THS4061MJGB Texas Instruments Integrated Circuit (Ceramic Dual-In-Line Packages) In Stock
The THS4061MJGB is a Texas Instruments 180 MHz voltage-feedback operational amplifier with 70 dB minimum CMRR, 3 µA bias current at 25°C, and internal frequency compensation in a ceramic DIP package. It targets high-speed signal processing in military and aerospace environments requiring hermetic packaging. Available from stock with worldwide shipping.
- Manufacturer
- Texas Instruments
- Package
- Ceramic Dual-In-Line Packages
- Pin Count
- 8
- Lifecycle
- ACTIVE
- Datasheet
- THS4061MJGB Datasheet PDF
- Category
- Integrated Circuit
- Temp Range
- -55.0°C to 125.0°C
- RoHS
- Compliant
- Lead Time
- 3–7 business days
- Shipping
- DHL Express · Worldwide
Key Features
- 180 MHz (-3 dB) bandwidth enables high-speed analog signal processing at video and intermediate frequencies
- 70 dB minimum CMRR (110 dB typical) provides excellent common-mode noise rejection in precision measurement circuits
- Hermetic ceramic DIP package meets MIL-PRF-38535 requirements for high-reliability aerospace and defense applications
- Internal frequency compensation simplifies circuit design by eliminating external compensation capacitor networks
Applications
The THS4061MJGB is designed for high-reliability analog signal conditioning in military avionics, radar front-ends, and space-grade instrumentation where 180 MHz bandwidth and hermetic ceramic packaging are mandatory requirements. It is used in video line drivers, ADC input buffers, and IF amplifier chains in defense electronics operating across extended temperature ranges from -55°C to +125°C. The ceramic DIP package withstands harsh vibration, humidity, and thermal shock environments that would compromise plastic-packaged commercial op-amps.
Specifications
| Pbfree Code | Yes |
| YTEOL | 15 |
| Amplifier Type | OPERATIONAL AMPLIFIER |
| Architecture | VOLTAGE-FEEDBACK |
| Average Bias Current-Max (IIB) | 6 µA |
| Bandwidth (3dB)-Nom | 180MHz |
| Bias Current-Max (IIB) @25C | 3 µA |
| Common-mode Reject Ratio-Min | 70dB |
| Common-mode Reject Ratio-Nom | 110dB |
| Frequency Compensation | YES |
| Input Offset Current-Max (IIO) | 0.25 µA |
| Input Offset Voltage-Max | 8000 µV |
| JESD-30 Code | R-GDIP-T8 |
| JESD-609 Code | e0 |
| Low-Bias | NO |
| Low-Offset | NO |
| Micropower | NO |
| Neg Supply Voltage Limit-Max | -16.5 V |
| Neg Supply Voltage-Nom (Vsup) | -15 V |
| Number of Functions | 1 |
| Package Body Material | CERAMIC, GLASS-SEALED |
| Package Shape | RECTANGULAR |
| Package Style | IN-LINE |
| Packing Method | TUBE |
| Power | NO |
| Programmable Power | NO |
| Qualification Status | Not Qualified |
| Slew Rate-Min | 400V/us |
| Slew Rate-Nom | 400V/us |
| Subcategory | Operational Amplifier |
| Supply Current-Max | 9mA |
| Supply Voltage Limit-Max | 16.5V |
| Supply Voltage-Nom (Vsup) | 15V |
| Surface Mount | NO |
| Technology | BIPOLAR |
| Temperature Grade | MILITARY |
| Terminal Finish | Tin/Lead (Sn/Pb) |
| Terminal Form | THROUGH-HOLE |
| Terminal Pitch | 2.54mm |
| Terminal Position | DUAL |
| Unity Gain BW-Nom | 180000 |
| Voltage Gain-Min | 5000 |
| Wideband | YES |
| Package | Ceramic Dual-In-Line Packages |
Compliance & Regulatory
| RoHS Status | Compliant |
| Lead-Free | Yes (Pb-Free) |
| ECCN | EAR99 |
| HTS Code | 8542.33.00.01 |
Alternate & Equivalent Parts
No known alternates. Submit an RFQ and our team can suggest alternatives.
Frequently Asked Questions
For a radar IF amplifier chain, what signal frequencies can the THS4061MJGB amplify within its linear bandwidth?
The THS4061MJGB has a -3 dB bandwidth of 180 MHz, making it suitable for amplifying intermediate frequencies (IF) in the range of 10 MHz to 100 MHz commonly used in radar receivers, software-defined radio front-ends, and satellite ground station equipment. At a gain of +2 V/V, the usable small-signal bandwidth typically exceeds 100 MHz, supporting IF stages processing bandwidths of tens of megahertz without significant gain roll-off or phase distortion.
Why is the ceramic hermetic DIP package of the THS4061MJGB required for aerospace and defense applications?
The ceramic hermetic DIP package provides a sealed cavity that prevents moisture ingress, outgassing, and contamination that would degrade op-amp performance or cause corrosion failures in space vacuum or high-altitude environments. MIL-PRF-38535-qualified ceramic packages are rated for temperature ranges of -55°C to +125°C with thermal shock endurance of hundreds of cycles, compared to commercial plastic SOIC packages which absorb moisture and can crack during reflow. Defense procurement specifications such as Class B and Class V screening require ceramic hermetic packaging for long-life space and avionics programs.
How does the THS4061MJGB's 110 dB typical CMRR benefit precision differential measurement in noisy environments?
A 110 dB typical CMRR means that 1 V of common-mode noise on both inputs produces only 3.2 µV of equivalent differential input error (1 V divided by 10^(110/20)). In avionics sensor conditioning where power-supply ripple and EMI can inject 100 mV to 1 V of common-mode noise onto differential sensor lines, the 110 dB CMRR limits the noise contribution at the output to under 1 mV, maintaining measurement accuracy well below the ADC's least-significant-bit threshold for 12-bit converters on 5 V references.
What input bias current does the THS4061MJGB draw at room temperature, and how does this affect high-impedance sensor interfaces?
The THS4061MJGB draws a maximum input bias current of 3 µA at 25°C, rising to 6 µA maximum over temperature. For a source resistance of 10 kΩ, this creates a worst-case DC offset error of 3 µA × 10 kΩ = 30 mV, which is significant for precision DC measurements but acceptable for AC-coupled high-frequency signal paths. Designers using the THS4061MJGB with high-impedance sensors above 10 kΩ should include matched resistors at both inputs to cancel the bias current offset, or add a DC servo loop in precision amplifier configurations.
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About Texas Instruments
Texas Instruments (TI) is a global semiconductor company headquartered in Dallas, Texas. TI designs and manufactures analog and embedded processing chips used in industrial, automotive, consumer, communications, and enterprise systems.
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