XLMG3410RWHT Texas Instruments Integrated Circuit (Other) In Stock

XLMG3410RWHT is an N-channel depletion-mode power MOSFET from Texas Instruments rated at 480 V breakdown voltage and 12 A drain current in a QFN-32 package. It is designed for high-voltage power conversion applications requiring normally-on switching behaviour. Available from authorised distributors with worldwide shipping.

OBSOLETEIntegrated CircuitVerified Jun 2026
Package / Visual Reference
XLMG3410RWHTOther
Quick Facts
Manufacturer
Texas Instruments
Package
Other
Pin Count
33
Lifecycle
OBSOLETE
Category
Integrated Circuit
Temp Range
-40.0°C to 125.0°C
RoHS
Compliant
Lead Time
3–7 business days
Shipping
DHL Express · Worldwide

What are the key features of XLMG3410RWHT?

  • 480 V minimum drain-source breakdown voltage enabling use in high-voltage off-line power supplies and PFC stages
  • 12 A maximum drain current in a compact QFN-32 package delivering high power density for space-constrained designs
  • Depletion-mode (normally-on) N-channel operation for applications requiring self-start or gate-drive simplification in specific converter topologies

What is XLMG3410RWHT used for?

The XLMG3410RWHT is well suited for high-voltage power conversion applications such as power factor correction circuits, offline flyback converters, and active clamp topologies where the depletion-mode characteristic simplifies start-up sequencing. Its 480 V breakdown voltage supports operation from a rectified 230 V AC mains bus with adequate margin for overvoltage transients. Industrial power supplies, LED driver stages, and DC-DC converters operating in the 300 V to 450 V bus range benefit from its combination of high voltage capability and compact QFN-32 form factor.

What are the specifications of XLMG3410RWHT?

YTEOL0
DS Breakdown Voltage-Min480V
Drain Current-Max (ID)12A
FET TechnologyMETAL-OXIDE SEMICONDUCTOR
JESD-30 CodeS-PQCC-N32
Operating ModeDEPLETION MODE
Package Body MaterialPLASTIC/EPOXY
Package ShapeSQUARE
Package StyleCHIP CARRIER
Polarity/Channel TypeN-CHANNEL
Pulsed Drain Current-Max (IDM)32A
Surface MountYES
Terminal FormNO LEAD
Terminal PositionQUAD
Transistor ApplicationSWITCHING
Transistor Element MaterialGALLIUM NITRIDE
PackageOther

Compliance & Regulatory

RoHS StatusCompliant
Lead-FreeYes (Pb-Free)
ECCNEAR99

Where can I find the XLMG3410RWHT datasheet?

XLMG3410RWHT Datasheet Download

Official datasheet from Texas Instruments

What are equivalent replacements for XLMG3410RWHT?

No known alternates. Submit an RFQ and our team can suggest alternatives.

Frequently Asked Questions

What distinguishes a depletion-mode MOSFET like XLMG3410RWHT from an enhancement-mode device in a power supply design?

A depletion-mode MOSFET such as XLMG3410RWHT conducts at zero gate-source voltage and requires a negative gate drive to turn off, unlike enhancement-mode devices which are off at zero gate bias. This normally-on behaviour simplifies start-up in circuits where the gate driver power supply is derived from the converter output, allowing self-start without an auxiliary supply. Designers must ensure fail-safe shutdown protection since a gate-drive failure leaves the switch conducting at up to 480 V.

For a 400 V DC bus PFC stage, how much margin does the XLMG3410RWHT 480 V rating provide?

Operating from a 400 V DC bus, the XLMG3410RWHT provides an 80 V margin (20%) between normal operating voltage and its 480 V minimum breakdown. IEC 62368 and IPC design guidelines recommend at least 20% voltage derating for power switches, so this device meets the threshold for continuous mains-connected operation. During line transients or surge events up to 430 V, the margin remains within a safe operating area for short pulse widths.

How does the QFN-32 package of XLMG3410RWHT benefit thermal management in a 12 A power converter?

The QFN-32 package has an exposed thermal pad on the bottom that can be soldered directly to the PCB copper pour, achieving junction-to-board thermal resistance below 10 degrees C per watt in a standard 4-layer board layout. At 12 A continuous drain current, this allows the device to dissipate several watts without an external heatsink when the board copper area is at least 2 cm square. Via stitching under the pad further reduces thermal resistance to the inner ground planes.

In a flyback converter application, at what switching frequency can XLMG3410RWHT operate and what determines the upper limit?

The XLMG3410RWHT can typically operate at switching frequencies from 50 kHz to 200 kHz in a flyback topology. The upper frequency limit is governed by the gate charge (Qg) and the available gate driver current; higher Qg increases gate drive losses proportionally with frequency. At 100 kHz with a 12 A drain current, gate drive power dissipation remains manageable with a 1 A to 2 A driver, keeping total switching losses below 2 W in a well-optimised 480 V application.

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About Texas Instruments

Texas Instruments (TI) is a global semiconductor company headquartered in Dallas, Texas. TI designs and manufactures analog and embedded processing chips used in industrial, automotive, consumer, communications, and enterprise systems.

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Lead Time3-7 business days
MOQFrom 1 piece
ShippingDHL / FedEx / UPS
OriginChina (Authorized)

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Their engineering team helped us find a pin-compatible alternative when our original MCU went EOL.

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CTO, AutoDrive Systems, Italy