STW12NK80Z STMicroelectronics MOSFET (N-Channel) (Transistor Outline, Vertical) In Stock
STMicroelectronics STW12NK80Z is an 800 V N-channel power MOSFET in TO-247 package with 10.5 A drain current and 0.75 Ω Rds(on). Features 400 mJ avalanche energy rating. Available from stock worldwide.
- Manufacturer
- STMicroelectronics
- Package
- Transistor Outline, Vertical
- Pin Count
- 3
- Lifecycle
- ACTIVE
- Datasheet
- STW12NK80Z Datasheet PDF
- Category
- MOSFET (N-Channel)
- Price
- From $1.9280(MOQ 1)
- Temp Range
- ?°C to 150.0°C
- RoHS
- Compliant
- Lead Time
- 3–7 business days
- Shipping
- DHL Express · Worldwide
What are the key features of STW12NK80Z?
- 800 V drain-source breakdown voltage enabling safe operation in high-voltage flyback, PFC, and half-bridge converter topologies
- 10.5 A continuous drain current with 0.75 Ω max Rds(on) balancing conduction loss and voltage handling in a through-hole TO-247AC package
- 400 mJ avalanche energy rating (Eas) providing robust unclamped inductive switching ruggedness for inductive motor and transformer loads
What is STW12NK80Z used for?
The STW12NK80Z is designed for high-voltage power conversion applications including offline flyback SMPS, boost PFC stages, and half-bridge inverters operating from rectified 230 VAC or 400 V DC bus. Its 800 V rating and 400 mJ avalanche energy make it suitable for motor drive snubberless designs where inductive kickback must be safely absorbed by the MOSFET itself. The TO-247 through-hole package allows bolted attachment to a heatsink, facilitating thermal management in industrial inverters and EV charger onboard chargers.
What are the specifications of STW12NK80Z?
| Factory Lead Time | 16Weeks |
| YTEOL | 6.4 |
| Avalanche Energy Rating (Eas) | 400mJ |
| Configuration | SINGLE WITH BUILT-IN DIODE |
| DS Breakdown Voltage-Min | 800V |
| Drain Current-Max (ID) | 10.5A |
| Drain-source On Resistance-Max | 0.75Ω |
| FET Technology | METAL-OXIDE SEMICONDUCTOR |
| JEDEC-95 Code | TO-247AC |
| JESD-30 Code | R-PSFM-T3 |
| JESD-609 Code | e3 |
| Number of Elements | 1 |
| Operating Mode | ENHANCEMENT MODE |
| Package Body Material | PLASTIC/EPOXY |
| Package Shape | RECTANGULAR |
| Package Style | FLANGE MOUNT |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED |
| Polarity/Channel Type | N-CHANNEL |
| Power Dissipation-Max (Abs) | 190W |
| Pulsed Drain Current-Max (IDM) | 42A |
| Qualification Status | Not Qualified |
| Surface Mount | NO |
| Terminal Finish | Matte Tin (Sn) |
| Terminal Form | THROUGH-HOLE |
| Terminal Position | SINGLE |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
| Transistor Application | SWITCHING |
| Transistor Element Material | SILICON |
| Package | Transistor Outline, Vertical |
Compliance & Regulatory
| RoHS Status | Compliant |
| Lead-Free | Yes (Pb-Free) |
| ECCN | EAR99 |
| Country of Origin | Mainland China |
Where can I find the STW12NK80Z datasheet?
STW12NK80Z Datasheet DownloadOfficial datasheet from STMicroelectronics
What are equivalent replacements for STW12NK80Z?
No known alternates. Submit an RFQ and our team can suggest alternatives.
Frequently Asked Questions
What drain current and on-resistance does the STW12NK80Z provide at 10A operation?
The STW12NK80Z is rated for 10.5 A continuous drain current with a maximum Rds(on) of 0.75 Ω at Vgs = 10 V. At 10 A, the conduction loss is approximately 75 W, requiring heatsinking to maintain junction temperature below 150°C in continuous operation at full load.
How does the 400 mJ avalanche energy rating of the STW12NK80Z benefit snubberless flyback converter designs?
In a snubberless flyback design, the STW12NK80Z must absorb the transformer leakage inductance energy at every switching cycle. With a 400 mJ Eas rating, it safely handles leakage spikes from transformers with up to several hundred µH of leakage inductance at switching currents of 10 A without avalanche breakdown, eliminating the need for an RC or transient voltage suppressor snubber network.
For a 300 W PFC boost stage running from 85 VAC to 265 VAC, why is the 800 V rating of the STW12NK80Z appropriate?
Rectified 265 VAC produces approximately 375 V DC bus. With PFC boost overshoot and line transients, the switch node can spike to 550 V to 650 V. The STW12NK80Z's 800 V breakdown provides a 150 V to 250 V margin above worst-case transients, meeting IEC 61000-4-5 surge immunity requirements without exceeding the device's safe operating area.
How does the TO-247 package of the STW12NK80Z simplify thermal management compared to a D2PAK SMD alternative?
The TO-247AC package allows direct mounting to an external aluminium heatsink with a single bolt, achieving junction-to-case thermal resistance (Rth,JC) of approximately 0.5°C/W. This enables dissipation of over 100 W at 25°C ambient with a standard 1°C/W heatsink, whereas a D2PAK soldered to a PCB is typically limited to 30 W to 50 W without additional thermal vias and copper pours.
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About STMicroelectronics
STMicroelectronics is a global semiconductor leader serving customers across the spectrum of electronics applications. ST's products are found in a wide range of applications including automotive, industrial, personal electronics, and communications.
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 1+ | $5.9400 | $5.94 |
| 10+ | $4.1400 | $41.40 |
| 100+ | $3.4700 | $347.00 |
| 120+ | $1.9672 | $236.06 |
| 510+ | $1.9474 | $993.17 |
| 1020+ | $1.9280 | $1966.56 |
In Stock · 24h Response · Worldwide Shipping
Response within 24 hours · Worldwide shipping
“Their engineering team helped us find a pin-compatible alternative when our original MCU went EOL.”
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