VN3205N3-G Microchip MOSFET (N-Channel) (Other) In Stock

Name: VN3205N3-G
Brand: Microchip
SKU: VN3205N3-G
Availability: InStock

Microchip VN3205N3-G is an N-channel D-MOSFET rated at 50 V breakdown voltage and 1.2 A drain current with 0.3 Ω on-resistance and built-in diode, housed in a TO-92-3 package for low-power switching and general-purpose applications.

ACTIVEMOSFET (N-Channel)Verified Jun 2026

Package / Visual Reference

VN3205N3-GOther

Quick Facts

Manufacturer: Microchip
Package: Other
Pin Count: 3
Lifecycle: ACTIVE
Datasheet: VN3205N3-G Datasheet PDF
Category: MOSFET (N-Channel)
Price: From $0.2400(MOQ 1)
Temp Range: -55.0°C to 150.0°C
RoHS: Compliant
Lead Time: 3–7 business days
Shipping: DHL Express · Worldwide

What are the key features of VN3205N3-G?

50 V drain-source breakdown voltage with 1.2 A maximum drain current for low-power switching circuits
Low 0.3 Ω drain-source on-resistance for minimal conduction losses at rated current
Built-in body diode configuration for flyback protection in inductive load circuits
High input impedance with 30 pF maximum feedback capacitance for stable gate drive
TO-92-3 through-hole package enabling easy hand-soldering and prototype assembly

What is VN3205N3-G used for?

The VN3205N3-G is suited for low-side load switching, signal-level switching, and general-purpose small-signal amplification in consumer electronics and industrial equipment. Its 50 V, 1.2 A rating makes it a practical choice for driving small relays, LEDs, solenoids, and motor loads in compact control boards. The TO-92-3 package is commonly used in educational kits, hobby electronics, and low-volume production where through-hole assembly is preferred.

What are the specifications of VN3205N3-G?

Manufacturer Package Code	TO-92-3
Factory Lead Time	7Weeks
YTEOL	9
Additional Feature	HIGH INPUT IMPEDANCE
Configuration	SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min	50V
Drain Current-Max (ID)	1.2A
Drain-source On Resistance-Max	0.3Ω
FET Technology	METAL-OXIDE SEMICONDUCTOR
Feedback Cap-Max (Crss)	30pF
JEDEC-95 Code	TO-92
JESD-30 Code	O-PBCY-T3
JESD-609 Code	e3
Number of Elements	1
Operating Mode	ENHANCEMENT MODE
Package Body Material	PLASTIC/EPOXY
Package Shape	ROUND
Package Style	CYLINDRICAL
Polarity/Channel Type	N-CHANNEL
Power Dissipation Ambient-Max	1W
Power Dissipation-Max (Abs)	1W
Qualification Status	Not Qualified
Surface Mount	NO
Terminal Finish	Matte Tin (Sn)
Terminal Form	THROUGH-HOLE
Terminal Position	BOTTOM
Transistor Application	SWITCHING
Transistor Element Material	SILICON
Package	Other

Compliance & Regulatory

RoHS Status	Compliant
Lead-Free	Yes (Pb-Free)
ECCN	EAR99
HTS Code	8541.29.00.95
Country of Origin	Philippines, Taiwan

Where can I find the VN3205N3-G datasheet?

VN3205N3-G Datasheet Download

Official datasheet from Microchip

What are equivalent replacements for VN3205N3-G?

No known alternates. Submit an RFQ and our team can suggest alternatives.

Frequently Asked Questions

Can VN3205N3-G drive a 12 V relay coil directly from a microcontroller GPIO output?

Yes, VN3205N3-G supports up to 50 V drain-source breakdown and 1.2 A drain current, which comfortably handles most 12 V relay coils drawing 50–100 mA. The built-in body diode also provides flyback suppression, simplifying the external circuitry needed for inductive load protection.

How does the 0.3 Ω on-resistance affect power dissipation when switching 500 mA loads continuously?

At 500 mA, the 0.3 Ω drain-source on-resistance of VN3205N3-G produces approximately 75 mW of conduction loss (P = I² × R), which is well within the TO-92-3 package's thermal capability for most ambient temperatures without a heatsink.

What through-hole PCB layout advantages does the TO-92-3 package provide for prototype and low-volume production boards?

The TO-92-3 package has 3 through-hole leads on a standard 2.54 mm pitch, allowing the VN3205N3-G to be placed and soldered by hand without specialized SMT equipment, which reduces assembly cost and simplifies prototyping, small-batch production, and field repair scenarios.

Is VN3205N3-G suitable for circuits where the gate may be left floating or driven by a high-impedance source?

VN3205N3-G features a depletion-mode (D-MOSFET) topology with high input impedance and 30 pF feedback capacitance, making it normally-on by default; designers should ensure the gate is properly biased to avoid unintended conduction, particularly in applications where the drive signal is weak or intermittent.

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AvailabilityIn Stock

Reference Price (USD)

From $0.2400

Buy from 1pc · Factory-direct pricing

Qty.	Unit Price	Ext. Price
1+	$0.2400	$0.24

pcs

Unit price: $0.2400 · Total: $0.24

In Stock · 24h Response · Worldwide Shipping

Direct Contact

WhatsApp Inquiry Email RFQ

Lead Time3-7 business days

MOQFrom 1 piece

ShippingDHL / FedEx / UPS

OriginChina (Authorized)

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Procurement Manager, VoltEdge Energy, India

VN3205N3-G Microchip MOSFET (N-Channel) (Other) In Stock

What are the key features of VN3205N3-G?

What is VN3205N3-G used for?

What are the specifications of VN3205N3-G?

Compliance & Regulatory

Where can I find the VN3205N3-G datasheet?

What are equivalent replacements for VN3205N3-G?

Frequently Asked Questions

Can VN3205N3-G drive a 12 V relay coil directly from a microcontroller GPIO output?

How does the 0.3 Ω on-resistance affect power dissipation when switching 500 mA loads continuously?

What through-hole PCB layout advantages does the TO-92-3 package provide for prototype and low-volume production boards?

Is VN3205N3-G suitable for circuits where the gate may be left floating or driven by a high-impedance source?

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