XLMG3422R030RQZT Texas Instruments Integrated Circuit (Other) In Stock
XLMG3422R030RQZT is a 600 V GaN FET from Texas Instruments in 54-pin VQFN package, featuring 30 mΩ on-resistance with integrated gate driver, protection circuitry, and temperature reporting. Available with worldwide shipping.
- Manufacturer
- Texas Instruments
- Package
- Other
- Pin Count
- 55
- Lifecycle
- OBSOLETE
- Datasheet
- XLMG3422R030RQZT Datasheet PDF
- Category
- Integrated Circuit
- Temp Range
- -40.0°C to 125.0°C
- RoHS
- Compliant
- Lead Time
- 3–7 business days
- Shipping
- DHL Express · Worldwide
What are the key features of XLMG3422R030RQZT?
- 600 V breakdown voltage with 30 mΩ on-resistance enabling high-efficiency switching in AC-DC power conversion
- Integrated gate driver and protection circuitry reducing external component count and PCB area in power stage designs
- On-chip temperature reporting allowing real-time thermal monitoring for predictive protection and system reliability
What is XLMG3422R030RQZT used for?
The XLMG3422R030RQZT is designed for high-frequency, high-efficiency power conversion in server power supplies, solar inverters, and EV onboard chargers operating from 400 V or 480 V AC mains. Its 600 V GaN technology and integrated driver enable switching frequencies above 100 kHz, significantly reducing the size of passive filter components compared to silicon MOSFETs. The built-in temperature sensor and protection logic simplify thermal management in thermally dense 54-VQFN power modules.
What are the specifications of XLMG3422R030RQZT?
| Pbfree Code | Yes |
| Date Of Intro | 2020-11-01 |
| YTEOL | 0 |
| Case Connection | SOURCE |
| Configuration | COMPLEX |
| DS Breakdown Voltage-Min | 600V |
| Drain-source On Resistance-Max | 0.035Ω |
| FET Technology | METAL-OXIDE SEMICONDUCTOR |
| JESD-30 Code | S-PQCC-N54 |
| JESD-609 Code | e4 |
| Number of Elements | 1 |
| Operating Mode | ENHANCEMENT MODE |
| Package Body Material | PLASTIC/EPOXY |
| Package Shape | SQUARE |
| Package Style | CHIP CARRIER |
| Polarity/Channel Type | N-CHANNEL |
| Surface Mount | YES |
| Terminal Finish | NICKEL PALLADIUM GOLD |
| Terminal Form | NO LEAD |
| Terminal Position | QUAD |
| Transistor Application | SWITCHING |
| Transistor Element Material | GALLIUM NITRIDE |
| Turn-off Time-Max (toff) | 86ns |
| Turn-on Time-Max (ton) | 56ns |
| Package | Other |
Compliance & Regulatory
| RoHS Status | Compliant |
| Lead-Free | Yes (Pb-Free) |
| ECCN | EAR99 |
| HTS Code | 8542.39.00.01 |
| Country of Origin | Philippines |
Where can I find the XLMG3422R030RQZT datasheet?
XLMG3422R030RQZT Datasheet DownloadOfficial datasheet from Texas Instruments
What are equivalent replacements for XLMG3422R030RQZT?
Compatible alternatives and drop-in replacements for XLMG3422R030RQZT:
Frequently Asked Questions
What on-resistance does XLMG3422R030RQZT achieve and how does that affect converter efficiency compared to silicon MOSFETs?
The XLMG3422R030RQZT specifies a maximum drain-source on-resistance of 35 mΩ (nominal 30 mΩ), which is significantly lower than comparable 600 V silicon MOSFETs that typically range from 60 mΩ to 200 mΩ. At 10 A continuous current, conduction loss is reduced to roughly 3 W versus 6 W or more for silicon, translating directly into higher converter efficiency above 98% in totem-pole PFC stages.
How does the integrated gate driver in XLMG3422R030RQZT simplify GaN power stage design?
GaN FETs typically require external gate drivers with very short propagation delays and precise timing to avoid shoot-through, adding 2 to 4 external ICs and careful high-frequency layout design. The XLMG3422R030RQZT integrates the gate driver inside the 54-VQFN package alongside the GaN FET, eliminating external driver components, reducing parasitic inductance to below 1 nH between driver and gate, and enabling reliable switching at dead times as short as 20 ns.
What does the temperature reporting feature of XLMG3422R030RQZT provide and which system architectures benefit from it?
The on-chip temperature reporting outputs a digital or analog signal proportional to junction temperature, allowing the system controller to monitor thermal conditions in real time without external temperature sensors mounted on the package. Server power supplies and EV chargers benefit most, as they can implement dynamic derating, fan speed control, and predictive fault shutdown before the device reaches its 125°C maximum junction temperature, improving mean time between failures across thousands of operating hours.
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About Texas Instruments
Texas Instruments (TI) is a global semiconductor company headquartered in Dallas, Texas. TI designs and manufactures analog and embedded processing chips used in industrial, automotive, consumer, communications, and enterprise systems.
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