STTH812G-TRAlternatives & Equivalent Parts

About STTH812G-TR

STTH812G-TR is a Diode component manufactured by STMicroelectronics. It comes in a Other package. Below you'll find known alternative and equivalent parts that can serve as replacements in your design.

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Specification Comparison

ParameterSTTH812G-TRSourceIRFU120NPBFSFH618A-4
ManufacturerSTMicroelectronicsInternational RectifierVishay
Package TypeOtherTransistor Outline, VerticalDual-In-Line Packages
Pin Count334
Temperature Range~ 175.0°C~ 175.0°C-55.0°C ~ 100.0°C
Price$0.3552$0.2976$0.1775
StockIn StockIn StockIn Stock
LifecycleACTIVEOBSOLETEACTIVE
Electrical Parameters
Factory Lead Time25 Weeks10 Weeks
YTEOL6.606
Additional FeatureFREE WHEELING DIODE, LOW LEAKAGE CURRENT, SNUBBER DIODE, HIGH RELIABILITYAVALANCHE RATED
ApplicationHIGH VOLTAGE ULTRA FAST SOFT RECOVERY
Case ConnectionCATHODEDRAIN
ConfigurationSINGLESINGLE WITH BUILT-IN DIODESINGLE
Diode Element MaterialSILICON
Diode TypeRECTIFIER DIODE
Forward Voltage-Max (VF)2.2 V
JESD-30 CodeR-PSSO-G2R-PSIP-T3
JESD-609 Codee3e3e3
Non-rep Pk Forward Current-Max80 A
Number of Elements111
Number of Phases1
Output Current-Max8 A
Package Body MaterialPLASTIC/EPOXYPLASTIC/EPOXY
Package ShapeRECTANGULARRECTANGULAR
Package StyleSMALL OUTLINEIN-LINE
Peak Reflow Temperature (Cel)245260
Qualification StatusNot QualifiedNot Qualified
Rep Pk Reverse Voltage-Max1200 V
Reverse Current-Max8 µA
Reverse Recovery Time-Max0.1 µs
Reverse Test Voltage1200 V
Surface MountYESNO
Terminal FinishMatte Tin (Sn)Matte Tin (Sn) - with Nickel (Ni) barrierMatte Tin (Sn)
Terminal FormGULL WINGTHROUGH-HOLE
Terminal PositionSINGLESINGLE
Time@Peak Reflow Temperature-Max (s)3030
Avalanche Energy Rating (Eas)91 mJ
DS Breakdown Voltage-Min100 V
Drain Current-Max (ID)9.4 A
Drain-source On Resistance-Max0.21 Ω
FET TechnologyMETAL-OXIDE SEMICONDUCTOR
JEDEC-95 CodeTO-251AA
Operating ModeENHANCEMENT MODE
Polarity/Channel TypeN-CHANNEL
Power Dissipation-Max (Abs)42 W
Pulsed Drain Current-Max (IDM)38 A
Transistor ApplicationSWITCHING
Transistor Element MaterialSILICON
Pbfree CodeYes
Coll-Emtr Bkdn Voltage-Min55 V
Current Transfer Ratio-Nom200%
Dark Current-Max200 nA
Forward Current-Max0.05 A
Isolation Voltage-Max5300 V
Optoelectronic Device TypeTRANSISTOR OUTPUT OPTOCOUPLER

Cells highlighted in yellow indicate differing values across parts. Always verify with official datasheets before substitution.

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Get one quote covering all 2 alternatives for STTH812G-TR — response within 24 hours.

Quick Links

Why Look for Alternatives?

Finding alternatives for STTH812G-TR is essential for supply chain resilience. Component shortages, long lead times, and end-of-life notices can disrupt production schedules. Having verified alternative parts ensures your designs remain manufacturable.

When evaluating STTH812G-TR replacements, consider key parameters such as package compatibility, electrical specifications, and operating temperature range. Our engineering team can help verify pin-to-pin compatibility for your specific application.

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FAQ

What is equivalent to STTH812G-TR?

Known equivalents for STTH812G-TR include IRFU120NPBF, SFH618A-4. Contact FindMyChip for a full compatibility analysis for your specific application.

Can I use a different manufacturer's part instead of STTH812G-TR?

In many cases, yes. Cross-manufacturer alternatives exist for most standard components. However, always verify pin compatibility, electrical specs, and package dimensions before substituting in production.

How do I verify STTH812G-TR alternatives?

Compare the datasheet specifications including pinout, voltage ratings, timing parameters, and package dimensions. FindMyChip's engineering team can help with compatibility verification — submit an RFQ to get started.