ZXTP19100CFFTA Diodes Inc. Transistor BJT PNP (SO Transistor Flat Lead) In Stock
The ZXTP19100CFFTA is a Diodes Inc. PNP bipolar junction transistor with 100 V collector-emitter voltage, 2 A continuous collector current, and a minimum hFE of 20, housed in a compact flat-lead SOT-23F 3-pin SMD package.
- Manufacturer
- Diodes Inc.
- Package
- SO Transistor Flat Lead
- Pin Count
- 3
- Lifecycle
- ACTIVE
- Datasheet
- ZXTP19100CFFTA Datasheet PDF
- Category
- Transistor BJT PNP
- Temp Range
- -55.0°C to 150.0°C
- RoHS
- Compliant
- Lead Time
- 3–7 business days
- Shipping
- DHL Express · Worldwide
Key Features
- 100 V VCEO rating enables use in high-side switch and motor drive circuits operating from 48 V to 80 V bus supplies
- 2 A continuous collector current supports driving relays, solenoids, and small DC motors directly from logic-level control signals
- SOT-23F flat-lead package occupies under 5 mm² board area, ideal for space-constrained power management circuits
- 23.5 pF collector-base capacitance ensures adequate switching speed for low-frequency PWM and audio amplifier applications
Applications
The ZXTP19100CFFTA is suitable for high-side PNP switching stages in motor drive circuits, relay drivers, and LED dimmer circuits powered from 12 V to 48 V rails, where its 100 V and 2 A ratings provide generous safety margin. It is commonly used in power supply control loops, load switch circuits, and constant-current LED driver topologies that require a compact SMD PNP transistor with moderate hFE. The flat-lead SOT-23F package minimizes parasitic inductance, making it compatible with low-EMI design practices in industrial power modules and automotive auxiliary circuits.
Specifications
| Pbfree Code | Yes |
| Factory Lead Time | 12Weeks |
| YTEOL | 4 |
| Collector Current-Max (IC) | 2A |
| Collector-Base Capacitance-Max | 23.5pF |
| Collector-Emitter Voltage-Max | 100V |
| Configuration | SINGLE |
| DC Current Gain-Min (hFE) | 20 |
| JESD-30 Code | R-PDSO-F3 |
| JESD-609 Code | e3 |
| Number of Elements | 1 |
| Package Body Material | PLASTIC/EPOXY |
| Package Shape | RECTANGULAR |
| Package Style | SMALL OUTLINE |
| Peak Reflow Temperature (Cel) | 260 |
| Polarity/Channel Type | PNP |
| Power Dissipation-Max (Abs) | 1.5W |
| Qualification Status | Not Qualified |
| Reference Standard | MIL-STD-202 |
| Surface Mount | YES |
| Terminal Finish | MATTE TIN |
| Terminal Form | FLAT |
| Terminal Position | DUAL |
| Time@Peak Reflow Temperature-Max (s) | 30 |
| Transistor Application | SWITCHING |
| Transistor Element Material | SILICON |
| Transition Frequency-Nom (fT) | 142MHz |
| VCEsat-Max | 0.275V |
| Package | SO Transistor Flat Lead |
Compliance & Regulatory
| RoHS Status | Compliant |
| Lead-Free | Yes (Pb-Free) |
| Moisture Sensitivity Level | MSL 1 |
| ECCN | EAR99 |
| Country of Origin | Mainland China |
Alternate & Equivalent Parts
No known alternates. Submit an RFQ and our team can suggest alternatives.
Frequently Asked Questions
What are the maximum VCEO and IC ratings of ZXTP19100CFFTA for high-voltage switching?
ZXTP19100CFFTA is rated for a maximum collector-emitter voltage (VCEO) of 100 V and a maximum continuous collector current (IC) of 2 A, making it suitable for PNP high-side switches on 12 V, 24 V, and 48 V bus rails with at least a 2× voltage derating margin from the 100 V ceiling.
How does ZXTP19100CFFTA's 23.5 pF collector-base capacitance affect switching speed in a relay driver?
The 23.5 pF collector-base capacitance (Ccb) determines the Miller charge that must be driven through the base resistor during switching; for a typical relay driver with a 10 kΩ base resistor, the resulting RC time constant is approximately 23.5 pF × 10 kΩ = 235 ns, setting the switching edge transition time — well within the millisecond response requirement of most electromechanical relays operating from a 12 V coil.
Can ZXTP19100CFFTA be driven directly from a 3.3 V microcontroller GPIO to switch a 12 V load?
Yes, for a PNP high-side switch configuration, the GPIO pulls the base low through a current-limiting resistor to turn the transistor on; with VBE of approximately 0.7 V and a base current of at least IC / hFEmin = 2 A / 20 = 100 mA in worst case, a GPIO rated at 8 mA can safely switch loads up to about 160 mA before saturation — use a smaller NPN stage for heavier 2 A loads to maintain sufficient base drive from a 3.3 V GPIO.
When should ZXTP19100CFFTA be chosen over a comparable MOSFET for a low-frequency switching circuit?
ZXTP19100CFFTA is preferred when the gate/base drive voltage is constrained (since its 0.7 V VBE turns on readily with very low drive current), simplicity is valued over efficiency, or the load is highly inductive and a BJT's inherent current-limiting saturation behavior provides a natural protection advantage; at switching frequencies below 10 kHz and load currents under 1 A, the BJT's conduction loss at its roughly 0.2 V to 0.3 V VCEsat is competitive with logic-level MOSFETs in the sub-100 mΩ RDS(on) range.
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