STW20NK50Z STMicroelectronics MOSFET (N-Channel) (Transistor Outline, Vertical) In Stock
The STW20NK50Z is an N-channel SuperMESH Power MOSFET from STMicroelectronics rated at 500V and 20A with ultra-low 0.23Ω on-resistance. It integrates Zener gate protection and features 850mJ avalanche energy rating in a robust TO-247 through-hole package. Suitable for high-efficiency power conversion and motor drive applications in industrial and consumer power systems.
- Manufacturer
- STMicroelectronics
- Package
- Transistor Outline, Vertical
- Pin Count
- 3
- Lifecycle
- ACTIVE
- Datasheet
- STW20NK50Z Datasheet PDF
- Category
- MOSFET (N-Channel)
- Price
- From $1.5069(MOQ 1)
- Temp Range
- ?°C to 150.0°C
- RoHS
- Compliant
- Lead Time
- 3–7 business days
- Shipping
- DHL Express · Worldwide
Key Features
- SuperMESH technology delivers best-in-class 500V / 0.23Ω figure-of-merit, minimizing conduction losses in high-voltage power conversion stages
- Built-in Zener gate protection clamps gate-source voltage to prevent electrostatic discharge damage and improve ruggedness in noisy industrial environments
- 850mJ avalanche energy rating (Eas) and robust TO-247AC package support repetitive unclamped inductive switching for reliable motor drive and power supply designs
Applications
The STW20NK50Z is used in switch-mode power supply (SMPS) topologies including flyback, forward, and half-bridge converters requiring a 500V switching device with low conduction losses. Its high avalanche energy rating and Zener gate protection make it well-suited for motor drive inverters, UPS systems, and industrial power factor correction (PFC) stages. It is also applied in high-voltage DC-DC converters for solar inverters and battery chargers where efficiency and device ruggedness are critical.
Specifications
| Factory Lead Time | 16Weeks |
| YTEOL | 5.95 |
| Avalanche Energy Rating (Eas) | 850mJ |
| Configuration | SINGLE WITH BUILT-IN DIODE |
| DS Breakdown Voltage-Min | 500V |
| Drain Current-Max (ID) | 17A |
| Drain-source On Resistance-Max | 0.27Ω |
| FET Technology | METAL-OXIDE SEMICONDUCTOR |
| JEDEC-95 Code | TO-247AC |
| JESD-30 Code | R-PSFM-T3 |
| JESD-609 Code | e3 |
| Number of Elements | 1 |
| Operating Mode | ENHANCEMENT MODE |
| Package Body Material | PLASTIC/EPOXY |
| Package Shape | RECTANGULAR |
| Package Style | FLANGE MOUNT |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED |
| Polarity/Channel Type | N-CHANNEL |
| Power Dissipation-Max (Abs) | 190W |
| Pulsed Drain Current-Max (IDM) | 68A |
| Qualification Status | Not Qualified |
| Surface Mount | NO |
| Terminal Finish | Matte Tin (Sn) |
| Terminal Form | THROUGH-HOLE |
| Terminal Position | SINGLE |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
| Transistor Application | SWITCHING |
| Transistor Element Material | SILICON |
| Package | Transistor Outline, Vertical |
Compliance & Regulatory
| RoHS Status | Compliant |
| Lead-Free | Yes (Pb-Free) |
| ECCN | EAR99 |
| Country of Origin | Mainland China |
Alternate & Equivalent Parts
No known alternates. Submit an RFQ and our team can suggest alternatives.
Frequently Asked Questions
What are the key electrical ratings for the STW20NK50Z?
The STW20NK50Z is rated for a drain-source voltage (VDS) of 500V, a continuous drain current (ID) of 20A (17A per datasheet minimum), and a maximum on-resistance (RDS(on)) of 0.27Ω at VGS = 10V. The device also has an avalanche energy (Eas) rating of 850mJ, indicating strong ruggedness under inductive switching events.
What does the 'Z' suffix mean in STW20NK50Z?
The 'Z' suffix in STW20NK50Z indicates that this MOSFET includes an integrated Zener gate-source protection diode. This built-in clamp protects the gate oxide from electrostatic discharge and overvoltage transients, enhancing handling safety during assembly and improving reliability in high-noise power conversion environments.
What package does the STW20NK50Z use?
The STW20NK50Z is housed in a TO-247AC (JEDEC-95 code TO-247AC) through-hole package, also identified by the JESD-30 code R-PSFM-T3. The TO-247 package provides excellent thermal performance with a low junction-to-case thermal resistance, making it ideal for high-power applications where a heatsink is attached.
What is SuperMESH technology and why does it matter for this MOSFET?
SuperMESH is STMicroelectronics' proprietary trench MOSFET process that achieves an optimized trade-off between breakdown voltage and on-resistance. For the STW20NK50Z, this results in a low RDS(on) of 0.23Ω at 500V rating, significantly reducing conduction losses compared to older planar MOSFET technologies at the same voltage class. This translates directly to higher efficiency in power conversion designs.
What are typical applications for the STW20NK50Z in power supplies?
The STW20NK50Z is widely used as the main switching element in offline switch-mode power supplies (SMPS) with input voltages up to 400V AC, such as flyback converters and LLC resonant converters. Its 500V rating provides adequate margin for line voltage transients, while the low RDS(on) ensures minimal heat generation in the switching stage, enabling high-efficiency designs above 90% efficiency.
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About STMicroelectronics
STMicroelectronics is a global semiconductor leader serving customers across the spectrum of electronics applications. ST's products are found in a wide range of applications including automotive, industrial, personal electronics, and communications.
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 1+ | $3.5700 | $3.57 |
| 5+ | $3.4000 | $17.00 |
| 10+ | $3.1300 | $31.30 |
| 100+ | $2.3700 | $237.00 |
| 600+ | $1.5140 | $908.40 |
| 2400+ | $1.5069 | $3616.58 |
In Stock · 24h Response · Worldwide Shipping
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