STW38N65M5 STMicroelectronics MOSFET (N-Channel) (Transistor Outline, Vertical) In Stock
The STW38N65M5 is an N-channel 650 V MDmesh M5 series power MOSFET offering 30 A continuous drain current and 95 mΩ maximum on-resistance. It features a high 660 mJ avalanche energy rating and is available in TO-247 through-hole package for robust thermal management. This device is optimized for high-efficiency PFC stages, resonant converters, and industrial motor drives.
- Manufacturer
- STMicroelectronics
- Package
- Transistor Outline, Vertical
- Pin Count
- 3
- Lifecycle
- ACTIVE
- Datasheet
- STW38N65M5 Datasheet PDF
- Category
- MOSFET (N-Channel)
- Price
- From $2.9645(MOQ 1)
- Temp Range
- ?°C to 150.0°C
- RoHS
- Compliant
- Lead Time
- 3–7 business days
- Shipping
- DHL Express · Worldwide
Key Features
- 650 V drain-source breakdown voltage for high-voltage power conversion
- 30 A continuous drain current with 73 mΩ typical on-resistance
- 660 mJ avalanche energy rating for rugged transient protection
- MDmesh M5 technology for reduced switching losses at high frequency
- Available in TO-247, TO-220, and D²PAK packages
- Integrated body diode for flyback and resonant converter topologies
- Low gate charge enabling efficient switching above 100 kHz
Applications
The STW38N65M5 is a high-performance solution for server power supplies, telecom rectifiers, and industrial UPS systems where 650 V rail operation and high switching efficiency above 100 kHz are required. It is well suited for totem-pole PFC and LLC resonant converter stages in AC/DC power supplies targeting 80 Plus Titanium efficiency levels. Solar micro-inverters and EV on-board chargers also benefit from the device's low switching losses and high avalanche robustness.
Specifications
| Factory Lead Time | 16Weeks |
| YTEOL | 5 |
| Avalanche Energy Rating (Eas) | 660mJ |
| Case Connection | ISOLATED |
| Configuration | SINGLE WITH BUILT-IN DIODE |
| DS Breakdown Voltage-Min | 650V |
| Drain Current-Max (ID) | 30A |
| Drain-source On Resistance-Max | 0.095Ω |
| FET Technology | METAL-OXIDE SEMICONDUCTOR |
| JEDEC-95 Code | TO-247 |
| JESD-30 Code | R-PSFM-T3 |
| JESD-609 Code | e3 |
| Number of Elements | 1 |
| Operating Mode | ENHANCEMENT MODE |
| Package Body Material | PLASTIC/EPOXY |
| Package Shape | RECTANGULAR |
| Package Style | FLANGE MOUNT |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED |
| Polarity/Channel Type | N-CHANNEL |
| Power Dissipation-Max (Abs) | 190W |
| Pulsed Drain Current-Max (IDM) | 120A |
| Surface Mount | NO |
| Terminal Finish | Matte Tin (Sn) - annealed |
| Terminal Form | THROUGH-HOLE |
| Terminal Position | SINGLE |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
| Transistor Application | SWITCHING |
| Transistor Element Material | SILICON |
| Package | Transistor Outline, Vertical |
Compliance & Regulatory
| RoHS Status | Compliant |
| Lead-Free | Yes (Pb-Free) |
| ECCN | EAR99 |
| Country of Origin | Mainland China |
Alternate & Equivalent Parts
No known alternates. Submit an RFQ and our team can suggest alternatives.
Frequently Asked Questions
What on-resistance and drain current does the STW38N65M5 guarantee at full load?
The STW38N65M5 guarantees a maximum drain-source on-resistance of 95 mΩ at 25°C junction temperature with a gate drive of 10 V, and a continuous drain current rating of 30 A. The typical on-resistance is 73 mΩ, which translates to approximately 65 W conduction loss at 30 A, making it suitable for high-efficiency power stages operating from a 650 V bus.
How does the 660 mJ avalanche energy rating benefit designs with inductive loads?
The 660 mJ avalanche energy rating allows the STW38N65M5 to absorb large inductive voltage spikes that exceed the 650 V drain-source breakdown without damage, reducing the need for additional clamping components in motor drive snubber circuits. This robustness is critical in variable-frequency drives where line transients and back-EMF during braking events can generate voltage spikes well above the DC bus level of 400 V.
Which package options are available for the STW38N65M5 and how do they affect thermal design?
The STW38N65M5 family is offered in TO-247, TO-220, and D²PAK packages. The TO-247 through-hole package provides the lowest thermal resistance junction-to-case, enabling efficient heatsink coupling for dissipating up to 300 W in forced-air cooled power converter assemblies. The D²PAK surface-mount option sacrifices some thermal performance but enables automated assembly on high-density PCBs in compact power modules.
For a totem-pole PFC design running at 200 kHz, is STW38N65M5 a suitable choice?
Yes, the STW38N65M5 MDmesh M5 technology is specifically optimized for hard-switching topologies at frequencies up to 200 kHz by minimizing gate charge and output capacitance (Coss). At 200 kHz switching frequency on a 400 V DC bus, the device achieves low turn-on and turn-off switching losses, enabling 99% PFC stage efficiency targets required by 80 Plus Titanium server power supply specifications.
How does STW38N65M5 compare to a silicon carbide MOSFET at similar voltage ratings?
Compared to 650 V SiC MOSFETs, the STW38N65M5 offers a lower purchase price and is available in standard TO-247 packages compatible with existing PCB layouts. SiC devices provide lower switching losses above 100 kHz and better high-temperature on-resistance stability, but the STW38N65M5 delivers competitive efficiency below 100 kHz switching frequencies with its 73 mΩ typical Rds(on), making it a cost-effective alternative for industrial and consumer power supplies not requiring extreme frequency operation.
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About STMicroelectronics
STMicroelectronics is a global semiconductor leader serving customers across the spectrum of electronics applications. ST's products are found in a wide range of applications including automotive, industrial, personal electronics, and communications.
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 1+ | $7.9800 | $7.98 |
| 2+ | $4.2937 | $8.59 |
| 4+ | $3.0526 | $12.21 |
| 8+ | $3.0085 | $24.07 |
| 16+ | $2.9645 | $47.43 |
In Stock · 24h Response · Worldwide Shipping
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