STS8C5H30L STMicroelectronics Integrated Circuit (Small Outline Packages) In Stock

STMicroelectronics STS8C5H30L is a dual N-channel MOSFET with built-in diodes in an 8-pin SOP package, rated at 30 V drain-source breakdown voltage and 8 A drain current per element. It features an on-resistance of 25 mΩ and a 20 pF feedback capacitance, enabling efficient synchronous rectification and half-bridge switching. Available from stock with worldwide shipping.

ACTIVEIntegrated CircuitVerified May 2026
Package / Visual Reference
STS8C5H30LSmall Outline Packages
Quick Facts
Manufacturer
STMicroelectronics
Package
Small Outline Packages
Pin Count
8
Lifecycle
ACTIVE
Category
Integrated Circuit
Price
From $0.2277(MOQ 1)
Temp Range
?°C to 150.0°C
RoHS
Compliant
Lead Time
3–7 business days
Shipping
DHL Express · Worldwide

Key Features

  • Dual N-channel MOSFET configuration with 2 independent elements and built-in diodes in a single SOP-8 package enables compact half-bridge and synchronous buck converter designs
  • 30 V drain-source breakdown voltage and 8 A maximum drain current per element support efficient power switching in 5 V to 24 V bus power stages
  • Ultra-low 25 mΩ maximum drain-source on-resistance minimizes conduction losses and reduces thermal stress in high-current switching applications
  • 20 pF maximum feedback capacitance (Crss) reduces gate drive charge requirements and lowers switching losses at high frequencies above 100 kHz

Applications

The STS8C5H30L is optimized for synchronous buck converters and half-bridge power stages in DC-DC regulators supplying up to 8 A at output voltages from 1 V to 24 V. Its dual MOSFET configuration with 25 mΩ on-resistance and built-in body diodes simplifies PCB layout for motor H-bridge circuits in low-voltage brushed DC and stepper motor drivers. The 8-pin SOP package and 30 V rating also make it a practical choice for load switching and reverse-polarity protection in automotive accessories and battery-powered portable equipment.

Specifications

YTEOL7
ConfigurationSEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
DS Breakdown Voltage-Min30V
Drain Current-Max (ID)8A
Drain-source On Resistance-Max0.025Ω
FET TechnologyMETAL-OXIDE SEMICONDUCTOR
Feedback Cap-Max (Crss)20pF
JESD-30 CodeR-PDSO-G8
JESD-609 Codee3
Number of Elements2
Operating ModeENHANCEMENT MODE
Package Body MaterialPLASTIC/EPOXY
Package ShapeRECTANGULAR
Package StyleSMALL OUTLINE
Peak Reflow Temperature (Cel)260
Polarity/Channel TypeN-CHANNEL AND P-CHANNEL
Power Dissipation-Max (Abs)2W
Qualification StatusNot Qualified
Surface MountYES
Terminal FinishMATTE TIN
Terminal FormGULL WING
Terminal PositionDUAL
Time@Peak Reflow Temperature-Max (s)30
Transistor ApplicationSWITCHING
Transistor Element MaterialSILICON
PackageSmall Outline Packages

Compliance & Regulatory

RoHS StatusCompliant
Lead-FreeYes (Pb-Free)
Moisture Sensitivity LevelMSL 1
ECCNEAR99
Country of OriginMainland China

Datasheet

STS8C5H30L Datasheet Download

Official datasheet from STMicroelectronics

Alternate & Equivalent Parts

No known alternates. Submit an RFQ and our team can suggest alternatives.

Frequently Asked Questions

What is the drain-source on-resistance of each MOSFET element in STS8C5H30L, and how does it affect efficiency at 8 A?

Each element in the STS8C5H30L has a maximum drain-source on-resistance (RDS(on)) of 25 mΩ. At 8 A drain current, the conduction power loss per element is I² × RDS(on) = 64 × 0.025 = 1.6 W, which is manageable with the SOP-8 thermal resistance, making it suitable for continuous 8 A switching in buck converters and motor drivers.

How does the 30 V breakdown voltage of STS8C5H30L fit into a 24 V bus synchronous rectifier design?

With a 30 V minimum drain-source breakdown voltage, the STS8C5H30L provides a 6 V margin above a 24 V bus, which is adequate when inductive voltage spikes are controlled to under 6 V by gate-drive snubbers. For designs with higher ringing, a 40 V or 60 V rated device would provide a safer margin above the 24 V rail.

Can the STS8C5H30L be used as a half-bridge driver for a brushed DC motor at 5 A continuous current?

Yes, the STS8C5H30L is well suited for a single-axis brushed DC motor H-bridge at 5 A continuous current. Its 8 A drain current rating provides 60% headroom above the 5 A load, and the 25 mΩ RDS(on) yields only 0.625 W conduction loss per channel at 5 A. The 2-element package with built-in diodes allows both high-side and low-side switches to fit in one SOP-8 footprint.

What is the feedback capacitance (Crss) of STS8C5H30L and how does it influence gate drive requirements at 200 kHz switching?

The STS8C5H30L has a maximum feedback capacitance (Crss) of 20 pF. At 200 kHz and a 24 V drain swing, the Miller charge contribution is approximately Crss × ΔVDS = 20 pF × 24 V = 480 pC per switch event, requiring a gate driver capable of sourcing at least 96 mA peak current to switch in under 5 ns and limit switching losses at 200 kHz.

Related Guides

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About STMicroelectronics

STMicroelectronics is a global semiconductor leader serving customers across the spectrum of electronics applications. ST's products are found in a wide range of applications including automotive, industrial, personal electronics, and communications.

AvailabilityIn Stock
Reference Price (USD)
From $0.2277
Buy from 1pc · Factory-direct pricing
Qty.Unit PriceExt. Price
1+$0.2277$0.23
pcs
Unit price: $0.2277 · Total: $0.23

In Stock · 24h Response · Worldwide Shipping

Lead Time3-7 business days
MOQFrom 1 piece
ShippingDHL / FedEx / UPS
OriginChina (Authorized)

Response within 24 hours · Worldwide shipping

Their engineering team helped us find a pin-compatible alternative when our original MCU went EOL.

MR
Marco Rossi
CTO, AutoDrive Systems, Italy