Infineon

Infineon is a leading electronic component manufacturer. FindMyChip sources Infineon ICs directly from authorized China distributors, offering competitive pricing and reliable stock.

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All Infineon Components

Showing 151186 of 186

BAT 15-03W E6327Diode

Schottky Diodes & Rectifiers Silicon Schottky Diodes 4V 110mA

IRF7343TRPBFMOSFET (N-Channel)

Infineon IRF7343TRPBF is a dual MOSFET in an SO-8 package featuring one N-channel and one P-channel device, each rated at 55 V and 4.7 A with 50 mΩ maximum Rds(on). Avalanche-rated with ultra-low resistance for high-efficiency switching in compact designs. Available from authorized distributors with worldwide shipping.

SPA07N60C3MOSFET (N-Channel)

The SPA07N60C3 is an N-channel CoolMOS power MOSFET from Infineon rated at 600 V breakdown voltage and 7.3 A drain current with 0.6 Ω on-resistance. It is avalanche rated with an isolated TO package, available in stock with worldwide shipping.

BCR400WH6327XTSA1Transistor BJT NPN

ROHS COMPLIANT, SOT-343, 4 PIN

IRF7309TRPBFMOSFET (N-Channel)

IRF7309TRPBF is a dual N-channel MOSFET from Infineon in an 8-pin SOIC-8 package, rated at 30 V drain-source breakdown voltage and 4 A drain current per element with an ultra-low 50 mΩ on-resistance. Two independent MOSFETs with built-in body diodes share one compact SMT package. Available on tape-and-reel with worldwide shipping.

IRS2005STRPBFIntegrated Circuit

Infineon IRS2005STRPBF is a half-bridge gate driver IC in an 8-pin SOIC package supporting high-side and low-side IGBT and MOSFET gate drive with 0.6 A output peak current. Features Schmitt trigger inputs for noise immunity and bootstrap operation up to 600 V. Available from authorized distributors with worldwide shipping.

IRFZ48VPBFMOSFET (N-Channel)

Infineon IRFZ48VPBF is an N-channel power MOSFET rated at 60 V and 72 A in a TO-220 vertical package with matte tin terminal finish. Features low on-resistance suitable for motor control and power switching applications. Available from authorized distributors with worldwide shipping.

IKCM15H60GAXKMA2Integrated Circuit

The IKCM15H60GAXKMA2 is an Infineon CIPOS MINI intelligent power module for AC motor control, integrating IGBT switches and gate drivers rated at 600 V and 15 A in a compact 24-pin microelectronic assembly package. It simplifies three-phase inverter design with built-in protection. Available in stock with worldwide shipping.

BFR380FH6327XTSA1Transistor BJT NPN

Use the download button to access the BFR380FH6327XTSA1 schematic symbol, PCB footprint, and 3D model.

IRFR3708TRPBFMOSFET (N-Channel)

The IRFR3708TRPBF is an N-Channel HEXFET Power MOSFET with 30 V drain-source voltage, 30 A continuous drain current, and 12.5 mΩ on-resistance. It features fast switching and low gate charge of 24 nC, making it ideal for DC-DC converters, motor drives, and load switching applications.

TLE4266GSV10HTMA1Integrated Circuit

TLE4266GSV10HTMA1 is a fixed-output automotive-grade low-dropout (LDO) linear voltage regulator from Infineon, delivering 100 mA continuous output at 10 V with up to 45 V input voltage tolerance. Housed in a compact SOT-223 4-pin package, it features 250 mV typical dropout and -40°C to +125°C operating range. Ideal for automotive ECU power supplies, sensor modules, and voltage post-regulation in harsh environments.

IPP180N10N3GXKSA1MOSFET (N-Channel)

The IPP180N10N3GXKSA1 is an Infineon N-channel MOSFET in TO-220 package rated at 100 V and 43 A with ultra-low 18 mΩ on-resistance, suited for power conversion and motor drive circuits. It features a built-in body diode and 50 mJ avalanche energy rating for robust switching reliability. Available from stock with worldwide shipping.

IRF7811AVPBFIntegrated Circuit

Infineon IRF7811AVPBF is a 30 V N-channel MOSFET in an SO-8 package with 10.8 A drain current and 14 mΩ on-resistance, optimized for synchronous DC-DC converters and load switches. Available in stock worldwide with competitive pricing.

SPD04P10PL GMOSFET (P-Channel)

Infineon SPD04P10PL G is a P-channel power MOSFET rated at -100 V drain-to-source voltage and 4.2 A continuous drain current in a DPAK-2 surface mount package. Features low on-state resistance and fast switching for efficient load switching and motor drive applications. Available from stock with worldwide shipping for power management designs.

TLE94112ELXUMA1Integrated Circuit

Infineon TLE94112ELXUMA1 is a multi-half-bridge DC motor controller IC capable of driving up to 6 independent DC motors or 1 stepper motor, with a maximum output current of 2 A per half-bridge, housed in a 24-pin SSOP package. It includes SPI-controlled PWM outputs, over-temperature, over-current, and under-voltage protection for automotive and industrial motor drives. Available in stock worldwide with fast shipping.

BTS4141NHUMA1MOSFET (N-Channel)

INFINEON - BTS4141NHUMA1 - Smart Power Switch, SIPMOS Technology, High Side, 1 Output, 1.1A, SOT-223-4

XMC1301T016F0032ABXUMA1Integrated Circuit

Infineon XMC1301T016F0032ABXUMA1 is a 32-bit ARM Cortex-M0 microcontroller running at up to 32 MHz with 32 KB flash, 16 KB RAM, and 34 I/O lines in a compact TSSOP-16 package for cost-sensitive industrial applications.

