VN2410L-G-P014 Microchip MOSFET (N-Channel) (Other) In Stock
Microchip VN2410L-G-P014 is an N-channel enhancement-mode vertical DMOS MOSFET with a 240 V minimum drain-source breakdown voltage and a 190 mA maximum drain current, packaged in a through-hole TO-92-3 case with integrated body diode. Its 10 Ω maximum on-resistance suits low-current, high-voltage switching applications in consumer and industrial circuits. Available from authorized distributors with worldwide shipping.
- Manufacturer
- Microchip
- Package
- Other
- Pin Count
- 3
- Lifecycle
- ACTIVE
- Datasheet
- VN2410L-G-P014 Datasheet PDF
- Category
- MOSFET (N-Channel)
- Price
- From $0.6203(MOQ 1)
- Temp Range
- -55.0°C to 150.0°C
- RoHS
- Compliant
- Lead Time
- 3–7 business days
- Shipping
- DHL Express · Worldwide
Key Features
- 240 V minimum drain-source breakdown voltage enables safe operation in offline AC-derived or high-voltage DC power circuits
- Integrated built-in body diode eliminates need for an external freewheeling diode in inductive load switching applications
- 190 mA maximum drain current in a compact TO-92-3 through-hole package for simple board insertion without specialized SMT equipment
- N-channel enhancement-mode operation requires positive gate-source voltage for turn-on, simplifying gate drive design from logic-level or PWM controllers
Applications
The VN2410L-G-P014 is suited for low-current, high-voltage switching in offline power supplies, flyback converter auxiliary windings, and TRIAC trigger circuits operating from rectified AC mains voltages up to 240 V. It is also used in LED driver circuits and small relay drive stages in home appliances where a simple TO-92 MOSFET switch is preferred over a higher-cost SMT device. Industrial sensor signal conditioning circuits and fault protection switches benefit from its high blocking voltage and integrated body diode for inductive kickback suppression.
Specifications
| Pbfree Code | Yes |
| Manufacturer Package Code | TO-92-3 |
| Reach Compliance Code | Compliant |
| Factory Lead Time | 7Weeks |
| YTEOL | 9 |
| Configuration | SINGLE WITH BUILT-IN DIODE |
| DS Breakdown Voltage-Min | 240V |
| Drain Current-Max (ID) | 0.19A |
| Drain-source On Resistance-Max | 10Ω |
| FET Technology | METAL-OXIDE SEMICONDUCTOR |
| Feedback Cap-Max (Crss) | 20pF |
| JEDEC-95 Code | TO-92 |
| JESD-30 Code | O-PBCY-T3 |
| JESD-609 Code | e3 |
| Number of Elements | 1 |
| Operating Mode | ENHANCEMENT MODE |
| Package Body Material | PLASTIC/EPOXY |
| Package Shape | ROUND |
| Package Style | CYLINDRICAL |
| Polarity/Channel Type | N-CHANNEL |
| Power Dissipation-Max (Abs) | 1W |
| Surface Mount | NO |
| Terminal Finish | Matte Tin (Sn) |
| Terminal Form | THROUGH-HOLE |
| Terminal Position | BOTTOM |
| Transistor Application | SWITCHING |
| Transistor Element Material | SILICON |
| Package | Other |
Compliance & Regulatory
| RoHS Status | Compliant |
| Lead-Free | Yes (Pb-Free) |
| ECCN | EAR99 |
| HTS Code | 8541.29.00.95 |
| Country of Origin | Philippines |
Alternate & Equivalent Parts
No known alternates. Submit an RFQ and our team can suggest alternatives.
Frequently Asked Questions
What drain-source breakdown voltage does the VN2410L-G-P014 guarantee, and why does this matter for AC mains applications?
The VN2410L-G-P014 guarantees a minimum drain-source breakdown voltage (V_DSS) of 240 V. In AC mains applications operating from a 120 V or 230 V rectified supply, the peak DC bus voltage can reach 170 V or 325 V respectively, plus inductive switching spikes. A 240 V rated device is appropriate for low-voltage AC circuits and auxiliary supply rails where peak voltages are managed well below the breakdown rating with adequate design margin.
How much current can the VN2410L-G-P014 switch continuously, and what load types is it suitable for?
The VN2410L-G-P014 supports a maximum continuous drain current (I_D) of 190 mA. This is adequate for switching small resistive or inductive loads such as LED strings, small relay coils (typically 50 mA to 150 mA at 12 V or 24 V), optocoupler LEDs, and low-power solenoid actuators. For higher-current loads, a larger MOSFET with I_D above 1 A would be required.
What is the maximum on-resistance of the VN2410L-G-P014 and how does it affect power dissipation?
The VN2410L-G-P014 has a maximum drain-source on-resistance (R_DS(on)) of 10 Ω at the specified gate-source voltage. At full rated drain current of 190 mA, this results in a worst-case conduction power loss of approximately 0.19 A² × 10 Ω = 0.36 W — manageable in a TO-92 package with natural convection cooling. For duty-cycled PWM applications, average dissipation will be proportionally lower, keeping junction temperatures well within the thermal limits of the package.
Does the built-in body diode in the VN2410L-G-P014 eliminate the need for an external freewheeling diode in relay or solenoid drive circuits?
Yes, the VN2410L-G-P014 includes a built-in body diode (integrated in the DMOS vertical structure) that provides a reverse-current path when the MOSFET turns off and an inductive load (relay coil, solenoid, motor winding) generates a back-EMF voltage spike. This body diode clamps the drain voltage below the breakdown rating during turn-off, eliminating the need for an external 1N4148 or Schottky diode in most relay and solenoid switch designs and reducing component count by 1 to 2 parts per switch node.
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| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 1+ | $1.2800 | $1.28 |
| 100+ | $0.7500 | $75.00 |
| 500+ | $0.7000 | $350.00 |
| 1500+ | $0.6860 | $1029.00 |
| 2000+ | $0.6720 | $1344.00 |
| 8000+ | $0.6202 | $4962.00 |
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