TN2124K1-G Microchip MOSFET (N-Channel) (SOT23 (3-Pin)) In Stock
The TN2124K1-G is an N-channel MOSFET rated at 240V drain-source breakdown, 0.134A drain current, and 15Ω on-resistance. Low-threshold gate drive simplifies logic-level switching up to 150°C. Available in SOT-23-3 package with worldwide stock and shipping.
- Manufacturer
- Microchip
- Package
- SOT23 (3-Pin)
- Pin Count
- 3
- Lifecycle
- ACTIVE
- Datasheet
- TN2124K1-G Datasheet PDF
- Category
- MOSFET (N-Channel)
- Price
- From $0.3796(MOQ 1)
- Temp Range
- -55.0°C to 150.0°C
- RoHS
- Compliant
- Lead Time
- 3–7 business days
- Shipping
- DHL Express · Worldwide
Key Features
- 240V DS breakdown voltage handles high-voltage lighting and AC line switch applications
- Low threshold voltage for direct logic-level gate drive without extra drive circuitry
- Ultra-compact SOT-23-3 package with only 5 pF feedback capacitance for fast switching
- Built-in drain-source diode eliminates the need for an external freewheeling diode
Applications
The TN2124K1-G is well suited for high-voltage low-current switching tasks such as TRIAC and relay gate drivers, offline LED lighting controls, and power supply bias circuits operating up to 240 V. Its low gate threshold enables direct drive from 3.3 V or 5 V microcontroller GPIOs without a dedicated gate driver IC, simplifying circuit design. The SOT-23-3 package makes it a practical choice for compact line-voltage switch circuits in smart home devices and industrial sensor interfaces.
Specifications
| Manufacturer Package Code | SOT-23-3 |
| Factory Lead Time | 5Weeks |
| YTEOL | 9 |
| Additional Feature | LOW THRESHOLD |
| Configuration | SINGLE WITH BUILT-IN DIODE |
| DS Breakdown Voltage-Min | 240V |
| Drain Current-Max (ID) | 0.134A |
| Drain-source On Resistance-Max | 15Ω |
| FET Technology | METAL-OXIDE SEMICONDUCTOR |
| Feedback Cap-Max (Crss) | 5pF |
| JEDEC-95 Code | TO-236AB |
| JESD-30 Code | R-PDSO-G3 |
| JESD-609 Code | e3 |
| Number of Elements | 1 |
| Operating Mode | ENHANCEMENT MODE |
| Package Body Material | PLASTIC/EPOXY |
| Package Shape | RECTANGULAR |
| Package Style | SMALL OUTLINE |
| Peak Reflow Temperature (Cel) | 260 |
| Polarity/Channel Type | N-CHANNEL |
| Power Dissipation Ambient-Max | 0.36W |
| Power Dissipation-Max (Abs) | 0.36W |
| Qualification Status | Not Qualified |
| Reference Standard | TS 16949 |
| Surface Mount | YES |
| Terminal Finish | Matte Tin (Sn) |
| Terminal Form | GULL WING |
| Terminal Position | DUAL |
| Time@Peak Reflow Temperature-Max (s) | 40 |
| Transistor Application | SWITCHING |
| Transistor Element Material | SILICON |
| Package | SOT23 (3-Pin) |
Compliance & Regulatory
| RoHS Status | Compliant |
| Lead-Free | Yes (Pb-Free) |
| Moisture Sensitivity Level | MSL 1 |
| ECCN | EAR99 |
| HTS Code | 8541.29.00.95 |
| Country of Origin | Thailand |
Alternate & Equivalent Parts
No known alternates. Submit an RFQ and our team can suggest alternatives.
Frequently Asked Questions
How does the 240V breakdown rating of the TN2124K1-G make it suitable for offline power supply circuits?
With a minimum drain-source breakdown voltage of 240 V and a maximum on-resistance of 15 Ω, the TN2124K1-G can block rectified mains voltage up to 170 V peak on a 120 VAC line while passing up to 134 mA continuous drain current. This makes it practical for start-up bias supplies, housekeeping rails, and snubber switch circuits in offline flyback converters rated up to 30 W.
Can the TN2124K1-G be driven directly from a 3.3V microcontroller GPIO without a gate driver?
Yes. The TN2124K1-G features a low gate threshold voltage, typically around 1.5 V to 2.5 V, allowing a 3.3 V GPIO to drive it fully into conduction at drain currents up to 134 mA. Its 5 pF feedback capacitance (Crss) ensures fast switching transitions even with the limited source current of standard GPIO output drivers, keeping switching losses low at frequencies up to several hundred kHz.
What is the power dissipation limit of the TN2124K1-G in a SOT-23-3 package at elevated ambient temperatures?
The TN2124K1-G has a maximum power dissipation of 0.36 W at 25°C ambient in the SOT-23-3 package. At an ambient temperature of 85°C—common in enclosed industrial enclosures—the derated power dissipation drops to approximately 0.20 W, limiting the maximum on-state current at 15 Ω on-resistance to roughly 115 mA. Adequate PCB copper area helps reduce thermal resistance to ambient.
How does the built-in drain-source diode in the TN2124K1-G simplify inductive load switching circuits?
The integrated body diode conducts inductive kickback current when the gate turns off, protecting the MOSFET from voltage spikes without an external Schottky or snubber diode in many low-energy applications. For solenoid or small relay coil drivers switching at up to 134 mA with inductance below 1 mH, the built-in diode typically handles recovery without additional components, reducing BOM by 1 part per switch.
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| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 1+ | $0.7080 | $0.71 |
| 4+ | $0.3796 | $1.52 |
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