UCC21540AQDWKQ1 Texas Instruments Integrated Circuit (Small Outline Packages) In Stock
The UCC21540AQDWKQ1 is an AEC-Q100-qualified reinforced isolation dual-channel gate driver capable of 4 A source and 6 A sink peak current, with a 5.7 kVRMS isolation rating in a 16-pin SOIC-W package. It targets automotive traction inverters and onboard chargers operating IGBT and SiC MOSFET switches up to 1200 V. Available from stock with worldwide shipping.
- Manufacturer
- Texas Instruments
- Package
- Small Outline Packages
- Pin Count
- 16
- Lifecycle
- ACTIVE
- Datasheet
- UCC21540AQDWKQ1 Datasheet PDF
- Category
- Integrated Circuit
- RoHS
- Compliant
- Lead Time
- 3–7 business days
- Shipping
- DHL Express · Worldwide
What are the key features of UCC21540AQDWKQ1?
- 5.7 kVRMS reinforced galvanic isolation meets IEC 60950 and automotive safety requirements, allowing direct gate-drive of 1200 V SiC MOSFETs and IGBTs in HEV/EV traction inverters
- AEC-Q100 Grade A automotive qualification with -40°C to +125°C ambient operating range enables confident use in underhood and charging station power modules
- Asymmetric 4 A source / 6 A sink peak gate drive current accelerates turn-on and turn-off transitions in high-frequency SiC designs, reducing switching losses at 100 kHz or above
What is UCC21540AQDWKQ1 used for?
The UCC21540AQDWKQ1 is designed for automotive-grade power conversion stages including EV traction inverters, onboard chargers, and DC-DC converters where reinforced isolation between the high-voltage power stage and the low-voltage control board is mandatory. Its dual-channel output in a single package supports half-bridge and totem-pole configurations directly, driving 1200 V SiC MOSFETs or IGBTs at switching frequencies up to 100 kHz or higher. Industrial motor drives and solar string inverters that require reinforced isolation and AEC-grade reliability also benefit from this driver's high-current output and tight propagation delay matching between channels.
Compliance & Regulatory
| RoHS Status | Compliant |
| Lead-Free | Yes (Pb-Free) |
Where can I find the UCC21540AQDWKQ1 datasheet?
UCC21540AQDWKQ1 Datasheet DownloadOfficial datasheet from Texas Instruments
What are equivalent replacements for UCC21540AQDWKQ1?
Compatible alternatives and drop-in replacements for UCC21540AQDWKQ1:
Frequently Asked Questions
How does the 5.7 kVRMS isolation rating of the UCC21540AQDWKQ1 compare to basic isolation requirements for EV traction inverters?
EV traction inverters operating from 400 V or 800 V DC bus must meet reinforced isolation standards such as IEC 62368-1 or ISO 26262 functional safety requirements, which typically mandate a working voltage withstand of at least 1500 V to 3000 V between the HV bus and the low-voltage control domain. The UCC21540AQDWKQ1's 5.7 kVRMS rating provides approximately 2× to 3× margin over these minimums, satisfying both the steady-state working voltage and the transient surge requirements in a single-component solution without an external isolation transformer.
What switching frequency is the UCC21540AQDWKQ1 suited for when driving SiC MOSFETs in an onboard charger?
With propagation delays below 50 ns and a 4 A source / 6 A sink peak current output, the UCC21540AQDWKQ1 supports SiC MOSFET switching at 100 kHz to 300 kHz without significant dead-time or timing-margin concerns. Operating at these frequencies reduces the required magnetic component sizes by 5× to 10× compared to silicon IGBT designs at 20 kHz, which is the main reason automotive onboard charger designers choose SiC plus a high-speed reinforced gate driver like this one.
Can the UCC21540AQDWKQ1 drive both the high-side and low-side switches in a half-bridge topology from a single IC?
Yes. The device provides two independent isolated gate-drive channels in one 16-pin SOIC-W package, each with its own isolated power supply and signal path. In a half-bridge, channel A drives the high-side switch and channel B drives the low-side switch. The separate isolation barriers (5.7 kVRMS per channel) prevent shoot-through coupling between the two channels, and the matched propagation delays — typically within 5 ns of each other — allow precise dead-time programming down to the 100 ns range needed for efficient SiC switching.
How does the asymmetric source/sink current of the UCC21540AQDWKQ1 benefit SiC MOSFET gate-drive design?
SiC MOSFETs benefit from slower turn-on (to limit dV/dt and reduce ringing) and faster turn-off (to minimize tail current losses), which matches the UCC21540AQDWKQ1's 4 A source and 6 A sink asymmetry. Designers can set a turn-on gate resistor of 5 Ω to 10 Ω and a turn-off resistor as low as 1 Ω to 2 Ω, achieving turn-off transition times below 100 ns on a 1200 V / 30 A SiC device while limiting the dV/dt to under 50 V/ns during turn-on to protect neighboring EMI-sensitive circuits.
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About Texas Instruments
Texas Instruments (TI) is a global semiconductor company headquartered in Dallas, Texas. TI designs and manufactures analog and embedded processing chips used in industrial, automotive, consumer, communications, and enterprise systems.
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