VN3205N3-G Microchip MOSFET (N-Channel) (Other) In Stock
Microchip VN3205N3-G is an N-channel D-MOSFET rated at 50 V breakdown voltage and 1.2 A drain current with 0.3 Ω on-resistance and built-in diode, housed in a TO-92-3 package for low-power switching and general-purpose applications.
- Manufacturer
- Microchip
- Package
- Other
- Pin Count
- 3
- Lifecycle
- ACTIVE
- Datasheet
- VN3205N3-G Datasheet PDF
- Category
- MOSFET (N-Channel)
- Temp Range
- -55.0°C to 150.0°C
- RoHS
- Compliant
- Lead Time
- 3–7 business days
- Shipping
- DHL Express · Worldwide
Key Features
- 50 V drain-source breakdown voltage with 1.2 A maximum drain current for low-power switching circuits
- Low 0.3 Ω drain-source on-resistance for minimal conduction losses at rated current
- Built-in body diode configuration for flyback protection in inductive load circuits
- High input impedance with 30 pF maximum feedback capacitance for stable gate drive
- TO-92-3 through-hole package enabling easy hand-soldering and prototype assembly
Applications
The VN3205N3-G is suited for low-side load switching, signal-level switching, and general-purpose small-signal amplification in consumer electronics and industrial equipment. Its 50 V, 1.2 A rating makes it a practical choice for driving small relays, LEDs, solenoids, and motor loads in compact control boards. The TO-92-3 package is commonly used in educational kits, hobby electronics, and low-volume production where through-hole assembly is preferred.
Specifications
| Manufacturer Package Code | TO-92-3 |
| Factory Lead Time | 7Weeks |
| YTEOL | 9 |
| Additional Feature | HIGH INPUT IMPEDANCE |
| Configuration | SINGLE WITH BUILT-IN DIODE |
| DS Breakdown Voltage-Min | 50V |
| Drain Current-Max (ID) | 1.2A |
| Drain-source On Resistance-Max | 0.3Ω |
| FET Technology | METAL-OXIDE SEMICONDUCTOR |
| Feedback Cap-Max (Crss) | 30pF |
| JEDEC-95 Code | TO-92 |
| JESD-30 Code | O-PBCY-T3 |
| JESD-609 Code | e3 |
| Number of Elements | 1 |
| Operating Mode | ENHANCEMENT MODE |
| Package Body Material | PLASTIC/EPOXY |
| Package Shape | ROUND |
| Package Style | CYLINDRICAL |
| Polarity/Channel Type | N-CHANNEL |
| Power Dissipation Ambient-Max | 1W |
| Power Dissipation-Max (Abs) | 1W |
| Qualification Status | Not Qualified |
| Surface Mount | NO |
| Terminal Finish | Matte Tin (Sn) |
| Terminal Form | THROUGH-HOLE |
| Terminal Position | BOTTOM |
| Transistor Application | SWITCHING |
| Transistor Element Material | SILICON |
| Package | Other |
Compliance & Regulatory
| RoHS Status | Compliant |
| Lead-Free | Yes (Pb-Free) |
| ECCN | EAR99 |
| HTS Code | 8541.29.00.95 |
| Country of Origin | Philippines, Taiwan |
Alternate & Equivalent Parts
No known alternates. Submit an RFQ and our team can suggest alternatives.
Frequently Asked Questions
Can VN3205N3-G drive a 12 V relay coil directly from a microcontroller GPIO output?
Yes, VN3205N3-G supports up to 50 V drain-source breakdown and 1.2 A drain current, which comfortably handles most 12 V relay coils drawing 50–100 mA. The built-in body diode also provides flyback suppression, simplifying the external circuitry needed for inductive load protection.
How does the 0.3 Ω on-resistance affect power dissipation when switching 500 mA loads continuously?
At 500 mA, the 0.3 Ω drain-source on-resistance of VN3205N3-G produces approximately 75 mW of conduction loss (P = I² × R), which is well within the TO-92-3 package's thermal capability for most ambient temperatures without a heatsink.
What through-hole PCB layout advantages does the TO-92-3 package provide for prototype and low-volume production boards?
The TO-92-3 package has 3 through-hole leads on a standard 2.54 mm pitch, allowing the VN3205N3-G to be placed and soldered by hand without specialized SMT equipment, which reduces assembly cost and simplifies prototyping, small-batch production, and field repair scenarios.
Is VN3205N3-G suitable for circuits where the gate may be left floating or driven by a high-impedance source?
VN3205N3-G features a depletion-mode (D-MOSFET) topology with high input impedance and 30 pF feedback capacitance, making it normally-on by default; designers should ensure the gate is properly biased to avoid unintended conduction, particularly in applications where the drive signal is weak or intermittent.
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