IRLR8256PBFMOSFET (N-Channel)

Infineon IRLR8256PBF is a 25V N-channel power MOSFET with 81A continuous drain current and ultra-low 5.7mΩ on-resistance in a TO-252AA (DPAK) package. It includes an integrated body diode and 86mJ avalanche energy rating for robust unclamped inductive switching. Suited for synchronous buck converters, motor drives, and high-current load switching in automotive and industrial power systems.

SPD18P06PGBTMA1MOSFET (P-Channel)

The SPD18P06PGBTMA1 is a P-channel power MOSFET from Infineon rated at -60 V drain-source breakdown voltage and -18.6 A continuous drain current, featuring a low 0.13 Ω on-resistance and 150 mJ avalanche energy rating in a DPAK-2 surface mount package. It includes a built-in body diode and avalanche protection for robust load-switching and motor-drive designs. Available worldwide for high-volume production.

IPB048N15N5ATMA1MOSFET (N-Channel)

Infineon IPB048N15N5ATMA1 is a 150 V, 120 A N-channel power MOSFET with an ultra-low 4.8 mΩ Rds(on), built-in body diode, and 230 mJ avalanche energy rating in a TO-263 (D2PAK) package, optimized for high-efficiency motor drives and DC-DC power conversion.

IDP30E60XKSA1Diode

Infineon IDP30E60XKSA1 is a 600 V, 30 A silicon fast recovery rectifier diode in a TO-220 2-pin package. It features a cathode case connection and maximum forward voltage of 2 V, optimized for power conversion. Available with lead-free termination and worldwide shipping.

ICE3BS03LJGIntegrated Circuit

The ICE3BS03LJG is a current-mode PWM switching controller from Infineon, operating from 10.5 V to 26 V input with a 73.7 kHz switching frequency and an 8-pin DSO package. It integrates built-in soft-start and protection features, making it a robust solution for offline flyback and forward converter power supply designs.

ICE3AR0680JZIntegrated Circuit

The ICE3AR0680JZ is a current-mode PWM switching controller IC from Infineon designed for offline flyback power supply applications. It operates from an 11.2 V to 25 V supply and integrates active burst-mode control for high efficiency at light loads in a compact 7-pin DIP package. Suitable for AC/DC adapters, chargers, and standby power supplies targeting energy efficiency standards.

TLI4906KUndefined or Miscellaneous

TLI4906K is an Infineon high-precision Hall effect sensor switch in a 3-pin SC-59 (SOT-23) package operating from 2.7 V to 18 V supply. It features open-drain output with 20 mA sink capability, making it ideal for contactless position sensing in automotive and industrial applications.

BFR 181W H6327Transistor BJT NPN

Infineon BFR 181W H6327 is an NPN RF bipolar transistor rated at 20 mA collector current and 12 V collector-emitter voltage in a compact 3-pin SOT-323 package optimized for low-noise, high-frequency amplifier applications. High transition frequency enables gain stages in VHF and UHF bands. Available worldwide from authorized distributors with competitive pricing.

BSP322PH6327XTSA1Integrated Circuit

Infineon BSP322PH6327XTSA1 P-channel MOSFET Transistor, 1 A, -100 V, 4-Pin SOT-223

BAT1503WE6327Diode

Infineon BAT1503WE6327, SMT Schottky Diode, 4V 110mA, 2-Pin SOD-323

CDM10VXTSA1Integrated Circuit

SOT-23, 6 PIN

BSP316P H6327MOSFET (P-Channel)

MOSFET P-Ch -100V -680mA SOT-223-3

TLE42764DV50ATMA1Integrated Circuit

Infineon TLE42764DV50ATMA1 is a integrated circuit for embedded electronics, industrial controls, instrumentation, and production BOM sourcing. It offers 4 pins, 4 PIN in TO-252. From quote-based sourcing, buyers can request stock checks and worldwide shipping support.

IRS2334SPBFIntegrated Circuit

Infineon IRS2334SPBF is a integrated circuit for embedded electronics, industrial controls, instrumentation, and production BOM sourcing. It offers 20 pins, 600 V, 10 V in Small Outline Packages. From quote-based sourcing, buyers can request stock checks and worldwide shipping support.

IPD90P03P4L04ATMA1MOSFET (P-Channel)

Infineon IPD90P03P4L04ATMA1 is a MOSFET (P-Channel) for embedded electronics, industrial controls, instrumentation, and production BOM sourcing. It offers 3 pins, 30 V, 90A in 3-pin package. From quote-based sourcing, buyers can request stock checks and worldwide shipping support.

XMC1100T038X0064ABXUMA1Integrated Circuit

Infineon XMC1100T038X0064ABXUMA1 is a integrated circuit for embedded electronics, industrial controls, instrumentation, and production BOM sourcing. It offers 38 pins, -40°C to 105°C in Small Outline Packages. From quote-based sourcing, buyers can request stock checks and worldwide shipping support.

BAS 70-04W H6327Schottky Diode

Schottky Diodes & Rectifiers AF SCHOTTKY DIODE

BTS5210GSwitch

Smart High-Side Power Switch PROFET SO14 Infineon BTS5210G, Dual Intelligent Power Switch, High Side, 3.9A, -10 → 16V, 14-Pin, SOIC

BTS4141NIntegrated Circuit

GREEN, PLASTIC, SOT-223, 4 PIN

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