STRH40P10HYG STMicroelectronics Integrated Circuit (Transistor Outline, Vertical) In Stock
STMicroelectronics STRH40P10HYG is a radiation-hardened P-channel power MOSFET rated at 100 V drain-source and 34 A drain current, with an on-resistance of 75 mΩ and 1133 mJ avalanche energy. Packaged in TO-254AA for high-reliability space and aerospace power management applications.
- Manufacturer
- STMicroelectronics
- Package
- Transistor Outline, Vertical
- Pin Count
- 3
- Lifecycle
- ACTIVE
- Datasheet
- STRH40P10HYG Datasheet PDF
- Category
- Integrated Circuit
- Temp Range
- -55.0°C to 150.0°C
- RoHS
- Compliant
- Lead Time
- 3–7 business days
- Shipping
- DHL Express · Worldwide
What are the key features of STRH40P10HYG?
- Radiation-hardened P-channel MOSFET for space and aerospace power systems
- 100 V drain-source breakdown voltage with 34 A continuous drain current
- 75 mΩ maximum on-resistance for low conduction loss at high current
- 1133 mJ avalanche energy rating for robust unclamped inductive switching
- 306 pF maximum feedback capacitance enabling faster gate drive designs
- Single device with built-in body diode in TO-254AA vertical package
What is STRH40P10HYG used for?
STRH40P10HYG is designed for satellite power distribution units, spacecraft battery charge controllers, and high-reliability load switching circuits where radiation tolerance, low RDS(on), and high avalanche energy are required. It is also used in military-grade DC-DC converters and orbital power management systems where long mission life and predictable electrical behavior under ionizing radiation are critical.
What are the specifications of STRH40P10HYG?
| YTEOL | 5.1 |
| Avalanche Energy Rating (Eas) | 1133mJ |
| Configuration | SINGLE WITH BUILT-IN DIODE |
| DS Breakdown Voltage-Min | 100V |
| Drain Current-Max (ID) | 34A |
| Drain-source On Resistance-Max | 0.075Ω |
| FET Technology | METAL-OXIDE SEMICONDUCTOR |
| Feedback Cap-Max (Crss) | 306pF |
| JEDEC-95 Code | TO-254AA |
| JESD-30 Code | S-MSFM-P3 |
| Number of Elements | 1 |
| Operating Mode | ENHANCEMENT MODE |
| Package Body Material | METAL |
| Package Shape | SQUARE |
| Package Style | FLANGE MOUNT |
| Polarity/Channel Type | P-CHANNEL |
| Power Dissipation-Max (Abs) | 176W |
| Pulsed Drain Current-Max (IDM) | 136A |
| Reference Standard | EUROPEAN SPACE AGENCY; RH - 100K Rad(Si) |
| Surface Mount | NO |
| Terminal Form | PIN/PEG |
| Terminal Position | SINGLE |
| Transistor Application | SWITCHING |
| Transistor Element Material | SILICON |
| Turn-off Time-Max (toff) | 205ns |
| Turn-on Time-Max (ton) | 76ns |
| Package | Transistor Outline, Vertical |
Compliance & Regulatory
| RoHS Status | Compliant |
| Lead-Free | Yes (Pb-Free) |
| ECCN | EAR99 |
| Country of Origin | France |
Where can I find the STRH40P10HYG datasheet?
STRH40P10HYG Datasheet DownloadOfficial datasheet from STMicroelectronics
What are equivalent replacements for STRH40P10HYG?
No known alternates. Submit an RFQ and our team can suggest alternatives.
Frequently Asked Questions
How does STRH40P10HYG's 75 mΩ on-resistance affect power dissipation at 34 A in a satellite power bus?
At the 34 A maximum drain current, the 75 mΩ RDS(on) yields a conduction loss of approximately 87 W (I² × R = 34² × 0.075). Thermal design must ensure the TO-254AA package junction temperature stays within rated limits, typically using a heat spreader or cold plate in spacecraft enclosures.
What avalanche energy can STRH40P10HYG absorb, and how does that help protect inductive loads in space power systems?
The device is rated for 1133 mJ of single-pulse avalanche energy (EAS), meaning it can safely clamp and absorb the energy stored in large inductors during turn-off events. This makes STRH40P10HYG well-suited for unsuppressed inductive loads in 100 V spacecraft power buses without needing additional external TVS protection.
Which package does STRH40P10HYG use, and does it support standard space-grade mounting practices?
STRH40P10HYG is housed in the TO-254AA vertical through-hole package (JEDEC-95 code TO-254AA), a common form factor in space and defense power modules that allows direct chassis mounting for heat sinking. The 3-lead metal package is compatible with radiation-tolerant PCB assembly processes and conformal coating.
For procurement of STRH40P10HYG in a satellite program, what lead time and lifecycle factors should buyers consider?
The YTEOL indicator for STRH40P10HYG is approximately 5 years, so programs with 10-year or longer procurement horizons should place lifetime buys or negotiate long-term agreements with STMicroelectronics authorized distributors early. Lead times for radiation-hardened devices often exceed 26 weeks, requiring advance planning in satellite production schedules.
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About STMicroelectronics
STMicroelectronics is a global semiconductor leader serving customers across the spectrum of electronics applications. ST's products are found in a wide range of applications including automotive, industrial, personal electronics, and communications.
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