STWA70N65DM6 STMicroelectronics MOSFET (N-Channel) (Transistor Outline, Vertical) In Stock
STWA70N65DM6 is an N-channel 650 V MDmesh DM6 Power MOSFET from STMicroelectronics in a TO-247 long-lead package. It delivers 68 A continuous drain current with a typical RDS(on) of 36 mΩ and 1800 mJ avalanche energy rating. Available from authorized distributors with worldwide shipping.
- Manufacturer
- STMicroelectronics
- Package
- Transistor Outline, Vertical
- Pin Count
- 3
- Lifecycle
- ACTIVE
- Datasheet
- STWA70N65DM6 Datasheet PDF
- Category
- MOSFET (N-Channel)
- Price
- From $7.2991(MOQ 1)
- Temp Range
- -55.0°C to 150.0°C
- RoHS
- Compliant
- Lead Time
- 3–7 business days
- Shipping
- DHL Express · Worldwide
What are the key features of STWA70N65DM6?
- 650 V drain-source breakdown voltage with only 36 mΩ typical RDS(on), achieving an industry-competitive FOM for hard-switching and resonant topologies
- 68 A continuous drain current rating and 1800 mJ avalanche energy rating (Eas) provide robust margin for inductive switching transients in PFC and motor-drive circuits
- MDmesh DM6 super-junction technology reduces gate charge and switching losses compared to planar MOSFETs, enabling higher switching frequencies above 100 kHz with lower thermal dissipation
- Built-in body diode with fast reverse-recovery characteristics supports synchronous rectification and bridge configurations without external fast-recovery diodes
- TO-247 long-lead package offers low thermal resistance to case (RθJC ≤ 0.35 °C/W) and standard through-hole footprint, simplifying heatsink attachment in high-power designs
What is STWA70N65DM6 used for?
STWA70N65DM6 is designed for high-efficiency switch-mode power supplies (SMPS) including PFC boost stages, LLC resonant converters, and phase-shifted full-bridge topologies operating from 400 V DC bus rails. Its low RDS(on) and high avalanche energy rating make it well suited for variable-frequency motor drives, solar inverters, and EV on-board chargers where wide-load efficiency and ruggedness against inductive kick are critical. The TO-247 through-hole package with long leads eases heat management on high-power PCBs and chassis-mount applications up to several kilowatts.
What are the specifications of STWA70N65DM6?
| Factory Lead Time | 16Weeks |
| YTEOL | 5 |
| Avalanche Energy Rating (Eas) | 1800mJ |
| Case Connection | DRAIN |
| Configuration | SINGLE WITH BUILT-IN DIODE |
| DS Breakdown Voltage-Min | 650V |
| Drain Current-Max (ID) | 68A |
| Drain-source On Resistance-Max | 0.04Ω |
| FET Technology | METAL-OXIDE SEMICONDUCTOR |
| Feedback Cap-Max (Crss) | 3pF |
| JEDEC-95 Code | TO-247 |
| JESD-30 Code | R-PSFM-T3 |
| JESD-609 Code | e3 |
| Number of Elements | 1 |
| Operating Mode | ENHANCEMENT MODE |
| Package Body Material | PLASTIC/EPOXY |
| Package Shape | RECTANGULAR |
| Package Style | FLANGE MOUNT |
| Polarity/Channel Type | N-CHANNEL |
| Power Dissipation-Max (Abs) | 450W |
| Pulsed Drain Current-Max (IDM) | 260A |
| Surface Mount | NO |
| Terminal Finish | Matte Tin (Sn) |
| Terminal Form | THROUGH-HOLE |
| Terminal Position | SINGLE |
| Transistor Application | SWITCHING |
| Transistor Element Material | SILICON |
| Package | Transistor Outline, Vertical |
Compliance & Regulatory
| RoHS Status | Compliant |
| Lead-Free | Yes (Pb-Free) |
| ECCN | EAR99 |
| Country of Origin | Mainland China |
Where can I find the STWA70N65DM6 datasheet?
