGOther
NTSB30120CTGDiode

NTSB30120CTG is a 0A 120V diode by ON Semiconductor. Key specs: 0A, 120V, 3 pins. From quote-based pricing, in stock with worldwide shipping for production sourcing.

NTTFS5820NLTAGOther
NTTFS5820NLTAGMOSFET (N-Channel)

WDFN-8

NTST40H120CTGTransistor Outline, Vertical
NTST40H120CTGDiode

Trench Schottky Rectifier, Low Vf and low leakage 40A, 120V in TO-220 package

NTST30U100CTGTransistor Outline, Vertical
NTST30U100CTGSchottky Diode

Fine Lithography Trenchbased Schottky Technology for Very Low Forward Voltage and Low Leakage; Fast Switching with Exceptional Temperature Stability; Low Power Loss and Lower Operating Temperature; Higher Efficiency for Achieving Regulatory Complianc; Low Thermal Resistance; High Surge Capability; PbFree and HalideFree Packages are Available

NTSJ30U100CTGTransistor Outline, Vertical
NTSJ30U100CTGSchottky Diode

Use the download button to access the NTSJ30U100CTG schematic symbol, PCB footprint, and 3D model.

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