STS8C5H30L STMicroelectronics Integrated Circuit (Small Outline Packages) In Stock
STMicroelectronics STS8C5H30L is a dual N-channel MOSFET with built-in diodes in an 8-pin SOP package, rated at 30 V drain-source breakdown voltage and 8 A drain current per element. It features an on-resistance of 25 mΩ and a 20 pF feedback capacitance, enabling efficient synchronous rectification and half-bridge switching. Available from stock with worldwide shipping.
- Manufacturer
- STMicroelectronics
- Package
- Small Outline Packages
- Pin Count
- 8
- Lifecycle
- ACTIVE
- Datasheet
- STS8C5H30L Datasheet PDF
- Category
- Integrated Circuit
- Price
- From $0.2277(MOQ 1)
- Temp Range
- ?°C to 150.0°C
- RoHS
- Compliant
- Lead Time
- 3–7 business days
- Shipping
- DHL Express · Worldwide
Key Features
- Dual N-channel MOSFET configuration with 2 independent elements and built-in diodes in a single SOP-8 package enables compact half-bridge and synchronous buck converter designs
- 30 V drain-source breakdown voltage and 8 A maximum drain current per element support efficient power switching in 5 V to 24 V bus power stages
- Ultra-low 25 mΩ maximum drain-source on-resistance minimizes conduction losses and reduces thermal stress in high-current switching applications
- 20 pF maximum feedback capacitance (Crss) reduces gate drive charge requirements and lowers switching losses at high frequencies above 100 kHz
Applications
The STS8C5H30L is optimized for synchronous buck converters and half-bridge power stages in DC-DC regulators supplying up to 8 A at output voltages from 1 V to 24 V. Its dual MOSFET configuration with 25 mΩ on-resistance and built-in body diodes simplifies PCB layout for motor H-bridge circuits in low-voltage brushed DC and stepper motor drivers. The 8-pin SOP package and 30 V rating also make it a practical choice for load switching and reverse-polarity protection in automotive accessories and battery-powered portable equipment.
Specifications
| YTEOL | 7 |
| Configuration | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE |
| DS Breakdown Voltage-Min | 30V |
| Drain Current-Max (ID) | 8A |
| Drain-source On Resistance-Max | 0.025Ω |
| FET Technology | METAL-OXIDE SEMICONDUCTOR |
| Feedback Cap-Max (Crss) | 20pF |
| JESD-30 Code | R-PDSO-G8 |
| JESD-609 Code | e3 |
| Number of Elements | 2 |
| Operating Mode | ENHANCEMENT MODE |
| Package Body Material | PLASTIC/EPOXY |
| Package Shape | RECTANGULAR |
| Package Style | SMALL OUTLINE |
| Peak Reflow Temperature (Cel) | 260 |
| Polarity/Channel Type | N-CHANNEL AND P-CHANNEL |
| Power Dissipation-Max (Abs) | 2W |
| Qualification Status | Not Qualified |
| Surface Mount | YES |
| Terminal Finish | MATTE TIN |
| Terminal Form | GULL WING |
| Terminal Position | DUAL |
| Time@Peak Reflow Temperature-Max (s) | 30 |
| Transistor Application | SWITCHING |
| Transistor Element Material | SILICON |
| Package | Small Outline Packages |
Compliance & Regulatory
| RoHS Status | Compliant |
| Lead-Free | Yes (Pb-Free) |
| Moisture Sensitivity Level | MSL 1 |
| ECCN | EAR99 |
| Country of Origin | Mainland China |
Alternate & Equivalent Parts
No known alternates. Submit an RFQ and our team can suggest alternatives.
Frequently Asked Questions
What is the drain-source on-resistance of each MOSFET element in STS8C5H30L, and how does it affect efficiency at 8 A?
Each element in the STS8C5H30L has a maximum drain-source on-resistance (RDS(on)) of 25 mΩ. At 8 A drain current, the conduction power loss per element is I² × RDS(on) = 64 × 0.025 = 1.6 W, which is manageable with the SOP-8 thermal resistance, making it suitable for continuous 8 A switching in buck converters and motor drivers.
How does the 30 V breakdown voltage of STS8C5H30L fit into a 24 V bus synchronous rectifier design?
With a 30 V minimum drain-source breakdown voltage, the STS8C5H30L provides a 6 V margin above a 24 V bus, which is adequate when inductive voltage spikes are controlled to under 6 V by gate-drive snubbers. For designs with higher ringing, a 40 V or 60 V rated device would provide a safer margin above the 24 V rail.
Can the STS8C5H30L be used as a half-bridge driver for a brushed DC motor at 5 A continuous current?
Yes, the STS8C5H30L is well suited for a single-axis brushed DC motor H-bridge at 5 A continuous current. Its 8 A drain current rating provides 60% headroom above the 5 A load, and the 25 mΩ RDS(on) yields only 0.625 W conduction loss per channel at 5 A. The 2-element package with built-in diodes allows both high-side and low-side switches to fit in one SOP-8 footprint.
What is the feedback capacitance (Crss) of STS8C5H30L and how does it influence gate drive requirements at 200 kHz switching?
The STS8C5H30L has a maximum feedback capacitance (Crss) of 20 pF. At 200 kHz and a 24 V drain swing, the Miller charge contribution is approximately Crss × ΔVDS = 20 pF × 24 V = 480 pC per switch event, requiring a gate driver capable of sourcing at least 96 mA peak current to switch in under 5 ns and limit switching losses at 200 kHz.
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| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 1+ | $0.2277 | $0.23 |
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