STW88N65M5 STMicroelectronics Power MOSFETs (TO-247) In Stock
STW88N65M5 is an N-channel 650 V MDmesh M5 Power MOSFET by STMicroelectronics in a TO-247 package with built-in diode. Key specs: 84 A drain current, 29 mΩ max on-resistance, 2000 mJ avalanche energy rating. From $5.00, in stock with worldwide shipping.
- Manufacturer
- STMicroelectronics
- Package
- TO-247
- Pin Count
- 3
- Lifecycle
- ACTIVE
- Datasheet
- STW88N65M5 Datasheet PDF
- Category
- Power MOSFETs
- Price
- From $8.3152(MOQ 1)
- Temp Range
- ?°C to 150.0°C
- RoHS
- Compliant
- Lead Time
- 3–7 business days
- Shipping
- DHL Express · Worldwide
What are the key features of STW88N65M5?
- 650 V breakdown voltage and 84 A continuous drain current rating enable high-power switching in PFC and inverter stages
- Ultra-low 24 mΩ typical drain-source on-resistance minimizes conduction losses and improves efficiency in hard-switching topologies
- 2000 mJ avalanche energy rating (Eas) provides robust unclamped inductive switching (UIS) protection in motor drive and power converter designs
What is STW88N65M5 used for?
STW88N65M5 is designed for high-efficiency power conversion applications including PFC boost converters, LLC resonant converters, solar inverters, and three-phase motor drives operating from 400 V AC mains. Its MDmesh M5 super-junction structure delivers low switching losses alongside low RDS(on), making it a preferred choice for industrial power supplies targeting 80 PLUS Gold or Platinum efficiency ratings. The TO-247 package with case-connected drain simplifies heatsink mounting in high-power chassis designs.
What are the specifications of STW88N65M5?
| Factory Lead Time | 16Weeks |
| YTEOL | 5 |
| Avalanche Energy Rating (Eas) | 2000mJ |
| Case Connection | DRAIN |
| Configuration | SINGLE WITH BUILT-IN DIODE |
| DS Breakdown Voltage-Min | 650V |
| Drain Current-Max (ID) | 84A |
| Drain-source On Resistance-Max | 0.029Ω |
| FET Technology | METAL-OXIDE SEMICONDUCTOR |
| JEDEC-95 Code | TO-247 |
| JESD-30 Code | R-PSFM-T3 |
| JESD-609 Code | e3 |
| Number of Elements | 1 |
| Operating Mode | ENHANCEMENT MODE |
| Package Body Material | PLASTIC/EPOXY |
| Package Shape | RECTANGULAR |
| Package Style | FLANGE MOUNT |
| Polarity/Channel Type | N-CHANNEL |
| Power Dissipation-Max (Abs) | 450W |
| Pulsed Drain Current-Max (IDM) | 336A |
| Surface Mount | NO |
| Terminal Finish | Matte Tin (Sn) |
| Terminal Form | THROUGH-HOLE |
| Terminal Position | SINGLE |
| Transistor Application | SWITCHING |
| Transistor Element Material | SILICON |
| Package | TO-247 |
Compliance & Regulatory
| RoHS Status | Compliant |
| Lead-Free | Yes (Pb-Free) |
| ECCN | EAR99 |
| Country of Origin | Mainland China |
Where can I find the STW88N65M5 datasheet?
STW88N65M5 Datasheet DownloadOfficial datasheet from STMicroelectronics
What are equivalent replacements for STW88N65M5?
No known alternates. Submit an RFQ and our team can suggest alternatives.
Frequently Asked Questions
What continuous drain current and breakdown voltage does STW88N65M5 support in hard-switching power converter designs?
STW88N65M5 is rated for 84 A continuous drain current and a minimum 650 V drain-source breakdown voltage. These ratings make it suitable for full-bridge and half-bridge converters operating from 400 V rectified AC mains, where peak blocking voltages regularly exceed 400 V during switching transients.
How does the 2000 mJ avalanche energy rating of STW88N65M5 benefit motor drive circuit designs?
The 2000 mJ avalanche energy rating (Eas) means STW88N65M5 can absorb large inductive energy spikes without device failure during unclamped inductive switching (UIS) events. In motor drive applications, where stray inductance in the power loop can generate hundreds of volts of overshoot above 650 V, this high Eas provides a critical safety margin for reliable operation without external clamping networks.
What RDS(on) does STW88N65M5 achieve and how does the MDmesh M5 super-junction technology contribute to this?
STW88N65M5 achieves a typical RDS(on) of 24 mΩ and a maximum of 29 mΩ, which is very low for a 650 V rated MOSFET. STMicroelectronics MDmesh M5 super-junction technology achieves this by using a deeply trench-etched charge-balancing structure that dramatically reduces the resistivity of the N-type drift region, yielding lower conduction losses at 84 A than conventional 650 V planar MOSFETs.
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About STMicroelectronics
STMicroelectronics is a global semiconductor leader serving customers across the spectrum of electronics applications. ST's products are found in a wide range of applications including automotive, industrial, personal electronics, and communications.
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 1+ | $10.8200 | $10.82 |
| 10+ | $8.8358 | $88.36 |
| 100+ | $8.7683 | $876.83 |
| 510+ | $8.5750 | $4373.25 |
| 2400+ | $8.4691 | $20325.94 |
| 4800+ | $8.3151 | $39912.72 |
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