STW65N65DM2AGAlternatives & Equivalent Parts
About STW65N65DM2AG
STW65N65DM2AG is a MOSFET (N-Channel) component manufactured by STMicroelectronics. It comes in a Transistor Outline, Vertical package. Below you'll find known alternative and equivalent parts that can serve as replacements in your design.
Need pricing on these alternatives?
Get one quote covering this alternative for STW65N65DM2AG — response within 24 hours.
Specification Comparison
| Parameter | STW65N65DM2AGSource | STW65N60DM6 |
|---|---|---|
| Manufacturer | STMicroelectronics | STMicroelectronics |
| Package Type | Transistor Outline, Vertical | Transistor Outline, Vertical |
| Pin Count | 3 | 3 |
| Temperature Range | -55.0°C ~ 150.0°C | -55.0°C ~ 150.0°C |
| Price | $4.9519 | $3.4742 |
| Stock | In Stock | In Stock |
| Lifecycle | ACTIVE | ACTIVE |
| Electrical Parameters | ||
| Factory Lead Time | 16 Weeks | 16 Weeks |
| YTEOL | 5 | 5 |
| Avalanche Energy Rating (Eas) | 1100 mJ | 900 mJ |
| Configuration | SINGLE WITH BUILT-IN DIODE | SINGLE WITH BUILT-IN DIODE |
| DS Breakdown Voltage-Min | 650 V | 600 V |
| Drain Current-Max (ID) | 60 A | 46 A |
| Drain-source On Resistance-Max | 0.05 Ω | 0.071 Ω |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR |
| Feedback Cap-Max (Crss) | 3 pF | 4 pF |
| JEDEC-95 Code | TO-247 | TO-247 |
| JESD-30 Code | R-PSFM-T3 | R-PSFM-T3 |
| JESD-609 Code | e3 | — |
| Number of Elements | 1 | 1 |
| Operating Mode | ENHANCEMENT MODE | ENHANCEMENT MODE |
| Package Body Material | PLASTIC/EPOXY | PLASTIC/EPOXY |
| Package Shape | RECTANGULAR | RECTANGULAR |
| Package Style | FLANGE MOUNT | FLANGE MOUNT |
| Polarity/Channel Type | N-CHANNEL | N-CHANNEL |
| Power Dissipation-Max (Abs) | 446 W | 368 W |
| Pulsed Drain Current-Max (IDM) | 240 A | 140 A |
| Reference Standard | AEC-Q101 | — |
| Surface Mount | NO | NO |
| Terminal Finish | Matte Tin (Sn) - annealed | — |
| Terminal Form | THROUGH-HOLE | THROUGH-HOLE |
| Terminal Position | SINGLE | SINGLE |
| Transistor Application | SWITCHING | SWITCHING |
| Transistor Element Material | SILICON | SILICON |
| Case Connection | — | DRAIN |
| Peak Reflow Temperature (Cel) | — | NOT SPECIFIED |
| Time@Peak Reflow Temperature-Max (s) | — | NOT SPECIFIED |
Cells highlighted in yellow indicate differing values across parts. Always verify with official datasheets before substitution.
Need pricing on these alternatives?
Get one quote covering this alternative for STW65N65DM2AG — response within 24 hours.
Quick Links
Power Field-Effect Transistor, 46A I(D), 600V, 0.071ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247
Why Look for Alternatives?
Finding alternatives for STW65N65DM2AG is essential for supply chain resilience. Component shortages, long lead times, and end-of-life notices can disrupt production schedules. Having verified alternative parts ensures your designs remain manufacturable.
When evaluating STW65N65DM2AG replacements, consider key parameters such as package compatibility, electrical specifications, and operating temperature range. Our engineering team can help verify pin-to-pin compatibility for your specific application.
Can't Find What You Need?
Our sourcing team can help find compatible alternatives for STW65N65DM2AG. Get expert recommendations within 24 hours.
FAQ
What is equivalent to STW65N65DM2AG?
Known equivalents for STW65N65DM2AG include STW65N60DM6. Contact FindMyChip for a full compatibility analysis for your specific application.
Can I use a different manufacturer's part instead of STW65N65DM2AG?
In many cases, yes. Cross-manufacturer alternatives exist for most standard components. However, always verify pin compatibility, electrical specs, and package dimensions before substituting in production.
How do I verify STW65N65DM2AG alternatives?
Compare the datasheet specifications including pinout, voltage ratings, timing parameters, and package dimensions. FindMyChip's engineering team can help with compatibility verification — submit an RFQ to get started.