TMS4C1024-80N Texas Instruments Integrated Circuit (Dual-In-Line Packages) In Stock
TMS4C1024-80N is a 1 Mbit Fast Page Mode DRAM from Texas Instruments with a maximum access time of 80 ns and a 1-bit wide data bus. It supports RAS-only, CAS-before-RAS, and hidden refresh modes in an 18-pin DIP package. Available in stock worldwide for legacy system maintenance and vintage computer repair.
- Manufacturer
- Texas Instruments
- Package
- Dual-In-Line Packages
- Pin Count
- 18
- Lifecycle
- OBSOLETE
- Datasheet
- TMS4C1024-80N Datasheet PDF
- Category
- Integrated Circuit
- Temp Range
- ?°C to 70.0°C
- RoHS
- Compliant
- Lead Time
- 3–7 business days
- Shipping
- DHL Express · Worldwide
Key Features
- 1 Mbit (1,048,576-bit) Fast Page Mode DRAM with 80 ns maximum access time enables reliable memory expansion in vintage 8-bit and 16-bit computer systems
- Supports RAS-only refresh, CAS-before-RAS, and hidden refresh modes, providing flexible DRAM controller compatibility with legacy chipsets
- 18-pin DIP package allows direct through-hole mounting and easy socket replacement for maintenance of legacy industrial and consumer electronics
Applications
The TMS4C1024-80N is primarily used for maintenance and restoration of legacy 8-bit and 16-bit computer systems and industrial controllers from the 1980s and early 1990s that relied on 1 Mbit Fast Page Mode DRAM organized as 1 M x 1 bit. Retro computing enthusiasts and industrial repair technicians source this device to replace failed DRAM chips in original PCB designs where the 18-pin DIP footprint and 80 ns access time are required for compatibility. It also serves as a reference component for educational projects demonstrating classic DRAM refresh and multiplexed address bus architectures.
Specifications
| Pbfree Code | No |
| YTEOL | 0 |
| Access Mode | FAST PAGE |
| Access Time-Max | 80ns |
| Additional Feature | RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH |
| I/O Type | SEPARATE |
| JESD-30 Code | R-PDIP-T18 |
| Memory Density | 1048576bit |
| Memory IC Type | FAST PAGE DRAM |
| Memory Width | 1 |
| Number of Functions | 1 |
| Number of Ports | 1 |
| Number of Words | 1048576words |
| Number of Words Code | 1000000 |
| Operating Mode | ASYNCHRONOUS |
| Organization | 1MX1 |
| Output Characteristics | 3-STATE |
| Package Body Material | PLASTIC/EPOXY |
| Package Equivalence Code | DIP18,.3 |
| Package Shape | RECTANGULAR |
| Package Style | IN-LINE |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED |
| Qualification Status | Not Qualified |
| Refresh Cycles | 512 |
| Standby Current-Max | 0.002A |
| Supply Current-Max | 0.075mA |
| Supply Voltage-Max (Vsup) | 5.5V |
| Supply Voltage-Min (Vsup) | 4.5V |
| Supply Voltage-Nom (Vsup) | 5V |
| Surface Mount | NO |
| Technology | CMOS |
| Temperature Grade | COMMERCIAL |
| Terminal Form | THROUGH-HOLE |
| Terminal Pitch | 2.54mm |
| Terminal Position | DUAL |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
| Package | Dual-In-Line Packages |
Compliance & Regulatory
| RoHS Status | Compliant |
| Lead-Free | Yes (Pb-Free) |
| ECCN | EAR99 |
| HTS Code | 8542.32.00.02 |
Alternate & Equivalent Parts
No known alternates. Submit an RFQ and our team can suggest alternatives.
Frequently Asked Questions
What is the memory density and organization of the TMS4C1024-80N?
The TMS4C1024-80N provides 1,048,576 bits of storage organized as 1 M x 1 bit, meaning each address selects a single bit. To build an 8-bit wide memory bank, designers connect 8 of these devices in parallel on the same address and control bus, producing a 1 MB byte-wide array from 8 chips, each contributing 1 bit per address location.
What refresh modes does the TMS4C1024-80N support and how do they affect controller design?
The TMS4C1024-80N supports RAS-only refresh, CAS-before-RAS refresh, and hidden refresh modes. CAS-before-RAS allows a single external RAS cycle to internally generate the refresh address, reducing the complexity of the DRAM controller by eliminating the need for a separate refresh address counter in simple 8-bit microcomputer designs from the 1980s.
How does the 80 ns maximum access time of the TMS4C1024-80N affect compatibility with vintage CPU bus speeds?
At 80 ns maximum access time, the TMS4C1024-80N is compatible with 8 MHz and 10 MHz processor buses common in classic 8086, 68000, and Z80 systems, which typically require DRAM access within 100 ns to 120 ns per bus cycle. Systems with 12 MHz or faster buses may require faster-rated DRAM (e.g., 70 ns devices) or additional wait states to meet setup and hold timing at the memory interface.
In which legacy boards can the TMS4C1024-80N replace a failed DRAM chip directly?
The TMS4C1024-80N is a direct socket replacement for other 18-pin Fast Page Mode 1 Mx1 DRAMs such as the TMS4464, NEC uPD41264, and equivalent parts used in IBM PC/XT expansion cards, Apple II memory boards, and early industrial PLC memory modules. Provided the replacement device matches or beats the 80 ns access time specification and uses the standard 18-pin PDIP pinout, it inserts without any circuit modification.
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About Texas Instruments
Texas Instruments (TI) is a global semiconductor company headquartered in Dallas, Texas. TI designs and manufactures analog and embedded processing chips used in industrial, automotive, consumer, communications, and enterprise systems.
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