TPS1110DR Texas Instruments Integrated Circuit (Small Outline Packages) In Stock
The TPS1110DR is a logic-level compatible N-channel MOSFET power switch with built-in diode, 6 A drain current, and 75 mΩ on-resistance in an 8-pin SOIC package. Features 7 V minimum breakdown voltage for robust load switching in 5 V systems. From $1.80 in stock worldwide shipping.
- Manufacturer
- Texas Instruments
- Package
- Small Outline Packages
- Pin Count
- 8
- Lifecycle
- OBSOLETE
- Datasheet
- TPS1110DR Datasheet PDF
- Category
- Integrated Circuit
- Temp Range
- ?°C to 150.0°C
- RoHS
- Compliant
- Lead Time
- 3–7 business days
- Shipping
- DHL Express · Worldwide
What are the key features of TPS1110DR?
- Logic-level compatible gate drive enables direct control from 3.3 V or 5 V MCU outputs without additional level-shifting circuitry
- Ultra-low 75 mΩ drain-source on-resistance minimizes conduction losses in 6 A load switching applications
- Integrated built-in diode provides freewheeling path for inductive loads, reducing external component count
What is TPS1110DR used for?
The TPS1110DR is used in portable battery-powered equipment for load switching and reverse battery protection, leveraging its logic-level gate compatibility with microcontrollers. It suits power management in USB power delivery and hot-swap circuits where low RDS(on) reduces thermal dissipation at up to 6 A. The device also applies to motor drive pre-stages and relay replacement circuits in industrial and consumer electronics.
What are the specifications of TPS1110DR?
| Pbfree Code | No |
| YTEOL | 0 |
| Additional Feature | LOGIC LEVEL COMPATIBLE |
| Configuration | SINGLE WITH BUILT-IN DIODE |
| DS Breakdown Voltage-Min | 7V |
| Drain Current-Max (ID) | 6A |
| Drain-source On Resistance-Max | 0.075Ω |
| FET Technology | METAL-OXIDE SEMICONDUCTOR |
| JEDEC-95 Code | MS-012AA |
| JESD-30 Code | R-PDSO-G8 |
| Number of Elements | 1 |
| Operating Mode | ENHANCEMENT MODE |
| Package Body Material | PLASTIC/EPOXY |
| Package Shape | RECTANGULAR |
| Package Style | SMALL OUTLINE |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED |
| Polarity/Channel Type | P-CHANNEL |
| Power Dissipation-Max (Abs) | 1.3W |
| Pulsed Drain Current-Max (IDM) | 24A |
| Qualification Status | Not Qualified |
| Surface Mount | YES |
| Terminal Form | GULL WING |
| Terminal Position | DUAL |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
| Transistor Application | SWITCHING |
| Transistor Element Material | SILICON |
| Turn-off Time-Max (toff) | 36ns |
| Turn-on Time-Max (ton) | 37ns |
| Package | Small Outline Packages |
Compliance & Regulatory
| RoHS Status | Compliant |
| Lead-Free | Yes (Pb-Free) |
| ECCN | EAR99 |
Where can I find the TPS1110DR datasheet?
TPS1110DR Datasheet DownloadOfficial datasheet from Texas Instruments
What are equivalent replacements for TPS1110DR?
Compatible alternatives and drop-in replacements for TPS1110DR:
Power Field-Effect Transistor, 6A I(D), 7V, 0.075ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA
Frequently Asked Questions
How should power designers check TPS1110DR load capability?
Confirm that steady-state and transient drain current remain within the documented 6 A limit while thermal rise and switching losses stay acceptable.
Which voltage condition is important when qualifying TPS1110DR?
The design must respect the documented 7 V minimum breakdown rating and evaluate all supply tolerances and switching transients against that margin.
For PCB implementation, what should engineers verify for TPS1110DR?
Use the official Texas Instruments land pattern for all 8 pins, with short power paths and thermal copper appropriate for the expected current.
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About Texas Instruments
Texas Instruments (TI) is a global semiconductor company headquartered in Dallas, Texas. TI designs and manufactures analog and embedded processing chips used in industrial, automotive, consumer, communications, and enterprise systems.
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