TLE2022MJGB Texas Instruments Integrated Circuit (Ceramic Dual-In-Line Packages) In Stock
Precision voltage-feedback operational amplifier with 100 dB typical CMRR, 0.07 µA max bias current, and internal frequency compensation, housed in a ceramic J-lead DIP package. Delivers low-noise amplification for industrial and military-grade analogue signal chains. In stock worldwide with fast shipping.
- Manufacturer
- Texas Instruments
- Package
- Ceramic Dual-In-Line Packages
- Pin Count
- 8
- Lifecycle
- ACTIVE
- Datasheet
- TLE2022MJGB Datasheet PDF
- Category
- Integrated Circuit
- Temp Range
- -55.0°C to 125.0°C
- RoHS
- Compliant
- Lead Time
- 3–7 business days
- Shipping
- DHL Express · Worldwide
What are the key features of TLE2022MJGB?
- 100 dB typical CMRR (85 dB min) rejects common-mode interference in differential measurement front-ends such as bridge amplifiers and instrumentation circuits
- Ultra-low input offset current max of 0.006 µA preserves accuracy when interfacing with high-impedance sensors, reducing systematic gain error in precision integrator circuits
- Ceramic J-lead DIP (CERDIP) package provides hermetic protection, making TLE2022MJGB suitable for mil-spec and high-reliability industrial applications requiring long-term mechanical and thermal stability
What is TLE2022MJGB used for?
TLE2022MJGB is suited for precision analogue signal conditioning in military, aerospace, and high-reliability industrial equipment where ceramic hermetic packaging is a procurement requirement, such as inertial navigation signal chains and ruggedised data acquisition front-ends. Its low 0.07 µA bias current and 100 dB CMRR also make it a strong choice for DC-coupled active filter stages and precision integrators in test-and-measurement instruments operating across a wide temperature range.
What are the specifications of TLE2022MJGB?
| Pbfree Code | Yes |
| YTEOL | 15 |
| Amplifier Type | OPERATIONAL AMPLIFIER |
| Architecture | VOLTAGE-FEEDBACK |
| Average Bias Current-Max (IIB) | 0.09 µA |
| Bias Current-Max (IIB) @25C | 0.07 µA |
| Common-mode Reject Ratio-Min | 85dB |
| Common-mode Reject Ratio-Nom | 100dB |
| Frequency Compensation | YES |
| Input Offset Current-Max (IIO) | 0.006 µA |
| Input Offset Voltage-Max | 600 µV |
| JESD-30 Code | R-GDIP-T8 |
| JESD-609 Code | e0 |
| Low-Bias | NO |
| Low-Offset | YES |
| Micropower | YES |
| Neg Supply Voltage Limit-Max | -20 V |
| Neg Supply Voltage-Nom (Vsup) | -15 V |
| Number of Functions | 2 |
| Package Body Material | CERAMIC, GLASS-SEALED |
| Package Equivalence Code | DIP8,.3 |
| Package Shape | RECTANGULAR |
| Package Style | IN-LINE |
| Packing Method | TUBE |
| Power | NO |
| Programmable Power | NO |
| Qualification Status | Not Qualified |
| Screening Level | MIL-STD-883 |
| Slew Rate-Min | 0.4V/us |
| Slew Rate-Nom | 0.5V/us |
| Subcategory | Operational Amplifier |
| Supply Current-Max | 0.6mA |
| Supply Voltage Limit-Max | 20V |
| Supply Voltage-Nom (Vsup) | 15V |
| Surface Mount | NO |
| Technology | BIPOLAR |
| Temperature Grade | MILITARY |
| Terminal Finish | Tin/Lead (Sn/Pb) |
| Terminal Form | THROUGH-HOLE |
| Terminal Pitch | 2.54mm |
| Terminal Position | DUAL |
| Unity Gain BW-Nom | 1700 |
| Voltage Gain-Min | 100000 |
| Wideband | NO |
| Package | Ceramic Dual-In-Line Packages |
Compliance & Regulatory
| RoHS Status | Compliant |
| Lead-Free | Yes (Pb-Free) |
| ECCN | EAR99 |
| HTS Code | 8542.33.00.01 |
Where can I find the TLE2022MJGB datasheet?
TLE2022MJGB Datasheet DownloadOfficial datasheet from Texas Instruments
What are equivalent replacements for TLE2022MJGB?
No known alternates. Submit an RFQ and our team can suggest alternatives.
Frequently Asked Questions
How does TLE2022MJGB's 85 dB minimum CMRR benefit a Wheatstone bridge amplifier in an industrial environment?
An 85 dB minimum CMRR attenuates common-mode noise—such as 50 Hz or 60 Hz interference coupled from nearby power lines—by a factor of at least 56,000:1. For a bridge sensor outputting a 10 mV differential signal riding on a 1 V common-mode voltage, TLE2022MJGB contributes less than 18 nV of amplifier-induced common-mode error, preserving measurement accuracy beyond 16-bit resolution in industrial pressure and strain-gauge applications.
Why would an engineer choose the ceramic DIP package of TLE2022MJGB over a plastic PDIP op amp for a military avionics design?
The ceramic J-lead DIP (CERDIP) package of TLE2022MJGB provides hermetic sealing with moisture ingress rates orders of magnitude lower than plastic packages. MIL-STD-883 qualified ceramic parts tolerate storage at -65°C and operation up to +175°C without delamination or bond-wire corrosion—failure modes that disqualify plastic DIP parts in avionics or downhole oil exploration applications where conformal coating alone is insufficient.
For a precision integrator circuit, how does TLE2022MJGB's 0.006 µA max input offset current affect long-term accuracy?
In an integrator with a 10 nF capacitor, a 0.006 µA offset current produces a drift rate of 0.6 mV/s (I/C = 6 nA / 10 nF). Over a 60-second integration window, the accumulated voltage error is approximately 36 mV before reset—substantially better than a general-purpose op amp with 0.1 µA offset current that would drift 600 mV in the same interval. This makes TLE2022MJGB suitable for coulomb-counter and charge-integrator circuits requiring high accuracy over multiple seconds.
How does internal frequency compensation in TLE2022MJGB simplify PCB design compared to externally compensated op amps?
Internal frequency compensation eliminates the need for an external compensation capacitor pin and the associated PCB real estate, component tolerancing, and tuning effort. TLE2022MJGB is unity-gain stable straight out of the package, so designers can set closed-loop gains from 1 V/V upward without calculating a compensation network. This reduces BOM by 1–2 passive components per channel and removes a common source of oscillation during PCB bring-up.
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About Texas Instruments
Texas Instruments (TI) is a global semiconductor company headquartered in Dallas, Texas. TI designs and manufactures analog and embedded processing chips used in industrial, automotive, consumer, communications, and enterprise systems.
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