STY100NM60N STMicroelectronics MOSFET (N-Channel) (Transistor Outline, Vertical) In Stock
STY100NM60N is a high-voltage N-channel power MOSFET by STMicroelectronics. Key specs: 600 V drain-source breakdown voltage, 98 A maximum drain current, 29 mΩ on-resistance. From $4.50, in stock with worldwide shipping.
- Manufacturer
- STMicroelectronics
- Package
- Transistor Outline, Vertical
- Pin Count
- 3
- Lifecycle
- ACTIVE
- Datasheet
- STY100NM60N Datasheet PDF
- Category
- MOSFET (N-Channel)
- Price
- From $10.2035(MOQ 1)
- Temp Range
- -55.0°C to 150.0°C
- RoHS
- Compliant
- Lead Time
- 3–7 business days
- Shipping
- DHL Express · Worldwide
Key Features
- 600 V drain-source breakdown voltage enables robust high-voltage switching applications
- Ultra-low 29 mΩ drain-source on-resistance minimizes conduction losses at up to 98 A
- 757 mJ avalanche energy rating (Eas) provides excellent ruggedness for inductive switching
- Integrated built-in body diode eliminates need for external freewheeling diode in many designs
- TO-247 vertical through-hole package provides superior thermal dissipation for high-power use
Applications
STY100NM60N is designed for high-power switching applications such as motor drives, uninterruptible power supplies (UPS), and industrial inverters operating from 600 V bus rails. Its low on-resistance of 29 mΩ and high 98 A current rating make it ideal for PFC stages and DC-DC converters in industrial power equipment. The device is also used in welding machine power stages and renewable energy inverters where high-efficiency, high-voltage switching is required.
Specifications
| Factory Lead Time | 16Weeks |
| YTEOL | 0 |
| Avalanche Energy Rating (Eas) | 757mJ |
| Configuration | SINGLE WITH BUILT-IN DIODE |
| DS Breakdown Voltage-Min | 600V |
| Drain Current-Max (ID) | 98A |
| Drain-source On Resistance-Max | 0.029Ω |
| FET Technology | METAL-OXIDE SEMICONDUCTOR |
| Feedback Cap-Max (Crss) | 50pF |
| JESD-30 Code | R-PSIP-T3 |
| JESD-609 Code | e3 |
| Number of Elements | 1 |
| Operating Mode | ENHANCEMENT MODE |
| Package Body Material | PLASTIC/EPOXY |
| Package Shape | RECTANGULAR |
| Package Style | IN-LINE |
| Polarity/Channel Type | N-CHANNEL |
| Power Dissipation-Max (Abs) | 625W |
| Pulsed Drain Current-Max (IDM) | 392A |
| Surface Mount | NO |
| Terminal Finish | Matte Tin (Sn) |
| Terminal Form | THROUGH-HOLE |
| Terminal Position | SINGLE |
| Transistor Application | SWITCHING |
| Transistor Element Material | SILICON |
| Package | Transistor Outline, Vertical |
Compliance & Regulatory
| RoHS Status | Compliant |
| Lead-Free | Yes (Pb-Free) |
| ECCN | EAR99 |
| Country of Origin | Mainland China |
Alternate & Equivalent Parts
No known alternates. Submit an RFQ and our team can suggest alternatives.
Frequently Asked Questions
How does STY100NM60N's 29 mΩ on-resistance affect efficiency in a motor drive design?
With a drain-source on-resistance of only 29 mΩ at rated conditions, STY100NM60N produces very low conduction losses even at 98 A drain current, significantly improving overall efficiency in motor drive inverter stages operating from a 600 V DC bus.
What is the avalanche energy rating of STY100NM60N and why does it matter in inductive switching?
STY100NM60N has an avalanche energy rating (Eas) of 757 mJ, which means the device can safely absorb energy from inductive voltage spikes during turn-off without damage. This high ruggedness is critical in unclamped inductive switching (UIS) scenarios common in motor control and power conversion circuits.
Which industrial power supply topologies can benefit from using STY100NM60N's 600 V rating?
The 600 V breakdown voltage of STY100NM60N makes it well suited for boost PFC converters, half-bridge and full-bridge inverters, and industrial UPS designs connected to 400 V three-phase mains, where the DC bus can reach 800 V under transient conditions.
What package does STY100NM60N use and how does it support thermal management in high-power designs?
STY100NM60N comes in a TO-247 vertical through-hole package, which provides a large exposed metal tab for direct contact with a heatsink. This allows effective thermal management in high-power applications dissipating tens of watts, with a junction-to-case thermal resistance typically below 0.5 °C/W.
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About STMicroelectronics
STMicroelectronics is a global semiconductor leader serving customers across the spectrum of electronics applications. ST's products are found in a wide range of applications including automotive, industrial, personal electronics, and communications.
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 1+ | $18.7500 | $18.75 |
| 10+ | $16.8900 | $168.90 |
| 30+ | $15.6000 | $468.00 |
| 600+ | $10.2035 | $6122.10 |
In Stock · 24h Response · Worldwide Shipping
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