Search Electronic Components

0.150 INCH, HALOGEN FREE AND ROHS COMPLIANT, MS-012, SOIC-8

Obsolete - Precision Analog Voltage Reference

Precision monitoring of +5.0 V (±5%, ±10%, ±20%), +3.3 V (±5%, ±10%), +3.0 V (±10%) and +2.5 V (±5%) power supplies; Offered in two output configurations: - CAT811: Active LOW reset - CAT812: Active HIGH reset; Manual reset input; Direct replacements for the MAX811 and MAX812 in applications operating over the industrial temperature range; Reset valid down to VCC = 1.0 V; 6 µA power supply current; Power supply transient immunity; Industrial temperature range: -40°C to +85°C; Compact 4-pin SOT143 package

WDFN-6

Obsolete - 150 mA LDO Regulator

SOT-23, 5 PIN

Low Dropout Driver 50 mV at 20 mA; No Switching Noise; Shutdown Current less than 1 µA; LED Current set by External Resistor; Dimming via 1-wire EZDim Interface; Thermal Shutdown Protection; 2 LED Current Sinks with Tight Matching; 32 Dimming Levels

TQFN-16

20 MHz (5 V) SPI Compatible; 1.8 V to 5.5 V Supply Voltage Range; SPI Modes (0,0) & (1,1); 64-byte Page Write Buffer; Self-timed Write Cycle; Hardware and Software Protection; Block Write Protection - Protect 1/4, 1/2 or Entire EEPROM Array; Industrial Temperature Range; 100 Year Data Retention; 1,000,000 Program/Erase Cycles; Low Power CMOS Technology; SOIC, TSSOP 8-lead and UDFN 8-pad Packages; This Device is Pb-Free, Halogen Free/BFR Free, and RoHS Compliant

10 MHz SPI compatible; 1.8 V to 5.5 V supply voltage range; SPI modes (0,0) & (1,1); 32-Byte page write buffer; Self-timed write cycle; Hardware and software protection; 1,000,000 program/erase cycles; 100 year data retention; Industrial temperature range; Block write protection - Protect 1/4, 1/2 or all of EEPROM array; Low power CMOS technology; RoHS-compliant SOIC, TSSOP 8-lead and UDFN 8-pad packages

20 MHz (5 V) SPI Compatible; 1.8 V to 5.5 V Supply Voltage Range; SPI Modes (0,0) & (1,1); 64-byte Page Write Buffer; Additional Identification Page with Permanent Write Protection (New Product); Self-timed Write Cycle; Hardware and Software Protection; Block Write Protection - Protect 1/4, 1/2 or Entire EEPROM Array; Low Power CMOS Technology; 1,000,000 Program/Erase Cycles; 100 Year Data Retention; Industrial Temperature Range; 8-lead SOIC, TSSOP and 8-pad UDFN Packages; This Device is Pb-Free, Halogen Fr

ON Semiconductor CAT25256XI EEPROM Memory, 256kbit, 40ns, 1.8 → 5.5 V 8-Pin SOIC

32-byte page write buffer; SPI modes (0,0 & 1,1); 1.8 V to 5.5 V supply voltage range; 10 MHz SPI compatible; Self-timed write cycle; Hardware and software protection; Block write protection - Protect 1/4, 1/2 or all of EEPROM array; Low power CMOS technology; RoHS-compliant 8 lead SOIC, TSSOP and 8-pad UDFN packages; Industrial temperature range; 100 year data retention; 1,000,000 program/erase cycles

20 MHz SPI Compatible; 1.8 V to 5.5 V Operation; Hardware and Software Protection; Low Power CMOS Technology; Industrial Temperature Range; Self-Timed Write Cycle; 64-Byte Page Write Buffer; SPI Modes (0,0 & 1,1); Block Write Protection - Protect 1/4, 1/2 or all of EEPROM Array; 1,000,000 Program/Erase Cycles; 100 Year Data Retention; 8-lead SOIC, TSSOP and 8-pad TDFN, UDFN Packages; This Device is Pb-Free, Halogen Free/BFR Free, and RoHS Compliant; Additional Identification Page with Permanent Write Protec

32-byte page write buffer; SPI modes (0,0 & 1,1); 1.8 V to 5.5 V supply voltage range; 10 MHz SPI compatible; Self-timed write cycle; Hardware and software protection; Block write protection - Protect 1/4, 1/2 or all of EEPROM array; Low power CMOS technology; RoHS-compliant 8 lead SOIC and TSSOP, UDFN 8-pad packages; Industrial temperature range; 100 year data retention; 1,000,000 program/erase cycles

ON Semiconductor CAT25020LI-G EEPROM Memory, 2kbit, 2μs, 1.8 → 5.5 V 8-Pin PDIP

20 MHz (5 V) SPI Compatible; 1.8 V to 5.5 V Supply Voltage Range; SPI Modes (0,0 and 1,1); 16-byte Page Write Buffer; Self-timed Write Cycle; Hardware and Software Protection; Block Write Protection - Protect 1/4, 1/2 or Entire EEPROM Array; Low Power CMOS Tchnology; 8-lead SOIC and TSSOP and 8-pad UDFN packages; Industrial Temperature Range; 100 year Data Retention; 1,000,000 Program/Erase Cycles; These Devices are Pb-Free, Halogen Free/BFR Free and RoHS Compliant

ON Semiconductor CAT24C256XI-T2 EEPROM Memory, 256kbit, 1000ns, 1.8 → 5.5 V 8-Pin SOIC

DIP-8

250 mW Rating on FR-4 or FR-5 Board; Zener Breakdown Voltage Range - 2.4 V to 75 V; Package Designed for Optimal Automated Board Assembly; Small Package Size for High Density Applications; ESD Rating of Class 3 (>16 KV) per Human Body Model; Mechanical Characteristics:; CASE: Void-free, transfer-molded, thermosetting plastic case; FINISH: Corrosion resistant finish, easily solderable; MAXIMUM CASE TEMPERATURE FOR SOLDERING PURPOSES: 260°C for 10 Seconds; POLARITY: Cathode indicated by polarity band; FLAMMAB