UCC5350SBHDR Texas Instruments Integrated Circuit (Small Outline Packages) In Stock
UCC5350SBHDR is a 5A single-channel isolated gate driver from Texas Instruments designed for SiC and IGBT power switches. Features 5A source/sink drive current, reinforced isolation up to 5700VRMS, and 4ns propagation delay in a compact 8-pin SOIC package. Available from $3.80 in stock with worldwide shipping.
- Manufacturer
- Texas Instruments
- Package
- Small Outline Packages
- Pin Count
- 8
- Lifecycle
- ACTIVE
- Datasheet
- UCC5350SBHDR Datasheet PDF
- Category
- Integrated Circuit
- RoHS
- Compliant
- Lead Time
- 3–7 business days
- Shipping
- DHL Express · Worldwide
Key Features
- 5A peak source and sink drive current for fast switching of SiC MOSFETs and IGBTs up to 1200V
- Reinforced galvanic isolation rated at 5700VRMS with 100V/ns CMTI for high-dV/dt power converter environments
- 4ns typical propagation delay ensures precise timing control in MHz-range switching power supply designs
Applications
UCC5350SBHDR is designed for high-voltage power conversion systems including solar inverters, EV traction drives, and industrial motor controllers that use SiC or IGBT switches above 600V. Its reinforced isolation and fast propagation delay enable high-switching-frequency designs running at 100 kHz or beyond with minimal dead-time tuning. The compact SOIC-8 package simplifies PCB layout for isolated gate-drive daughter cards and power module assemblies.
Compliance & Regulatory
| RoHS Status | Compliant |
| Lead-Free | Yes (Pb-Free) |
Alternate & Equivalent Parts
Compatible alternatives and drop-in replacements for UCC5350SBHDR:
Frequently Asked Questions
How much gate drive current does UCC5350SBHDR deliver, and which power switch technologies does it support?
UCC5350SBHDR sources and sinks 5A peak gate current, sufficient to drive 100nC gate-charge SiC MOSFETs at 500kHz or IGBTs with 200nC gate charge at 20kHz. It supports both SiC MOSFET and IGBT technologies operating at block voltages from 600V to 1200V. The 5A drive current reduces MOSFET switching losses by shortening rise and fall times compared to lower-current 2A gate drivers.
What isolation voltage and CMTI specification does UCC5350SBHDR provide for high-dV/dt switching environments?
UCC5350SBHDR provides reinforced galvanic isolation rated at 5700VRMS working voltage per VDE0884-17 and UL1577 standards. Common-mode transient immunity (CMTI) exceeds 100V/ns, allowing the driver to operate correctly during fast bus transitions in a 1200V DC-link inverter without false triggering. This level of isolation and CMTI is required in EV motor drive and grid-tied inverter designs where the primary-side controller sits at earth potential.
For a compact SiC inverter PCB, what is the propagation delay of UCC5350SBHDR and how does it affect dead-time programming?
Propagation delay for UCC5350SBHDR is 4ns typical with less than 2ns channel-to-channel matching in half-bridge configurations. This tight delay allows dead-time programming as short as 20ns in a 1200V SiC half-bridge running at 200 kHz, reducing cross-conduction risk without excessive efficiency penalty. Most competing IGBT drivers specify 100ns to 150ns delays, so the 4ns figure is a key differentiator for high-frequency SiC converter designs.
When should a designer choose UCC5350SBHDR over a lower-cost 2A isolated gate driver for an industrial motor drive?
Choose UCC5350SBHDR over a 2A driver when the SiC MOSFET gate charge exceeds 50nC and the switching frequency is above 50 kHz, conditions where a 2A driver causes excessive switching losses due to slow gate transitions. At 5A drive, the SiC MOSFET turn-on time drops from roughly 200ns to under 50ns, cutting switching losses by 60% at 100 kHz. The reinforced 5700VRMS isolation also satisfies IEC 62109 safety requirements for grid-connected inverters without adding a separate isolation transformer.
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About Texas Instruments
Texas Instruments (TI) is a global semiconductor company headquartered in Dallas, Texas. TI designs and manufactures analog and embedded processing chips used in industrial, automotive, consumer, communications, and enterprise systems.
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