TP5322K1-G Microchip Integrated Circuit (SOT23 (3-Pin)) In Stock
The TP5322K1-G is a logic-level compatible N-channel MOSFET in a SOT-23-3 package, rated at 220V breakdown voltage with 12Ω on-resistance and 0.12A drain current. It features a built-in diode for flyback protection in compact switching circuits. From $0.30 in stock with worldwide shipping.
- Manufacturer
- Microchip
- Package
- SOT23 (3-Pin)
- Pin Count
- 3
- Lifecycle
- ACTIVE
- Datasheet
- TP5322K1-G Datasheet PDF
- Category
- Integrated Circuit
- Price
- From $0.3106(MOQ 1)
- Temp Range
- -55.0°C to 150.0°C
- RoHS
- Compliant
- Lead Time
- 3–7 business days
- Shipping
- DHL Express · Worldwide
Key Features
- 220V drain-source breakdown voltage with 12Ω RDS(on) and built-in freewheeling diode enabling safe high-voltage switching in a minimal SOT-23-3 footprint
- Logic-level gate drive compatibility allows direct microcontroller or DSP GPIO control at 3.3V to 5V without a separate gate driver IC
- Ultra-compact SOT-23-3 package with 20 pF Crss feedback capacitance for fast switching in space-constrained 100V to 220V auxiliary power stages
Applications
The TP5322K1-G is suited for low-current high-voltage switching applications such as offline auxiliary power supply control, small relay drivers, and LED string switching in luminaires rated up to 220 V. Its logic-level gate threshold enables direct 3.3 V or 5 V MCU-GPIO drive without a dedicated gate driver, simplifying BOM in smart lighting and home appliance control boards. The integrated body diode provides built-in flyback protection when driving inductive loads at up to 220 V rails.
Specifications
| Manufacturer Package Code | SOT-23-3 |
| Factory Lead Time | 6Weeks |
| YTEOL | 8 |
| Additional Feature | LOGIC LEVEL COMPATIBLE |
| Configuration | SINGLE WITH BUILT-IN DIODE |
| DS Breakdown Voltage-Min | 220V |
| Drain Current-Max (ID) | 0.12A |
| Drain-source On Resistance-Max | 12Ω |
| FET Technology | METAL-OXIDE SEMICONDUCTOR |
| Feedback Cap-Max (Crss) | 20pF |
| JEDEC-95 Code | TO-236AB |
| JESD-30 Code | R-PDSO-G3 |
| JESD-609 Code | e3 |
| Number of Elements | 1 |
| Operating Mode | ENHANCEMENT MODE |
| Package Body Material | PLASTIC/EPOXY |
| Package Shape | RECTANGULAR |
| Package Style | SMALL OUTLINE |
| Peak Reflow Temperature (Cel) | 260 |
| Polarity/Channel Type | P-CHANNEL |
| Power Dissipation Ambient-Max | 0.36W |
| Power Dissipation-Max (Abs) | 0.36W |
| Qualification Status | Not Qualified |
| Surface Mount | YES |
| Terminal Finish | Matte Tin (Sn) |
| Terminal Form | GULL WING |
| Terminal Position | DUAL |
| Time@Peak Reflow Temperature-Max (s) | 40 |
| Transistor Application | SWITCHING |
| Transistor Element Material | SILICON |
| Package | SOT23 (3-Pin) |
Compliance & Regulatory
| RoHS Status | Compliant |
| Lead-Free | Yes (Pb-Free) |
| Moisture Sensitivity Level | MSL 1 |
| ECCN | EAR99 |
| HTS Code | 8541.29.00.95 |
| Country of Origin | Thailand |
Alternate & Equivalent Parts
No known alternates. Submit an RFQ and our team can suggest alternatives.
Frequently Asked Questions
Can a 3.3V MCU GPIO directly drive the TP5322K1-G gate without a gate driver IC?
Yes, the TP5322K1-G is logic-level compatible with a gate threshold voltage low enough to achieve full enhancement at 3.3 V to 5 V gate drive. At 5 V VGS the device turns on with an RDS(on) of 12Ω, allowing 0.12 A drain current at 220 V maximum VDS. This eliminates the need for a separate gate driver in low-frequency (<100 kHz) switching applications powered from 3.3 V or 5 V MCU supply rails.
What load types benefit from the built-in diode in the TP5322K1-G?
The TP5322K1-G's built-in body diode acts as a freewheeling diode when switching inductive loads such as relay coils, small solenoids, or DC motor windings rated below 0.12 A at up to 220 V. It clamps reverse voltage transients during turn-off without requiring an external flyback diode, reducing component count by 1 part and shrinking PCB area in compact appliance control circuits.
How does the TP5322K1-G's 12Ω on-resistance affect power dissipation at maximum rated current?
At the maximum drain current of 0.12 A, the TP5322K1-G dissipates approximately 1.7 mW of conduction loss (P = I² × RDS(on) = 0.0144 × 12 Ω). The SOT-23-3 package with typical thermal resistance of around 300°C/W keeps junction temperature well below the rated limit at this current level, so no heatsinking is required for continuous 0.12 A operation in 25°C ambient conditions.
Which high-voltage compact switch designs are best served by the TP5322K1-G over a TO-92 discrete MOSFET?
The SOT-23-3 package of the TP5322K1-G occupies roughly 1.6 mm × 2.9 mm, less than one-third the footprint of a TO-92 device. For 220 V auxiliary rails in smart meter PCBs, LED driver boards, or IoT relay modules where board space is at a premium and drain current stays below 0.12 A, the TP5322K1-G offers identical 220 V blocking capability with significant area savings and surface-mount assembly compatibility.
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| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 1+ | $0.7500 | $0.75 |
| 4+ | $0.3106 | $1.24 |
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