Search Electronic Components

High performance trench technology for extremely lowRDS(ON) .; Low gate charge (2.1nC typical).; Compact industry standard SC70-6 surface mountpackage.; 2 A, 30 A V; RDS(on) = 0.12 Ω @ VGS = 10 V; RDS(on) = 0.16 Ω @ VGS = 4.5 V

SC-70, 6 PIN

Max rDS(on) = 180mΩ at VGS = -4.5V, ID = -1.5A; VF < 500mV @ 1A; VF < 580mV @ 2A; Schottky and MOSFET incorporated into single power surface mount S0-8 package; Electrically independent Schottky and MOSFET pinout for design flexibility; RoHS Compliant; Max rDS(on) = 115mΩ at VGS = -10V, ID = -3.0A

N-Channel 100 V 15.7A (Tc) 50W (Tc) Surface Mount TO-252AA 1465 pF @ 25 V -55°C ~ 175°C

ON Semiconductor FDD8444_F085 is a MOSFET for electronic assemblies. Key specs include 3 pins and production PCB layout. Request pricing, stock checks, and worldwide shipping support from FindMyChip.

SuperSOT™ -6 package: small footprint (72% smaller thanstandard SO-8; low profile (1mm thick). ; RoHS Compliant ; Max rDS(on) = 36mΩ at VGS = 4.5V, ID = 5.3A ; Max rDS(on) = 27mΩ at VGS = 10V, ID = 6.1A

−3.6 A, −30 V. RDS(ON) = 75 m @ VGS = −10 V RDS(ON) = 125 m @ VGS = −4.5 V Low Gate Charge (6.2 nC typical) High Performance Trench Technology for Extremely Low RDS(ON) These Device is Pb−Free and Halogen Free

SuperSOT™ -6 package:small footprint (72% smaller than standard SO¨C8) low profile (1mm thick). ; Manufactured using Green packaging materials. ; Max rDS(ON) = 43mΩ at VGS = -4.5V, ID = -4.5A ; Halide free ; Low gate charge (8nC typical). ; Max rDS(ON) = 68mΩ at VGS = -2.5V, ID = -3.8A ; RoHS Compliant ; High performance trench technology for extremely low rDS(on)

Control MOSFET (Q1) includes Zener protection for ESD ruggedness (>6KV Human Body Model) ; VDROP=0.2V @ VIN=5V, IL=2.8A. R(ON) = 0.07Ω VDROP=0.2V @ VIN=2.5V, IL=1.9A. R(ON) = 0.105Ω ; High performance PowerTrench™ technology for extremely for superior thermal and electrical capabilities

SuperSOT™-6 package design using copper lead frame for superior thermal and electrical capabilities ; VDROP=0.20V @ VIN=12V, IL=1.5A. R(ON) = 0.125Ω VDROP=0.20V @ VIN=5V, IL=1A. R(ON) = 0.20Ω

High performance trench technology for extremelylow RDS(ON) ; SuperSOT™ -6 package: small footprint 72%smaller than standard SO-8; low profile (1mm thick) ; -2.2 A, -20 V ; Low gate charge ; Fast switching speed ; RDS(on) = 125m Ω @ VGS = -4.5 V ; RDS(on) = 190m Ω @ VGS = -2.5 V

DPAK-3/2

ON Semiconductor FCB20N60F_F085 is a MOSFET for electronic assemblies. Key specs include 3 pins and production PCB layout. Request pricing, stock checks, and worldwide shipping support from FindMyChip.

Low Start-up and Operating Current: 120 µA, 3.2 mA; Internal Clamping Zener Diode; High Accuracy Oscillator; Under-Voltage Lockout with 1.8 V of Hysteresis; Internal Active ZVS Control; Floating Channel Designed for Bootstrap Operation to +600 V; Soft-Start Functionality; Adjustable Run Frequency and Preheat Time; Internal Protection Function (Latch Mode)

Under-Voltage Lockout for VBS ; 25V Shunt Regulator on VDD and VBS ; 3.3V and 5V Input Logic Compatible ; 8-Lead Small Outline Package (SOP); 4A/4A Sourcing/Sinking Current Driving Capability ; Floating Channel Designed for Bootstrap Operation to +600V ; Output In-phase with Input Signal ; Common-Mode dv/dt Noise Canceling Circuit

Common-Mode dv/dt Noise-Canceling Circuit; Floating Channel for Bootstrap Operation to +600V; Under-Voltage Lockout for VDD and VBS; 8-Lead Small Outline Package (SOP); 3.3V and 5V Input Logic Compatible; 250mA/500mA Sourcing/Sinking Current Driving Capability; Output In Phase with Input Signal

24 µA Typical Quiescent Current; Best-in-Class Efficiency; 2.3 V to 5.5 V Input Voltage Range; 0.8 V to 2 V Fixed Output Voltage; 6-Bump WLCSP, 0.4 mm Pitch; Thermal Shutdown and Overload Protection; Low Ripple Light-Load PFM Mode; 6 MHz Fixed-Frequency Operation; Optional Output Discharge; Input Under-Voltage Lockout (UVLO); 600 mA or 1 A Output Current Capability; Forced PWM and External Clock Synchronization; Internal Soft-Start; Best-in-Class Load Transient Response

Input Voltage Range: 2.5 V to 4.80 V; Total Application Board Solution Size: < 11 mm2; Three External Components: 2016 0.47 µH Inductor, 0603 Case Size Input / Output Capacitors; 9-Bump, 1.215 mm x 1.215 mm, 0.4 mm Pitch WLCSP; IOUT ≥ 1.5 A at VOUT 5.0 V, VIN ≥ 3.0 V; Up to 94% Efficient; Short-Circuit Protection ; Output Voltages Range: 3 V to 5 V; Soft-Start with True Load Disconnect; Internal Synchronous Rectification; IOUT ≥ 1 A at VOUT 5.0 V, VIN ≥ 2.5 V

SOIC-8

Typical Propagation Delay Under 20ns Matched within 1ns to the Other Channel ; Rated from –40°C to +125°C Ambient; Industry-Standard Pinouts ; 4.3A Sink / 2.8A Source at VOUT = 6V ; Dual Non-Inverting + Enable (FAN3224) ; Internal Resistors Turn Driver Off If No Inputs ; 8-Lead 3x3mm MLP or 8-Lead SOIC Package ; Three Versions of Dual Independent Drivers: ; MillerDrive™ Technology ; 12ns / 9ns Typical Rise/Fall Times with 2.2nF Load ; Double Current Capability by Paralleling Channels ; 4.5 to 18V Operating