ZXTP19100CFFTA Diodes Inc. Transistor BJT PNP (SO Transistor Flat Lead) In Stock

The ZXTP19100CFFTA is a Diodes Inc. PNP bipolar junction transistor with 100 V collector-emitter voltage, 2 A continuous collector current, and a minimum hFE of 20, housed in a compact flat-lead SOT-23F 3-pin SMD package.

ACTIVETransistor BJT PNPVerified Jun 2026
Package / Visual Reference
ZXTP19100CFFTASO Transistor Flat Lead
Quick Facts
Manufacturer
Diodes Inc.
Package
SO Transistor Flat Lead
Pin Count
3
Lifecycle
ACTIVE
Category
Transistor BJT PNP
Temp Range
-55.0°C to 150.0°C
RoHS
Compliant
Lead Time
3–7 business days
Shipping
DHL Express · Worldwide

Key Features

  • 100 V VCEO rating enables use in high-side switch and motor drive circuits operating from 48 V to 80 V bus supplies
  • 2 A continuous collector current supports driving relays, solenoids, and small DC motors directly from logic-level control signals
  • SOT-23F flat-lead package occupies under 5 mm² board area, ideal for space-constrained power management circuits
  • 23.5 pF collector-base capacitance ensures adequate switching speed for low-frequency PWM and audio amplifier applications

Applications

The ZXTP19100CFFTA is suitable for high-side PNP switching stages in motor drive circuits, relay drivers, and LED dimmer circuits powered from 12 V to 48 V rails, where its 100 V and 2 A ratings provide generous safety margin. It is commonly used in power supply control loops, load switch circuits, and constant-current LED driver topologies that require a compact SMD PNP transistor with moderate hFE. The flat-lead SOT-23F package minimizes parasitic inductance, making it compatible with low-EMI design practices in industrial power modules and automotive auxiliary circuits.

Specifications

Pbfree CodeYes
Factory Lead Time12Weeks
YTEOL4
Collector Current-Max (IC)2A
Collector-Base Capacitance-Max23.5pF
Collector-Emitter Voltage-Max100V
ConfigurationSINGLE
DC Current Gain-Min (hFE)20
JESD-30 CodeR-PDSO-F3
JESD-609 Codee3
Number of Elements1
Package Body MaterialPLASTIC/EPOXY
Package ShapeRECTANGULAR
Package StyleSMALL OUTLINE
Peak Reflow Temperature (Cel)260
Polarity/Channel TypePNP
Power Dissipation-Max (Abs)1.5W
Qualification StatusNot Qualified
Reference StandardMIL-STD-202
Surface MountYES
Terminal FinishMATTE TIN
Terminal FormFLAT
Terminal PositionDUAL
Time@Peak Reflow Temperature-Max (s)30
Transistor ApplicationSWITCHING
Transistor Element MaterialSILICON
Transition Frequency-Nom (fT)142MHz
VCEsat-Max0.275V
PackageSO Transistor Flat Lead

Compliance & Regulatory

RoHS StatusCompliant
Lead-FreeYes (Pb-Free)
Moisture Sensitivity LevelMSL 1
ECCNEAR99
Country of OriginMainland China

Datasheet

ZXTP19100CFFTA Datasheet Download

Official datasheet from Diodes Inc.

Alternate & Equivalent Parts

No known alternates. Submit an RFQ and our team can suggest alternatives.

Frequently Asked Questions

What are the maximum VCEO and IC ratings of ZXTP19100CFFTA for high-voltage switching?

ZXTP19100CFFTA is rated for a maximum collector-emitter voltage (VCEO) of 100 V and a maximum continuous collector current (IC) of 2 A, making it suitable for PNP high-side switches on 12 V, 24 V, and 48 V bus rails with at least a 2× voltage derating margin from the 100 V ceiling.

How does ZXTP19100CFFTA's 23.5 pF collector-base capacitance affect switching speed in a relay driver?

The 23.5 pF collector-base capacitance (Ccb) determines the Miller charge that must be driven through the base resistor during switching; for a typical relay driver with a 10 kΩ base resistor, the resulting RC time constant is approximately 23.5 pF × 10 kΩ = 235 ns, setting the switching edge transition time — well within the millisecond response requirement of most electromechanical relays operating from a 12 V coil.

Can ZXTP19100CFFTA be driven directly from a 3.3 V microcontroller GPIO to switch a 12 V load?

Yes, for a PNP high-side switch configuration, the GPIO pulls the base low through a current-limiting resistor to turn the transistor on; with VBE of approximately 0.7 V and a base current of at least IC / hFEmin = 2 A / 20 = 100 mA in worst case, a GPIO rated at 8 mA can safely switch loads up to about 160 mA before saturation — use a smaller NPN stage for heavier 2 A loads to maintain sufficient base drive from a 3.3 V GPIO.

When should ZXTP19100CFFTA be chosen over a comparable MOSFET for a low-frequency switching circuit?

ZXTP19100CFFTA is preferred when the gate/base drive voltage is constrained (since its 0.7 V VBE turns on readily with very low drive current), simplicity is valued over efficiency, or the load is highly inductive and a BJT's inherent current-limiting saturation behavior provides a natural protection advantage; at switching frequencies below 10 kHz and load currents under 1 A, the BJT's conduction loss at its roughly 0.2 V to 0.3 V VCEsat is competitive with logic-level MOSFETs in the sub-100 mΩ RDS(on) range.

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Lead Time3-7 business days
MOQFrom 1 piece
ShippingDHL / FedEx / UPS
OriginChina (Authorized)

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