STW12NK80Z STMicroelectronics MOSFET (N-Channel) (Transistor Outline, Vertical) In Stock

STMicroelectronics STW12NK80Z is an 800 V N-channel power MOSFET in TO-247 package with 10.5 A drain current and 0.75 Ω Rds(on). Features 400 mJ avalanche energy rating. Available from stock worldwide.

ACTIVEMOSFET (N-Channel)Verified May 2026
Package / Visual Reference
STW12NK80ZTransistor Outline, Vertical
Quick Facts
Manufacturer
STMicroelectronics
Package
Transistor Outline, Vertical
Pin Count
3
Lifecycle
ACTIVE
Category
MOSFET (N-Channel)
Price
From $1.9280(MOQ 1)
Temp Range
?°C to 150.0°C
RoHS
Compliant
Lead Time
3–7 business days
Shipping
DHL Express · Worldwide

Key Features

  • 800 V drain-source breakdown voltage enabling safe operation in high-voltage flyback, PFC, and half-bridge converter topologies
  • 10.5 A continuous drain current with 0.75 Ω max Rds(on) balancing conduction loss and voltage handling in a through-hole TO-247AC package
  • 400 mJ avalanche energy rating (Eas) providing robust unclamped inductive switching ruggedness for inductive motor and transformer loads

Applications

The STW12NK80Z is designed for high-voltage power conversion applications including offline flyback SMPS, boost PFC stages, and half-bridge inverters operating from rectified 230 VAC or 400 V DC bus. Its 800 V rating and 400 mJ avalanche energy make it suitable for motor drive snubberless designs where inductive kickback must be safely absorbed by the MOSFET itself. The TO-247 through-hole package allows bolted attachment to a heatsink, facilitating thermal management in industrial inverters and EV charger onboard chargers.

Specifications

Factory Lead Time16Weeks
YTEOL6.4
Avalanche Energy Rating (Eas)400mJ
ConfigurationSINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min800V
Drain Current-Max (ID)10.5A
Drain-source On Resistance-Max0.75Ω
FET TechnologyMETAL-OXIDE SEMICONDUCTOR
JEDEC-95 CodeTO-247AC
JESD-30 CodeR-PSFM-T3
JESD-609 Codee3
Number of Elements1
Operating ModeENHANCEMENT MODE
Package Body MaterialPLASTIC/EPOXY
Package ShapeRECTANGULAR
Package StyleFLANGE MOUNT
Peak Reflow Temperature (Cel)NOT SPECIFIED
Polarity/Channel TypeN-CHANNEL
Power Dissipation-Max (Abs)190W
Pulsed Drain Current-Max (IDM)42A
Qualification StatusNot Qualified
Surface MountNO
Terminal FinishMatte Tin (Sn)
Terminal FormTHROUGH-HOLE
Terminal PositionSINGLE
Time@Peak Reflow Temperature-Max (s)NOT SPECIFIED
Transistor ApplicationSWITCHING
Transistor Element MaterialSILICON
PackageTransistor Outline, Vertical

Compliance & Regulatory

RoHS StatusCompliant
Lead-FreeYes (Pb-Free)
ECCNEAR99
Country of OriginMainland China

Datasheet

STW12NK80Z Datasheet Download

Official datasheet from STMicroelectronics

Alternate & Equivalent Parts

No known alternates. Submit an RFQ and our team can suggest alternatives.

Frequently Asked Questions

What drain current and on-resistance does the STW12NK80Z provide at 10A operation?

The STW12NK80Z is rated for 10.5 A continuous drain current with a maximum Rds(on) of 0.75 Ω at Vgs = 10 V. At 10 A, the conduction loss is approximately 75 W, requiring heatsinking to maintain junction temperature below 150°C in continuous operation at full load.

How does the 400 mJ avalanche energy rating of the STW12NK80Z benefit snubberless flyback converter designs?

In a snubberless flyback design, the STW12NK80Z must absorb the transformer leakage inductance energy at every switching cycle. With a 400 mJ Eas rating, it safely handles leakage spikes from transformers with up to several hundred µH of leakage inductance at switching currents of 10 A without avalanche breakdown, eliminating the need for an RC or transient voltage suppressor snubber network.

For a 300 W PFC boost stage running from 85 VAC to 265 VAC, why is the 800 V rating of the STW12NK80Z appropriate?

Rectified 265 VAC produces approximately 375 V DC bus. With PFC boost overshoot and line transients, the switch node can spike to 550 V to 650 V. The STW12NK80Z's 800 V breakdown provides a 150 V to 250 V margin above worst-case transients, meeting IEC 61000-4-5 surge immunity requirements without exceeding the device's safe operating area.

How does the TO-247 package of the STW12NK80Z simplify thermal management compared to a D2PAK SMD alternative?

The TO-247AC package allows direct mounting to an external aluminium heatsink with a single bolt, achieving junction-to-case thermal resistance (Rth,JC) of approximately 0.5°C/W. This enables dissipation of over 100 W at 25°C ambient with a standard 1°C/W heatsink, whereas a D2PAK soldered to a PCB is typically limited to 30 W to 50 W without additional thermal vias and copper pours.

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About STMicroelectronics

STMicroelectronics is a global semiconductor leader serving customers across the spectrum of electronics applications. ST's products are found in a wide range of applications including automotive, industrial, personal electronics, and communications.

AvailabilityIn Stock
Reference Price (USD)
From $1.9280
Buy from 1pc · Factory-direct pricing
Qty.Unit PriceExt. Price
1+$5.9400$5.94
10+$4.1400$41.40
100+$3.4700$347.00
120+$1.9672$236.06
510+$1.9474$993.17
1020+$1.9280$1966.56
pcs
Unit price: $5.9400 · Total: $5.94

In Stock · 24h Response · Worldwide Shipping

Lead Time3-7 business days
MOQFrom 1 piece
ShippingDHL / FedEx / UPS
OriginChina (Authorized)

Response within 24 hours · Worldwide shipping

Their engineering team helped us find a pin-compatible alternative when our original MCU went EOL.

MR
Marco Rossi
CTO, AutoDrive Systems, Italy