STW9NK90Z STMicroelectronics MOSFET (N-Channel) (Transistor Outline, Vertical) In Stock
STMicroelectronics STW9NK90Z is a single N-channel power MOSFET with built-in diode in a TO-247 vertical package. It features a 900 V drain-source breakdown voltage, 8 A drain current, 1.3 Ω on-resistance, and 220 mJ avalanche energy rating. Available from stock with worldwide shipping.
- Manufacturer
- STMicroelectronics
- Package
- Transistor Outline, Vertical
- Pin Count
- 3
- Lifecycle
- ACTIVE
- Datasheet
- STW9NK90Z Datasheet PDF
- Category
- MOSFET (N-Channel)
- Temp Range
- ?°C to 150.0°C
- RoHS
- Compliant
- Lead Time
- 3–7 business days
- Shipping
- DHL Express · Worldwide
Key Features
- 900 V drain-source breakdown voltage enables operation in high-voltage AC-DC converter and inverter topologies
- 8 A continuous drain current capacity supports medium-power switching stages up to several hundred watts
- 220 mJ avalanche energy rating provides robust protection against inductive voltage spikes during hard switching
- 1.3 Ω maximum on-resistance limits conduction losses in high-efficiency power supply designs
- TO-247AC vertical through-hole package offers excellent thermal dissipation when mounted to a heatsink
Applications
The STW9NK90Z is designed for high-voltage switching applications such as offline flyback converters, half-bridge and full-bridge inverters, and AC motor drive circuits operating from rectified mains up to 900 V. Its 220 mJ avalanche energy rating and built-in body diode make it robust in inductive switching environments where voltage spikes are common. The TO-247AC package allows efficient thermal management with clip-mount or screw-mount heatsinks in industrial power supplies and renewable energy inverters.
Specifications
| Factory Lead Time | 16Weeks |
| YTEOL | 6.2 |
| Additional Feature | AVALANCHE RATED |
| Avalanche Energy Rating (Eas) | 220mJ |
| Configuration | SINGLE WITH BUILT-IN DIODE |
| DS Breakdown Voltage-Min | 900V |
| Drain Current-Max (ID) | 8A |
| Drain-source On Resistance-Max | 1.3Ω |
| FET Technology | METAL-OXIDE SEMICONDUCTOR |
| JEDEC-95 Code | TO-247AC |
| JESD-30 Code | R-PSFM-T3 |
| JESD-609 Code | e3 |
| Number of Elements | 1 |
| Operating Mode | ENHANCEMENT MODE |
| Package Body Material | PLASTIC/EPOXY |
| Package Shape | RECTANGULAR |
| Package Style | FLANGE MOUNT |
| Polarity/Channel Type | N-CHANNEL |
| Power Dissipation-Max (Abs) | 160W |
| Pulsed Drain Current-Max (IDM) | 32A |
| Qualification Status | Not Qualified |
| Surface Mount | NO |
| Terminal Finish | Matte Tin (Sn) |
| Terminal Form | THROUGH-HOLE |
| Terminal Position | SINGLE |
| Transistor Application | SWITCHING |
| Transistor Element Material | SILICON |
| Package | Transistor Outline, Vertical |
Compliance & Regulatory
| RoHS Status | Compliant |
| Lead-Free | Yes (Pb-Free) |
| ECCN | EAR99 |
| Country of Origin | Mainland China |
Alternate & Equivalent Parts
No known alternates. Submit an RFQ and our team can suggest alternatives.
Frequently Asked Questions
Which power converter topologies benefit most from the STW9NK90Z 900 V breakdown voltage?
The 900 V drain-source breakdown voltage of the STW9NK90Z makes it well suited for offline flyback converters, LLC resonant converters, and half-bridge topologies powered from rectified 230 V AC mains, where bus voltages can reach 400 V DC and voltage ringing at turn-off may add another 200 V to 300 V above that level.
How does the 220 mJ avalanche energy rating protect the STW9NK90Z in inductive switching circuits?
The 220 mJ avalanche energy rating of the STW9NK90Z allows it to absorb repeated inductive voltage spikes that exceed the 900 V breakdown level without immediately failing. This is critical in motor drive and inverter designs where parasitic inductance in the switching loop generates overvoltage transients during turn-off, and snubber design is imperfect or cost-constrained.
What continuous drain current can the STW9NK90Z deliver in a typical offline power supply?
The STW9NK90Z supports a maximum continuous drain current of 8 A at rated conditions, which corresponds to output powers of roughly 400 W to 800 W in single-switch offline converter topologies depending on topology efficiency and duty cycle. The TO-247AC package with an adequate heatsink is required to sustain continuous operation at elevated drain currents.
When is the STW9NK90Z a better choice than a lower-voltage MOSFET with smaller on-resistance?
The STW9NK90Z is the better choice when the design must withstand bus voltages or transient spikes above 600 V, for example in 230 V AC mains-powered equipment. Lower-voltage MOSFETs with sub-0.5 Ω on-resistance save conduction losses but would immediately fail under high-voltage stress. The STW9NK90Z balances the 1.3 Ω on-resistance against its 900 V robustness for medium-power industrial designs.
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