STV270N4F3 STMicroelectronics Integrated Circuit (Small Outline Packages) In Stock
STV270N4F3 is an N-channel 40 V, 270 A STripFET F3 power MOSFET with 1.25 mΩ on-resistance by STMicroelectronics. Key specs: 1000 mJ avalanche energy, 50 pF feedback capacitance, 10-pin PowerSO package. From $3.20, in stock with worldwide shipping.
- Manufacturer
- STMicroelectronics
- Package
- Small Outline Packages
- Pin Count
- 10
- Lifecycle
- OBSOLETE
- Datasheet
- STV270N4F3 Datasheet PDF
- Category
- Integrated Circuit
- Price
- From $6.3300(MOQ 25)
- Temp Range
- -55.0°C to 175.0°C
- RoHS
- Compliant
- Lead Time
- 3–7 business days
- Shipping
- DHL Express · Worldwide
Key Features
- Ultra-low 1.25 mΩ typical RDS(on) at 270 A drain current minimizes conduction losses in high-current synchronous rectifier and load-switch applications
- 1000 mJ avalanche energy rating (Eas) provides robust protection against unclamped inductive switching events in motor drive and DC-DC converter circuits
- STripFET F3 technology with built-in body diode and 10-pin PowerSO package enables high-density 40 V power stage designs up to 270 A
Applications
STV270N4F3 is used as a high-current synchronous rectifier in server power supplies and point-of-load converters where 40 V bus voltages and 200 A to 270 A peak currents demand the lowest possible RDS(on). It also suits DC motor drive H-bridges in robotic joints and EV auxiliary drives where the 1000 mJ avalanche rating absorbs kickback energy from inductive loads. The PowerSO-10 package enables compact high-density power stage layouts in battery management and solar MPPT charger boards.
Specifications
| YTEOL | 0 |
| Avalanche Energy Rating (Eas) | 1000mJ |
| Case Connection | DRAIN |
| Configuration | SINGLE WITH BUILT-IN DIODE |
| DS Breakdown Voltage-Min | 40V |
| Drain Current-Max (ID) | 270A |
| Drain-source On Resistance-Max | 0.0015Ω |
| FET Technology | METAL-OXIDE SEMICONDUCTOR |
| Feedback Cap-Max (Crss) | 50pF |
| JESD-30 Code | R-PDSO-G10 |
| JESD-609 Code | e3 |
| Number of Elements | 1 |
| Operating Mode | ENHANCEMENT MODE |
| Package Body Material | PLASTIC/EPOXY |
| Package Shape | RECTANGULAR |
| Package Style | SMALL OUTLINE |
| Peak Reflow Temperature (Cel) | 250 |
| Polarity/Channel Type | N-CHANNEL |
| Power Dissipation-Max (Abs) | 300W |
| Pulsed Drain Current-Max (IDM) | 1080A |
| Qualification Status | Not Qualified |
| Surface Mount | YES |
| Terminal Finish | Matte Tin (Sn) - annealed |
| Terminal Form | GULL WING |
| Terminal Position | DUAL |
| Time@Peak Reflow Temperature-Max (s) | 30 |
| Transistor Application | SWITCHING |
| Transistor Element Material | SILICON |
| Package | Small Outline Packages |
Compliance & Regulatory
| RoHS Status | Compliant |
| Lead-Free | Yes (Pb-Free) |
| Moisture Sensitivity Level | MSL 3 |
| ECCN | EAR99 |
| Country of Origin | Morocco |
Alternate & Equivalent Parts
No known alternates. Submit an RFQ and our team can suggest alternatives.
Frequently Asked Questions
What is the RDS(on) and maximum drain current of STV270N4F3 at its rated operating conditions?
STV270N4F3 has a typical RDS(on) of 1.25 mΩ and a maximum of 1.5 mΩ at VGS = 10 V, sustaining up to 270 A continuous drain current. At 270 A, the 1.5 mΩ worst-case resistance dissipates approximately 109 W of conduction loss, making it one of the lowest-loss 40 V MOSFETs available for server PSU synchronous rectifier stages.
How does the 1000 mJ avalanche energy rating benefit a DC motor drive application using STV270N4F3?
When a DC motor is braked abruptly, the collapsing magnetic field generates a voltage spike that can exceed the 40 V VDS rating. The STV270N4F3's 1000 mJ single-pulse avalanche energy capability absorbs these inductive kickback events without external snubber clamps, reducing component count and board area in robotic arm and conveyor motor drives operating at 24 V to 36 V bus voltages.
What package does STV270N4F3 use and how does it handle thermal dissipation at high current?
STV270N4F3 uses a 10-pin PowerSO package with a large exposed drain pad on the underside, providing a thermal resistance of approximately 1°C/W junction-to-case. Mounted to a 1 cm² copper pour on a 2-oz PCB, it can dissipate over 80 W before reaching the 150°C junction temperature limit, enabling 200 A continuous operation in synchronous buck converters with forced-air cooling.
When is STV270N4F3 a stronger choice over discrete TO-247 MOSFETs for a 40 V power stage?
STV270N4F3 is preferred over parallel TO-247 devices when PCB height must stay under 3 mm, as the PowerSO-10 package is only 2.3 mm tall versus 4.5 mm for a TO-247. For the same 270 A current level, 2 parallel TO-247 MOSFETs each rated 150 A occupy roughly 3 times more PCB area than a single STV270N4F3, making the STripFET F3 device the better fit in slim server blade and automotive inverter designs.
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| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 25+ | $6.3300 | $158.25 |
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