TN5325K1-G Microchip Integrated Circuit (SOT23 (3-Pin)) In Stock
TN5325K1-G is a logic-level N-channel MOSFET rated at 250 V drain-source breakdown and 150 mA drain current in a 3-pin SOT-23 package. Features 7 Ω maximum on-resistance, low threshold voltage, and a built-in body diode. From $0.45 in stock with worldwide shipping.
- Manufacturer
- Microchip
- Package
- SOT23 (3-Pin)
- Pin Count
- 3
- Lifecycle
- ACTIVE
- Datasheet
- TN5325K1-G Datasheet PDF
- Category
- Integrated Circuit
- Price
- From $0.2876(MOQ 1)
- Temp Range
- -55.0°C to 150.0°C
- RoHS
- Compliant
- Lead Time
- 3–7 business days
- Shipping
- DHL Express · Worldwide
What are the key features of TN5325K1-G?
- 250 V drain-source breakdown voltage with logic-level compatible gate threshold for direct MCU GPIO drive
- 7 Ω maximum drain-source on-resistance at 150 mA continuous drain current in a compact 3-pin SOT-23 package
- Single N-channel MOSFET with integrated body diode and 23 pF maximum feedback capacitance for clean high-voltage switching
What is TN5325K1-G used for?
TN5325K1-G is suited for high-voltage low-side switching applications such as LED driver circuits, relay coil drivers, and small motor switches operating from supplies up to 250 V. Its logic-level gate threshold enables direct drive from 3.3 V or 5 V MCU outputs without a separate gate driver, making it ideal for compact power switch designs in appliance controls and industrial field I/O modules.
What are the specifications of TN5325K1-G?
| Manufacturer Package Code | SOT-23-3 |
| Factory Lead Time | 5Weeks |
| YTEOL | 8 |
| Additional Feature | LOGIC LEVEL COMPATIBLE, HIGH INPUT IMPEDANCE, LOW THRESHOLD |
| Configuration | SINGLE WITH BUILT-IN DIODE |
| DS Breakdown Voltage-Min | 250V |
| Drain Current-Max (ID) | 0.15A |
| Drain-source On Resistance-Max | 7Ω |
| FET Technology | METAL-OXIDE SEMICONDUCTOR |
| Feedback Cap-Max (Crss) | 23pF |
| JEDEC-95 Code | TO-236AB |
| JESD-30 Code | R-PDSO-G3 |
| JESD-609 Code | e3 |
| Number of Elements | 1 |
| Operating Mode | ENHANCEMENT MODE |
| Package Body Material | PLASTIC/EPOXY |
| Package Shape | RECTANGULAR |
| Package Style | SMALL OUTLINE |
| Peak Reflow Temperature (Cel) | 260 |
| Polarity/Channel Type | N-CHANNEL |
| Power Dissipation Ambient-Max | 0.36W |
| Power Dissipation-Max (Abs) | 0.36W |
| Qualification Status | Not Qualified |
| Reference Standard | TS 16949 |
| Surface Mount | YES |
| Terminal Finish | Matte Tin (Sn) |
| Terminal Form | GULL WING |
| Terminal Position | DUAL |
| Time@Peak Reflow Temperature-Max (s) | 40 |
| Transistor Application | SWITCHING |
| Transistor Element Material | SILICON |
| Package | SOT23 (3-Pin) |
Compliance & Regulatory
| RoHS Status | Compliant |
| Lead-Free | Yes (Pb-Free) |
| Moisture Sensitivity Level | MSL 1 |
| ECCN | EAR99 |
| HTS Code | 8541.29.00.95 |
| Country of Origin | Thailand |
Where can I find the TN5325K1-G datasheet?
TN5325K1-G Datasheet DownloadOfficial datasheet from Microchip
What are equivalent replacements for TN5325K1-G?
No known alternates. Submit an RFQ and our team can suggest alternatives.
Frequently Asked Questions
Can a 3.3 V MCU GPIO directly drive TN5325K1-G without an additional gate driver IC?
Yes. TN5325K1-G is specified as logic-level compatible with a low gate threshold, typically turning on fully at gate-source voltages of 2 V to 3 V. At 3.3 V drive from a standard MCU GPIO, the device achieves its datasheet on-resistance of 7 Ω maximum at 150 mA drain current, eliminating the need for a discrete gate driver and reducing BOM by one component.
What continuous power can TN5325K1-G dissipate in a SOT-23 package at 25°C ambient?
TN5325K1-G is rated for 0.36 W maximum power dissipation in the SOT-23 package at 25°C ambient with standard PCB mounting. At 150 mA drain current through 7 Ω on-resistance, the device dissipates approximately 157 mW (I² × RDS(on)), which is well within the 360 mW limit, and the junction temperature remains below its 150°C maximum rating on a standard 1 oz copper PCB.
How does TN5325K1-G's 250 V rating make it useful for offline AC-derived supply rails?
Offline rectified supplies from 100 V to 240 V AC produce DC bus voltages of 140 V to 340 V peak. TN5325K1-G's 250 V drain-source breakdown places it comfortably above 100 VAC rectified peaks (~141 V) with adequate margin. This makes it usable as a low-side switch for small loads such as optocoupler LED drivers, relay coils under 5 W, or fan-speed sense circuits referenced to an AC rectified rail.
How does the built-in body diode of TN5325K1-G benefit inductive load switching designs?
When TN5325K1-G switches off an inductive load such as a relay coil or small motor winding, the built-in body diode conducts the inductive flyback current, clamping the drain voltage spike. This eliminates the need for an external freewheeling diode in most designs, saving one component and approximately 3 mm² of PCB area. The feedback capacitance of 23 pF maximum keeps switching losses low at frequencies up to 100 kHz.
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More from Microchip
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 1+ | $0.6800 | $0.68 |
| 4+ | $0.2876 | $1.15 |
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