SUD50N04-8M8P-4GE3 Vishay MOSFET (N-Channel) (Other) In Stock
SUD50N04-8M8P-4GE3 from Vishay is a mOSFET (N-Channel). Key specs include DS Breakdown Voltage-Min: 40 V, Drain Current-Max (ID): 14 A, Drain-source On Resistance-Max: 0.0088 Ohm. From inquiry pricing, buyers can request stock with worldwide shipping.
- Manufacturer
- Vishay
- Package
- Other
- Pin Count
- 3
- Lifecycle
- ACTIVE
- Datasheet
- SUD50N04-8M8P-4GE3 Datasheet PDF
- Category
- MOSFET (N-Channel)
- Price
- From $0.4370(MOQ 1)
- Temp Range
- ?°C to 150.0°C
- RoHS
- Compliant
- Lead Time
- 3–7 business days
- Shipping
- DHL Express · Worldwide
What are the key features of SUD50N04-8M8P-4GE3?
- Vishay MOSFET (N-Channel) for SUD50N04-8M8P-4GE3 sourcing and replacement review
- Other package configuration for board-level fit checks
- DS Breakdown Voltage-Min: 40 V
- Drain Current-Max (ID): 14 A
- 3-pin configuration for footprint and connector mapping
What is SUD50N04-8M8P-4GE3 used for?
SUD50N04-8M8P-4GE3 is used in assemblies that require a mOSFET (N-Channel) with DS Breakdown Voltage-Min: 40 V and a documented Other form factor. Typical uses include maintenance builds, approved-source replacements, prototype validation, and production purchasing where engineers must match electrical, mechanical, and lifecycle requirements before release.
What are the specifications of SUD50N04-8M8P-4GE3?
| YTEOL | 5.6 |
| Avalanche Energy Rating (Eas) | 45mJ |
| Case Connection | DRAIN |
| Configuration | SINGLE WITH BUILT-IN DIODE |
| DS Breakdown Voltage-Min | 40V |
| Drain Current-Max (ID) | 14A |
| Drain-source On Resistance-Max | 0.0088Ω |
| FET Technology | METAL-OXIDE SEMICONDUCTOR |
| JEDEC-95 Code | TO-252 |
| JESD-30 Code | R-PSSO-G2 |
| JESD-609 Code | e3 |
| Number of Elements | 1 |
| Operating Mode | ENHANCEMENT MODE |
| Package Body Material | PLASTIC/EPOXY |
| Package Shape | RECTANGULAR |
| Package Style | SMALL OUTLINE |
| Peak Reflow Temperature (Cel) | 260 |
| Polarity/Channel Type | N-CHANNEL |
| Power Dissipation-Max (Abs) | 48.1W |
| Pulsed Drain Current-Max (IDM) | 100A |
| Qualification Status | Not Qualified |
| Surface Mount | YES |
| Terminal Finish | Matte Tin (Sn) |
| Terminal Form | GULL WING |
| Terminal Position | SINGLE |
| Time@Peak Reflow Temperature-Max (s) | 30 |
| Transistor Application | SWITCHING |
| Transistor Element Material | SILICON |
| Package | Other |
Compliance & Regulatory
| RoHS Status | Compliant |
| Lead-Free | Yes (Pb-Free) |
| Moisture Sensitivity Level | MSL 1 |
| ECCN | EAR99 |
Where can I find the SUD50N04-8M8P-4GE3 datasheet?
SUD50N04-8M8P-4GE3 Datasheet DownloadOfficial datasheet from Vishay
What are equivalent replacements for SUD50N04-8M8P-4GE3?
No known alternates. Submit an RFQ and our team can suggest alternatives.
Frequently Asked Questions
Which design checks matter before using SUD50N04-8M8P-4GE3 in a mOSFET (N-Channel) application?
SUD50N04-8M8P-4GE3 should be checked against DS Breakdown Voltage-Min: 40 V, the current datasheet, and the target circuit conditions before it is approved for a production design.
How should the Other package influence board approval for SUD50N04-8M8P-4GE3?
The Other package should be compared with the PCB footprint, assembly process, and 3 pins requirement so purchasing does not approve a mechanically incompatible substitute.
When comparing alternates, which Vishay specification should stay matched?
Keep Drain-source On Resistance-Max: 0.0088 Ohm aligned first, then review tolerance, lifecycle, compliance, and sourcing risk because nearby MPNs can differ in ratings even when descriptions look similar.
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Why Buy from FindMyChip
About Vishay
Vishay is a leading electronic component manufacturer. FindMyChip sources Vishay ICs directly from authorized China distributors, offering competitive pricing and reliable stock.
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 1+ | $0.7070 | $0.71 |
| 5000+ | $0.4550 | $2275.00 |
| 7500+ | $0.4440 | $3330.00 |
| 10000+ | $0.4370 | $4370.00 |
In Stock · 24h Response · Worldwide Shipping
Response within 24 hours · Worldwide shipping
“Their engineering team helped us find a pin-compatible alternative when our original MCU went EOL.”
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