TPS1110DR Texas Instruments Integrated Circuit (Small Outline Packages) In Stock
The TPS1110DR is a logic-level compatible N-channel MOSFET power switch with built-in diode, 6 A drain current, and 75 mΩ on-resistance in an 8-pin SOIC package. Features 7 V minimum breakdown voltage for robust load switching in 5 V systems. From $1.80 in stock worldwide shipping.
- Manufacturer
- Texas Instruments
- Package
- Small Outline Packages
- Pin Count
- 8
- Lifecycle
- OBSOLETE
- Datasheet
- TPS1110DR Datasheet PDF
- Category
- Integrated Circuit
- Temp Range
- ?°C to 150.0°C
- RoHS
- Compliant
- Lead Time
- 3–7 business days
- Shipping
- DHL Express · Worldwide
Key Features
- Logic-level compatible gate drive enables direct control from 3.3 V or 5 V MCU outputs without additional level-shifting circuitry
- Ultra-low 75 mΩ drain-source on-resistance minimizes conduction losses in 6 A load switching applications
- Integrated built-in diode provides freewheeling path for inductive loads, reducing external component count
Applications
The TPS1110DR is used in portable battery-powered equipment for load switching and reverse battery protection, leveraging its logic-level gate compatibility with microcontrollers. It suits power management in USB power delivery and hot-swap circuits where low RDS(on) reduces thermal dissipation at up to 6 A. The device also applies to motor drive pre-stages and relay replacement circuits in industrial and consumer electronics.
Specifications
| Pbfree Code | No |
| YTEOL | 0 |
| Additional Feature | LOGIC LEVEL COMPATIBLE |
| Configuration | SINGLE WITH BUILT-IN DIODE |
| DS Breakdown Voltage-Min | 7V |
| Drain Current-Max (ID) | 6A |
| Drain-source On Resistance-Max | 0.075Ω |
| FET Technology | METAL-OXIDE SEMICONDUCTOR |
| JEDEC-95 Code | MS-012AA |
| JESD-30 Code | R-PDSO-G8 |
| Number of Elements | 1 |
| Operating Mode | ENHANCEMENT MODE |
| Package Body Material | PLASTIC/EPOXY |
| Package Shape | RECTANGULAR |
| Package Style | SMALL OUTLINE |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED |
| Polarity/Channel Type | P-CHANNEL |
| Power Dissipation-Max (Abs) | 1.3W |
| Pulsed Drain Current-Max (IDM) | 24A |
| Qualification Status | Not Qualified |
| Surface Mount | YES |
| Terminal Form | GULL WING |
| Terminal Position | DUAL |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
| Transistor Application | SWITCHING |
| Transistor Element Material | SILICON |
| Turn-off Time-Max (toff) | 36ns |
| Turn-on Time-Max (ton) | 37ns |
| Package | Small Outline Packages |
Compliance & Regulatory
| RoHS Status | Compliant |
| Lead-Free | Yes (Pb-Free) |
| ECCN | EAR99 |
Alternate & Equivalent Parts
Compatible alternatives and drop-in replacements for TPS1110DR:
Power Field-Effect Transistor, 6A I(D), 7V, 0.075ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA
Frequently Asked Questions
What is the maximum drain current for the TPS1110DR?
The TPS1110DR supports a maximum drain current of 6 A, with a drain-source on-resistance of 75 mΩ maximum, making it suitable for moderate-power load switching and power distribution applications.
Is the TPS1110DR compatible with 3.3 V logic outputs?
Yes, the TPS1110DR features logic-level compatible gate drive, allowing direct interface with 3.3 V or 5 V microcontroller GPIO pins without needing additional gate driver or level-shifting ICs.
What package does the TPS1110DR come in?
The TPS1110DR is available in an 8-pin SOIC (R-PDSO-G8, MS-012AA) package, which is a standard small outline IC footprint widely supported in automated SMD assembly and rework processes.
Does the TPS1110DR include a built-in protection diode?
Yes, the TPS1110DR includes a built-in body diode in a single-with-built-in-diode configuration, which provides a freewheeling current path for inductive loads and protects against voltage spikes during switching.
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About Texas Instruments
Texas Instruments (TI) is a global semiconductor company headquartered in Dallas, Texas. TI designs and manufactures analog and embedded processing chips used in industrial, automotive, consumer, communications, and enterprise systems.
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