STS8C5H30L STMicroelectronics Integrated Circuit (Small Outline Packages) In Stock
STMicroelectronics STS8C5H30L is a dual N-channel MOSFET with built-in diodes in an 8-pin SOP package, rated at 30 V drain-source breakdown voltage and 8 A drain current per element. It features an on-resistance of 25 mΩ and a 20 pF feedback capacitance, enabling efficient synchronous rectification and half-bridge switching. Available from stock with worldwide shipping.
- Manufacturer
- STMicroelectronics
- Package
- Small Outline Packages
- Pin Count
- 8
- Lifecycle
- ACTIVE
- Datasheet
- STS8C5H30L Datasheet PDF
- Category
- Integrated Circuit
- Price
- From $0.2277(MOQ 1)
- Temp Range
- ?°C to 150.0°C
- RoHS
- Compliant
- Lead Time
- 3–7 business days
- Shipping
- DHL Express · Worldwide
What are the key features of STS8C5H30L?
- Dual N-channel MOSFET configuration with 2 independent elements and built-in diodes in a single SOP-8 package enables compact half-bridge and synchronous buck converter designs
- 30 V drain-source breakdown voltage and 8 A maximum drain current per element support efficient power switching in 5 V to 24 V bus power stages
- Ultra-low 25 mΩ maximum drain-source on-resistance minimizes conduction losses and reduces thermal stress in high-current switching applications
- 20 pF maximum feedback capacitance (Crss) reduces gate drive charge requirements and lowers switching losses at high frequencies above 100 kHz
What is STS8C5H30L used for?
The STS8C5H30L is optimized for synchronous buck converters and half-bridge power stages in DC-DC regulators supplying up to 8 A at output voltages from 1 V to 24 V. Its dual MOSFET configuration with 25 mΩ on-resistance and built-in body diodes simplifies PCB layout for motor H-bridge circuits in low-voltage brushed DC and stepper motor drivers. The 8-pin SOP package and 30 V rating also make it a practical choice for load switching and reverse-polarity protection in automotive accessories and battery-powered portable equipment.
What are the specifications of STS8C5H30L?
| YTEOL | 7 |
| Configuration | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE |
| DS Breakdown Voltage-Min | 30V |
| Drain Current-Max (ID) | 8A |
| Drain-source On Resistance-Max | 0.025Ω |
| FET Technology | METAL-OXIDE SEMICONDUCTOR |
| Feedback Cap-Max (Crss) | 20pF |
| JESD-30 Code | R-PDSO-G8 |
| JESD-609 Code | e3 |
| Number of Elements | 2 |
| Operating Mode | ENHANCEMENT MODE |
| Package Body Material | PLASTIC/EPOXY |
| Package Shape | RECTANGULAR |
| Package Style | SMALL OUTLINE |
| Peak Reflow Temperature (Cel) | 260 |
| Polarity/Channel Type | N-CHANNEL AND P-CHANNEL |
| Power Dissipation-Max (Abs) | 2W |
| Qualification Status | Not Qualified |
| Surface Mount | YES |
| Terminal Finish | MATTE TIN |
| Terminal Form | GULL WING |
| Terminal Position | DUAL |
| Time@Peak Reflow Temperature-Max (s) | 30 |
| Transistor Application | SWITCHING |
| Transistor Element Material | SILICON |
| Package | Small Outline Packages |
Compliance & Regulatory
| RoHS Status | Compliant |
| Lead-Free | Yes (Pb-Free) |
| Moisture Sensitivity Level | MSL 1 |
| ECCN | EAR99 |
| Country of Origin | Mainland China |
Where can I find the STS8C5H30L datasheet?
STS8C5H30L Datasheet DownloadOfficial datasheet from STMicroelectronics
What are equivalent replacements for STS8C5H30L?
No known alternates. Submit an RFQ and our team can suggest alternatives.
Frequently Asked Questions
What is the drain-source on-resistance of each MOSFET element in STS8C5H30L, and how does it affect efficiency at 8 A?
Each element in the STS8C5H30L has a maximum drain-source on-resistance (RDS(on)) of 25 mΩ. At 8 A drain current, the conduction power loss per element is I² × RDS(on) = 64 × 0.025 = 1.6 W, which is manageable with the SOP-8 thermal resistance, making it suitable for continuous 8 A switching in buck converters and motor drivers.
How does the 30 V breakdown voltage of STS8C5H30L fit into a 24 V bus synchronous rectifier design?
With a 30 V minimum drain-source breakdown voltage, the STS8C5H30L provides a 6 V margin above a 24 V bus, which is adequate when inductive voltage spikes are controlled to under 6 V by gate-drive snubbers. For designs with higher ringing, a 40 V or 60 V rated device would provide a safer margin above the 24 V rail.
Can the STS8C5H30L be used as a half-bridge driver for a brushed DC motor at 5 A continuous current?
Yes, the STS8C5H30L is well suited for a single-axis brushed DC motor H-bridge at 5 A continuous current. Its 8 A drain current rating provides 60% headroom above the 5 A load, and the 25 mΩ RDS(on) yields only 0.625 W conduction loss per channel at 5 A. The 2-element package with built-in diodes allows both high-side and low-side switches to fit in one SOP-8 footprint.
What is the feedback capacitance (Crss) of STS8C5H30L and how does it influence gate drive requirements at 200 kHz switching?
The STS8C5H30L has a maximum feedback capacitance (Crss) of 20 pF. At 200 kHz and a 24 V drain swing, the Miller charge contribution is approximately Crss × ΔVDS = 20 pF × 24 V = 480 pC per switch event, requiring a gate driver capable of sourcing at least 96 mA peak current to switch in under 5 ns and limit switching losses at 200 kHz.
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About STMicroelectronics
STMicroelectronics is a global semiconductor leader serving customers across the spectrum of electronics applications. ST's products are found in a wide range of applications including automotive, industrial, personal electronics, and communications.
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 1+ | $0.2277 | $0.23 |
In Stock · 24h Response · Worldwide Shipping
Response within 24 hours · Worldwide shipping
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