VS-60EPS08-M3 Vishay Diode (Other) In Stock
VS-60EPS08-M3 is a Vishay high-voltage silicon rectifier diode rated at 60 A forward current and 800 V reverse voltage in a single-configuration SMD package. Features a maximum forward voltage of 1.09 V and targets high-power rectification. Available from stock with worldwide shipping.
- Manufacturer
- Vishay
- Package
- Other
- Pin Count
- 2
- Lifecycle
- ACTIVE
- Datasheet
- VS-60EPS08-M3 Datasheet PDF
- Category
- Diode
- Temp Range
- -40.0°C to 150.0°C
- RoHS
- Compliant
- Lead Time
- 3–7 business days
- Shipping
- DHL Express · Worldwide
Key Features
- 800 V peak reverse voltage rating enables use in high-line AC/DC rectification stages operating from 230 V or 277 V mains supplies
- 60 A continuous forward current capacity with only 1.09 V maximum VF minimizes conduction losses in high-power rectifier bridges and boost PFC circuits
- Single-configuration silicon rectifier in compact SMD (SMP/DO-218AB) package allows high-density power stage layout without axial lead forming
- High-voltage silicon construction with cathode case connection simplifies heat-sink attachment and thermal management in chassis-mounted power designs
Applications
VS-60EPS08-M3 is used as a free-wheeling diode, output rectifier, or bridge element in high-power AC/DC converters, motor drive inverters, and PFC boost stages handling 800 V peak reverse voltage at up to 60 A continuous current. Its low 1.09 V forward voltage drop reduces conduction losses in three-phase rectifier bridges for industrial variable-speed drives and welding power supplies. The SMD package suits automated PCB assembly in compact high-power converter modules where axial through-hole diodes are impractical.
Specifications
| Factory Lead Time | 16Weeks |
| YTEOL | 6.02 |
| Application | HIGH VOLTAGE |
| Case Connection | CATHODE |
| Configuration | SINGLE |
| Diode Element Material | SILICON |
| Diode Type | RECTIFIER DIODE |
| Forward Voltage-Max (VF) | 1.09V |
| JESD-30 Code | R-PSFM-T2 |
| JESD-609 Code | e3 |
| Non-rep Pk Forward Current-Max | 1000A |
| Number of Elements | 1 |
| Number of Phases | 1 |
| Output Current-Max | 60A |
| Package Body Material | PLASTIC/EPOXY |
| Package Shape | RECTANGULAR |
| Package Style | FLANGE MOUNT |
| Rep Pk Reverse Voltage-Max | 800V |
| Reverse Current-Max | 100 µA |
| Reverse Test Voltage | 800V |
| Surface Mount | NO |
| Terminal Finish | MATTE TIN OVER NICKEL |
| Terminal Form | THROUGH-HOLE |
| Terminal Position | SINGLE |
| Package | Other |
Compliance & Regulatory
| RoHS Status | Compliant |
| Lead-Free | Yes (Pb-Free) |
| ECCN | EAR99 |
| HTS Code | 8541.10.00.80 |
Alternate & Equivalent Parts
No known alternates. Submit an RFQ and our team can suggest alternatives.
Frequently Asked Questions
What forward current and reverse voltage ratings make VS-60EPS08-M3 suitable for three-phase rectifier bridge designs?
VS-60EPS08-M3 is rated for 60 A continuous forward current and 800 V peak reverse voltage, with a maximum forward voltage of 1.09 V at full load. In a three-phase full-wave bridge (6-pulse rectifier) fed from a 480 V AC line, the peak inverse voltage across each diode reaches approximately 680 V, so the 800 V rating provides a comfortable safety margin for transient spikes without requiring snubber circuits.
How does the 1.09 V maximum forward voltage of VS-60EPS08-M3 affect power dissipation in a 50 A output rectifier?
At 50 A average diode current and 1.09 V VF maximum, conduction loss is approximately 54.5 W per diode. In a full-wave bridge with two diodes conducting simultaneously, total rectifier conduction loss reaches about 109 W at full load. Choosing VS-60EPS08-M3 over a standard silicon diode with 1.4 V VF would save roughly 35 W, reducing heatsink size requirements and improving overall PSU efficiency by approximately 0.5% in a 10 kW system.
Which thermal management approach is recommended for VS-60EPS08-M3 in an enclosed switching power supply chassis?
VS-60EPS08-M3 is housed in a PSFM (DO-218AB-compatible) SMD package with the cathode electrically connected to the metal case. Mounting directly to a copper heat-spreader pad on the PCB with a minimum 2 cm² copper pour reduces junction-to-ambient thermal resistance below 5°C/W, keeping Tj below 150°C at 60 A. For enclosed supplies above 3 kW, an aluminum extruded heatsink with thermal interface material rated below 0.5°C·cm²/W is recommended.
Is VS-60EPS08-M3 a viable replacement for a TO-247 axial diode in an existing power module design being converted to SMT?
VS-60EPS08-M3 in the DO-218AB (PSFM) SMD footprint cannot directly substitute a TO-247 through-hole diode without PCB layout changes. However, its 60 A / 800 V ratings match many TO-247 silicon rectifiers, so it is electrically equivalent. The PCB land pattern for PSFM measures approximately 16.7 mm × 8.1 mm, requiring a redesigned copper pad and thermal via array but enabling a fully SMT power stage with reduced assembly cost.
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