STWA70N65DM6 Datasheet DownloadOfficial datasheet from STMicroelectronics
What are equivalent replacements for STWA70N65DM6?
No known alternates. Submit an RFQ and our team can suggest alternatives.
Frequently Asked Questions
What RDS(on) and drain current does STWA70N65DM6 offer, and how does that compare to conventional planar 650 V MOSFETs?
STWA70N65DM6 achieves a typical RDS(on) of 36 mΩ at VGS = 10 V with a maximum continuous drain current of 68 A, translating to a low conduction loss figure of merit. Conventional planar 650 V MOSFETs in similar packages typically show RDS(on) above 60 mΩ at the same current rating, meaning MDmesh DM6 technology cuts conduction losses by roughly 40 % and allows designers to use fewer parallel devices in high-current power stages.
How does the 1800 mJ avalanche energy rating of STWA70N65DM6 benefit motor drive and inductive load designs?
The single-pulse avalanche energy rating (Eas) of 1800 mJ means STWA70N65DM6 can safely absorb large inductive energy spikes without damage, even when the drain voltage briefly exceeds 650 V during unclamped inductive switching (UIS) events. For a 5 mH motor winding carrying 10 A, the stored energy is 250 mJ — well within the 1800 mJ rating — providing a comfortable safety margin of more than 7x and reducing the need for bulky external snubbers or TVS diodes.
In what power conversion topologies is STWA70N65DM6 most effectively applied, and why?
STWA70N65DM6 is optimally suited for LLC series-resonant converters, PFC boost stages, and totem-pole bridgeless PFC circuits operating from 400 V DC bus, where switching frequencies of 65 kHz to 300 kHz demand low gate charge (Qg typically 120 nC) and fast switching transitions. Its 3 pF maximum feedback capacitance (Crss) minimises Miller charge and reduces gate driver losses, enabling power supply designs above 94 % peak efficiency for 2 kW to 5 kW server and telecom power supplies.
What thermal performance does the TO-247 package provide for STWA70N65DM6 in a chassis-mounted design?
The TO-247 package of STWA70N65DM6 offers a junction-to-case thermal resistance (RθJC) of 0.35 °C/W maximum. Mounted on a heatsink with RθCS = 0.1 °C/W and RθSA = 0.5 °C/W, the total thermal path reaches 0.95 °C/W, allowing roughly 157 W of continuous power dissipation before the junction hits 150 °C at a 25 °C ambient. The long-lead variant adds mechanical standoff from the PCB, reducing thermal coupling between the device body and board-level components.
When would STWA70N65DM6 be preferred over a wide-bandgap GaN device for a 3 kW PFC stage?
STWA70N65DM6 is preferred over GaN devices in 3 kW PFC stages where BOM cost, gate-driver simplicity, and avalanche ruggedness are priorities. Silicon super-junction MOSFETs such as STWA70N65DM6 use standard 10 V to 15 V gate drive and tolerate full UIS avalanche events at 1800 mJ, while GaN transistors require tightly controlled gate signals below 6 V and offer no avalanche rating, demanding additional protection circuitry that raises system cost. For switching frequencies below 150 kHz, MDmesh DM6 delivers efficiency within 1 % to 2 % of GaN at significantly lower component cost.
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Why Buy from FindMyChip
About STMicroelectronics
STMicroelectronics is a global semiconductor leader serving customers across the spectrum of electronics applications. ST's products are found in a wide range of applications including automotive, industrial, personal electronics, and communications.
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 1+ | $12.8000 | $12.80 |
| 5+ | $12.4800 | $62.40 |
| 10+ | $10.5000 | $105.00 |
| 30+ | $9.1400 | $274.20 |
| 600+ | $7.3380 | $4402.80 |
| 2400+ | $7.2991 | $17517.94 |
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