TN5335K1-G Microchip MOSFET (N-Channel) (SOT23 (3-Pin)) In Stock
Microchip TN5335K1-G is a single N-channel MOSFET with built-in diode in a compact SOT-23 3-pin package. It features a 350 V drain-source breakdown voltage, 0.11 A maximum drain current, and 15 Ω on-resistance. Available from stock with worldwide shipping.
- Manufacturer
- Microchip
- Package
- SOT23 (3-Pin)
- Pin Count
- 3
- Lifecycle
- ACTIVE
- Datasheet
- TN5335K1-G Datasheet PDF
- Category
- MOSFET (N-Channel)
- Temp Range
- -55.0°C to 150.0°C
- RoHS
- Compliant
- Lead Time
- 3–7 business days
- Shipping
- DHL Express · Worldwide
Key Features
- 350 V drain-source breakdown voltage suits high-voltage switching applications
- Ultra-compact SOT-23 3-pin package saves board space in space-constrained designs
- Built-in diode eliminates external flyback diode and simplifies circuit design
- 15 Ω maximum drain-source on-resistance supports efficient low-current switching
- 22 pF maximum feedback capacitance (Crss) for fast switching transitions
Applications
The TN5335K1-G is well suited for high-voltage low-current switching circuits such as LED drivers, small motor controls, and power management modules operating up to 350 V. Its built-in diode and SOT-23 package make it an ideal choice for space-constrained designs in consumer electronics and industrial controls. The device is also used in isolated gate-drive auxiliary supplies and relay-driver stages where compact footprint and robustness are priorities.
Specifications
| Manufacturer Package Code | SOT-23-3 |
| YTEOL | 8 |
| Configuration | SINGLE WITH BUILT-IN DIODE |
| DS Breakdown Voltage-Min | 350V |
| Drain Current-Max (ID) | 0.11A |
| Drain-source On Resistance-Max | 15Ω |
| FET Technology | METAL-OXIDE SEMICONDUCTOR |
| Feedback Cap-Max (Crss) | 22pF |
| JEDEC-95 Code | TO-236AB |
| JESD-30 Code | R-PDSO-G3 |
| JESD-609 Code | e3 |
| Number of Elements | 1 |
| Operating Mode | ENHANCEMENT MODE |
| Package Body Material | PLASTIC/EPOXY |
| Package Shape | RECTANGULAR |
| Package Style | SMALL OUTLINE |
| Peak Reflow Temperature (Cel) | 260 |
| Polarity/Channel Type | N-CHANNEL |
| Power Dissipation Ambient-Max | 0.36W |
| Power Dissipation-Max (Abs) | 0.36W |
| Qualification Status | Not Qualified |
| Surface Mount | YES |
| Terminal Finish | Matte Tin (Sn) |
| Terminal Form | GULL WING |
| Terminal Position | DUAL |
| Transistor Application | SWITCHING |
| Transistor Element Material | SILICON |
| Package | SOT23 (3-Pin) |
Compliance & Regulatory
| RoHS Status | Compliant |
| Lead-Free | Yes (Pb-Free) |
| Moisture Sensitivity Level | MSL 1 |
| ECCN | EAR99 |
| HTS Code | 8541.29.00.95 |
| Country of Origin | Thailand |
Alternate & Equivalent Parts
No known alternates. Submit an RFQ and our team can suggest alternatives.
Frequently Asked Questions
What is the maximum drain-source breakdown voltage of the TN5335K1-G?
The TN5335K1-G supports a minimum drain-source breakdown voltage of 350 V, making it suitable for high-voltage switching applications such as LED driver circuits and isolated power supplies operating well above typical 5 V or 12 V logic rails.
How does the built-in diode in TN5335K1-G simplify circuit design?
The TN5335K1-G integrates a built-in freewheeling diode, which eliminates the need for an external Schottky or rectifier diode in inductive-load switching circuits. This reduces component count, saves board space in the SOT-23 3-pin footprint, and lowers overall BOM cost for designs switching up to 0.11 A at 350 V.
For a compact LED driver board, is the TN5335K1-G drain current of 0.11 A sufficient?
The 0.11 A maximum drain current rating of the TN5335K1-G is adequate for driving single high-brightness LEDs or small-signal loads up to 350 V. Its SOT-23 3-pin package occupies minimal board space, and the 15 Ω on-resistance at low currents results in manageable conduction losses under typical LED driver operating conditions.
What alternative Microchip MOSFETs should be considered if the 0.11 A current rating of TN5335K1-G is insufficient?
If the 0.11 A current limit of the TN5335K1-G is too restrictive, designers should evaluate higher-current Microchip N-channel MOSFETs in similar SOT-23 or SOT-223 packages with the same 350 V voltage class but with drain currents of 0.5 A or more. The tradeoff typically involves a larger package footprint or higher gate-charge requirements.
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