UCC27288DR Texas Instruments Integrated Circuit (Small Outline Packages) In Stock
The UCC27288DR is a high-performance 120V half-bridge gate driver with asymmetric 2.5A sink and 3.5A source current capability for both high-side and low-side channels, featuring Schmitt-trigger inputs and 8V UVLO protection. It drives N-channel MOSFETs and IGBTs in half-bridge topologies without a built-in bootstrap diode, allowing designers to select an external diode for optimal performance. Available in an 8-pin SOIC package from authorized global distributors in stock with worldwide shipping.
- Manufacturer
- Texas Instruments
- Package
- Small Outline Packages
- Pin Count
- 8
- Lifecycle
- ACTIVE
- Datasheet
- UCC27288DR Datasheet PDF
- Category
- Integrated Circuit
- Temp Range
- -40.0°C to 125.0°C
- RoHS
- Compliant
- Lead Time
- 3–7 business days
- Shipping
- DHL Express · Worldwide
Key Features
- Asymmetric 3.5A source / 2.5A sink peak output current per channel enables fast MOSFET switching transitions, reducing switching losses in high-frequency half-bridge and full-bridge power converter designs
- 120V bootstrap supply voltage rating with no internal bootstrap diode allows designers to select an external diode optimized for their specific switching frequency, voltage, and thermal requirements
- 8V UVLO (undervoltage lockout) protection with hysteresis prevents shoot-through and undefined switching states during power-up and power-down transients, improving system reliability
- Schmitt-trigger input thresholds provide noise immunity and clean switching behavior even with slow-rising PWM control signals from microcontrollers or DSP PWM peripherals
Applications
The UCC27288DR is designed for half-bridge and full-bridge power conversion topologies including DC-DC converters, motor drives, and synchronous rectifiers operating at switching frequencies up to several hundred kilohertz with bus voltages up to 120V. It is well suited for industrial servo drives, EV auxiliary power modules, solar microinverters, and telecom power supplies where precise MOSFET gate control and fast turn-on/turn-off timing are critical to efficiency and EMI performance. The flexible external bootstrap diode configuration makes it adaptable to wide-bandgap GaN and SiC FET applications that require specific diode characteristics.
Specifications
| Pbfree Code | Yes |
| Date Of Intro | 2020-10-09 |
| YTEOL | 15 |
| High Side Driver | YES |
| Input Characteristics | SCHMITT TRIGGER |
| Interface IC Type | HALF BRIDGE BASED MOSFET DRIVER |
| JESD-30 Code | R-PDSO-G8 |
| JESD-609 Code | e4 |
| Number of Channels | 2 |
| Number of Functions | 1 |
| Output Characteristics | TOTEM-POLE |
| Output Current-Max | 3.5A |
| Output Peak Current Limit-Nom | 3.5A |
| Output Polarity | TRUE |
| Package Body Material | PLASTIC/EPOXY |
| Package Equivalence Code | SOP8,.25 |
| Package Shape | RECTANGULAR |
| Package Style | SMALL OUTLINE |
| Peak Reflow Temperature (Cel) | 260 |
| Supply Current-Max | 4.5mA |
| Supply Voltage-Max | 16V |
| Supply Voltage-Min | 8V |
| Supply Voltage-Nom | 12V |
| Supply Voltage1-Max | 116V |
| Supply Voltage1-Nom | 12V |
| Surface Mount | YES |
| Temperature Grade | AUTOMOTIVE |
| Terminal Finish | Nickel/Palladium/Gold (Ni/Pd/Au) |
| Terminal Form | GULL WING |
| Terminal Pitch | 1.27mm |
| Terminal Position | DUAL |
| Time@Peak Reflow Temperature-Max (s) | 30 |
| Turn-off Time | 0.03 µs |
| Turn-on Time | 0.03 µs |
| Package | Small Outline Packages |
Compliance & Regulatory
| RoHS Status | Compliant |
| Lead-Free | Yes (Pb-Free) |
| Moisture Sensitivity Level | MSL 2 |
| ECCN | EAR99 |
| HTS Code | 8542.39.00.90 |
| Country of Origin | Mexico |
Alternate & Equivalent Parts
Compatible alternatives and drop-in replacements for UCC27288DR:
Frequently Asked Questions
What is the peak output current capability of the UCC27288DR?
The UCC27288DR provides asymmetric peak gate drive current of 3.5A source and 2.5A sink for both the high-side and low-side channels. This asymmetry allows faster turn-on than turn-off or vice versa depending on orientation, enabling precise control of MOSFET switching speed to balance switching losses against EMI in the target application.
Why does the UCC27288DR have no internal bootstrap diode?
The UCC27288DR intentionally omits an internal bootstrap diode to give designers the freedom to select an external diode with characteristics optimized for their design. Internal diodes in competing products may have reverse recovery times or forward voltage drops that are suboptimal for high-frequency operation or wide-bandgap FETs. An external SiC Schottky diode, for example, can significantly reduce bootstrap charging losses at switching frequencies above 100kHz.
What is the UVLO threshold of the UCC27288DR?
The UCC27288DR features an 8V undervoltage lockout (UVLO) threshold on the VDD supply with hysteresis. When VDD falls below 8V, the driver disables both output channels to prevent partial gate drive that could cause MOSFET shoot-through or undefined switching states. The hysteresis ensures clean enable/disable transitions during power sequencing without chatter.
What package and temperature range does the UCC27288DR support?
The UCC27288DR comes in an 8-pin SOIC (Small Outline IC) package with JESD-30 code R-PDSO-G8, which is a standard footprint widely supported by PCB design tools and manufacturing processes. The JESD-609 code e4 indicates RoHS-compliant, lead-free construction. The device is rated for industrial temperature ranges, making it suitable for automotive-adjacent and industrial power electronics applications.
What power topologies is the UCC27288DR best suited for?
The UCC27288DR is optimized for half-bridge and full-bridge power converter topologies where two N-channel MOSFETs or IGBTs operate in complementary switching configurations. Typical applications include synchronous buck converters, phase-leg inverters for motor drives, LLC resonant converters, and totem-pole PFC stages. Its 120V bootstrap rating covers 48V bus and below bus voltage applications common in telecom, industrial, and EV onboard charger designs.
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Texas Instruments (TI) is a global semiconductor company headquartered in Dallas, Texas. TI designs and manufactures analog and embedded processing chips used in industrial, automotive, consumer, communications, and enterprise systems.
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