STW35N60DM2Alternatives & Equivalent Parts

About STW35N60DM2

STW35N60DM2 is a MOSFET (N-Channel) component manufactured by STMicroelectronics. It comes in a Transistor Outline, Vertical package. Below you'll find known alternative and equivalent parts that can serve as replacements in your design.

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Specification Comparison

ParameterSTW35N60DM2SourceSTW35N65DM2STW35N65M5
ManufacturerSTMicroelectronicsSTMicroelectronicsSTMicroelectronics
Package TypeTransistor Outline, VerticalTransistor Outline, VerticalTransistor Outline, Vertical
Pin Count333
Temperature Range-55.0°C ~ 150.0°C~ 150.0°C
Price$2.0658$2.3541$4.7400
StockIn StockIn StockIn Stock
LifecycleACTIVEACTIVEOBSOLETE
Electrical Parameters
Factory Lead Time16 Weeks16 Weeks
YTEOL550
JESD-609 Codee3e3
Terminal FinishMatte Tin (Sn)Matte Tin (Sn)
Avalanche Energy Rating (Eas)1150 mJ800 mJ
Case ConnectionDRAINISOLATED
ConfigurationSINGLE WITH BUILT-IN DIODESINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min650 V650 V
Drain Current-Max (ID)32 A27 A
Drain-source On Resistance-Max0.11 Ω0.098 Ω
FET TechnologyMETAL-OXIDE SEMICONDUCTORMETAL-OXIDE SEMICONDUCTOR
Feedback Cap-Max (Crss)2.5 pF
JEDEC-95 CodeTO-247TO-247
JESD-30 CodeR-PSFM-T3R-PSFM-T3
Number of Elements11
Operating ModeENHANCEMENT MODEENHANCEMENT MODE
Package Body MaterialPLASTIC/EPOXYPLASTIC/EPOXY
Package ShapeRECTANGULARRECTANGULAR
Package StyleFLANGE MOUNTFLANGE MOUNT
Peak Reflow Temperature (Cel)NOT SPECIFIED
Polarity/Channel TypeN-CHANNELN-CHANNEL
Power Dissipation-Max (Abs)250 W160 W
Pulsed Drain Current-Max (IDM)90 A108 A
Surface MountNONO
Terminal FormTHROUGH-HOLETHROUGH-HOLE
Terminal PositionSINGLESINGLE
Time@Peak Reflow Temperature-Max (s)NOT SPECIFIED
Transistor ApplicationSWITCHINGSWITCHING
Transistor Element MaterialSILICONSILICON
Qualification StatusNot Qualified

Cells highlighted in yellow indicate differing values across parts. Always verify with official datasheets before substitution.

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Get one quote covering all 2 alternatives for STW35N60DM2 — response within 24 hours.

Quick Links

STW35N65DM2by STMicroelectronics

Power Field-Effect Transistor, 32A I(D), 650V, 0.11ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247

STW35N65M5by STMicroelectronics

Power Field-Effect Transistor, 27A I(D), 650V, 0.098ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247

Why Look for Alternatives?

Finding alternatives for STW35N60DM2 is essential for supply chain resilience. Component shortages, long lead times, and end-of-life notices can disrupt production schedules. Having verified alternative parts ensures your designs remain manufacturable.

When evaluating STW35N60DM2 replacements, consider key parameters such as package compatibility, electrical specifications, and operating temperature range. Our engineering team can help verify pin-to-pin compatibility for your specific application.

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FAQ

What is equivalent to STW35N60DM2?

Known equivalents for STW35N60DM2 include STW35N65DM2, STW35N65M5. Contact FindMyChip for a full compatibility analysis for your specific application.

Can I use a different manufacturer's part instead of STW35N60DM2?

In many cases, yes. Cross-manufacturer alternatives exist for most standard components. However, always verify pin compatibility, electrical specs, and package dimensions before substituting in production.

How do I verify STW35N60DM2 alternatives?

Compare the datasheet specifications including pinout, voltage ratings, timing parameters, and package dimensions. FindMyChip's engineering team can help with compatibility verification — submit an RFQ to get started.