TK39A60W Toshiba Integrated Circuit (Transistor Outline, Vertical) In Stock
Toshiba TK39A60W is a 600 V, 38.8 A N-channel silicon power MOSFET using advanced DTMOS IV trench gate technology with a maximum drain-source on-resistance of 65 milliohm and an integrated freewheeling diode. It combines low conduction losses with high avalanche ruggedness for demanding power conversion applications. Available from authorized distributors with worldwide shipping.
- Manufacturer
- Toshiba
- Package
- Transistor Outline, Vertical
- Pin Count
- 3
- Lifecycle
- ACTIVE
- Datasheet
- TK39A60W Datasheet PDF
- Category
- Integrated Circuit
- Temp Range
- ?°C to 150.0°C
- RoHS
- Compliant
- Lead Time
- 3–7 business days
- Shipping
- DHL Express · Worldwide
What are the key features of TK39A60W?
- 600 V drain-source breakdown voltage and 38.8 A drain current for high-voltage power switching applications
- Low 65 milliohm RDS(on) using DTMOS IV advanced trench gate technology minimizes conduction losses
- 608 mJ avalanche energy rating provides robust ruggedness against inductive switching transients
- Integrated built-in body diode eliminates external freewheeling diode in bridge converter designs
What is TK39A60W used for?
The TK39A60W is optimized for switched-mode power supplies, PFC boost converters, and motor drive inverters requiring high-voltage switching at 600 V and up to 38.8 A. Its low 65 milliohm on-resistance and DTMOS IV structure reduce power dissipation in continuous conduction mode stages such as full-bridge inverters and DC-DC converters. This MOSFET is also used in EV charging equipment and industrial power modules where high avalanche ruggedness and efficient switching are essential.
What are the specifications of TK39A60W?
| Factory Lead Time | 32Weeks |
| YTEOL | 6.18 |
| Avalanche Energy Rating (Eas) | 608mJ |
| Case Connection | ISOLATED |
| Configuration | SINGLE WITH BUILT-IN DIODE |
| DS Breakdown Voltage-Min | 600V |
| Drain Current-Max (ID) | 38.8A |
| Drain-source On Resistance-Max | 0.065Ω |
| FET Technology | METAL-OXIDE SEMICONDUCTOR |
| Feedback Cap-Max (Crss) | 10pF |
| JEDEC-95 Code | TO-220AB |
| JESD-30 Code | R-PSFM-T3 |
| Number of Elements | 1 |
| Operating Mode | ENHANCEMENT MODE |
| Package Body Material | PLASTIC/EPOXY |
| Package Shape | RECTANGULAR |
| Package Style | FLANGE MOUNT |
| Polarity/Channel Type | N-CHANNEL |
| Power Dissipation-Max (Abs) | 50W |
| Pulsed Drain Current-Max (IDM) | 155A |
| Surface Mount | NO |
| Terminal Form | THROUGH-HOLE |
| Terminal Position | SINGLE |
| Transistor Application | SWITCHING |
| Transistor Element Material | SILICON |
| Package | Transistor Outline, Vertical |
Compliance & Regulatory
| RoHS Status | Compliant |
| Lead-Free | Yes (Pb-Free) |
| ECCN | EAR99 |
What are equivalent replacements for TK39A60W?
No known alternates. Submit an RFQ and our team can suggest alternatives.
Frequently Asked Questions
What are the drain-source voltage and current ratings that define the TK39A60W performance envelope?
The TK39A60W is rated for a minimum 600 V drain-source breakdown voltage and a maximum drain current of 38.8 A, with a drain-source on-resistance below 65 milliohm, supporting high-power switching in switched-mode power supplies and motor drive inverter designs.
Which power conversion topologies benefit most from the TK39A60W DTMOS IV technology?
PFC boost stages, full-bridge DC-DC converters, and motor drive inverters operating from 400 V DC bus rails benefit most, as the TK39A60W's 600 V rating offers a safe 50% voltage margin while its low 65 milliohm RDS(on) keeps conduction losses minimal at 38.8 A continuous operation.
How does the TK39A60W compare to a standard 600 V MOSFET when inductive load switching causes voltage spikes?
The TK39A60W is rated for a single-pulse avalanche energy of 608 millijoules and a 600 V breakdown voltage, giving it substantially greater ruggedness than standard devices when unclamped inductive switching generates high-voltage spikes that would otherwise damage a less robust MOSFET.
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About Toshiba
Toshiba is a leading electronic component manufacturer. FindMyChip sources Toshiba ICs directly from authorized China distributors, offering competitive pricing and reliable stock.
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