STPSC8H065D STMicroelectronics Schottky Diode (Transistor Outline, Vertical) In Stock
The STPSC8H065D is a silicon carbide (SiC) Schottky rectifier diode from STMicroelectronics rated at 8 A forward current and 650 V reverse voltage with a maximum forward voltage of 1.75 V. Built in a single-configuration cathode-case TO-220AC package, it delivers near-zero reverse recovery charge for high-frequency power conversion. Available from authorized distributors with worldwide shipping.
- Manufacturer
- STMicroelectronics
- Package
- Transistor Outline, Vertical
- Pin Count
- 2
- Lifecycle
- ACTIVE
- Datasheet
- STPSC8H065D Datasheet PDF
- Category
- Schottky Diode
- Price
- From $0.9650(MOQ 1)
- Temp Range
- -40.0°C to 175.0°C
- RoHS
- Compliant
- Lead Time
- 3–7 business days
- Shipping
- DHL Express · Worldwide
Key Features
- Silicon carbide (SiC) construction eliminates reverse recovery charge, enabling switching frequencies above 100 kHz with minimal losses
- 650 V / 8 A ratings with 1.75 V maximum forward voltage optimized for PFC stages and boost converters
- Single-diode TO-220AC cathode-case package providing straightforward PCB integration and efficient heatsinking
Applications
The STPSC8H065D is ideal for power factor correction (PFC) boost stages, solar inverter freewheeling diodes, and secondary rectification in high-frequency SMPS operating up to 650 V. Its SiC construction virtually eliminates reverse recovery losses compared to silicon PiN diodes, enabling designs above 100 kHz with significantly reduced EMI and filter requirements. The TO-220AC package simplifies thermal design in industrial and renewable energy power modules.
Specifications
| Factory Lead Time | 19Weeks |
| YTEOL | 5.42 |
| Application | POWER |
| Case Connection | CATHODE |
| Configuration | SINGLE |
| Diode Element Material | SILICON CARBIDE |
| Diode Type | RECTIFIER DIODE |
| Forward Voltage-Max (VF) | 1.75V |
| JEDEC-95 Code | TO-220AC |
| JESD-30 Code | R-PSFM-T2 |
| JESD-609 Code | e3 |
| Non-rep Pk Forward Current-Max | 75A |
| Number of Elements | 1 |
| Number of Phases | 1 |
| Output Current-Max | 8A |
| Package Body Material | PLASTIC/EPOXY |
| Package Shape | RECTANGULAR |
| Package Style | FLANGE MOUNT |
| Rep Pk Reverse Voltage-Max | 650V |
| Reverse Current-Max | 80 µA |
| Reverse Test Voltage | 650V |
| Surface Mount | NO |
| Technology | SCHOTTKY |
| Terminal Finish | Matte Tin (Sn) - annealed |
| Terminal Form | THROUGH-HOLE |
| Terminal Position | SINGLE |
| Package | Transistor Outline, Vertical |
Compliance & Regulatory
| RoHS Status | Compliant |
| Lead-Free | Yes (Pb-Free) |
| ECCN | EAR99 |
| HTS Code | 8541.10.00.80 |
| Country of Origin | Mainland China |
Alternate & Equivalent Parts
No known alternates. Submit an RFQ and our team can suggest alternatives.
Frequently Asked Questions
How does the SiC construction of the STPSC8H065D reduce switching losses compared to silicon diodes?
Silicon carbide diodes have near-zero reverse recovery charge (Qrr), meaning virtually no current spike occurs when the diode turns off. In contrast, silicon PiN rectifiers can have Qrr values of hundreds of nanocoulombs at 8 A, causing significant switching losses at frequencies above 50 kHz. The STPSC8H065D therefore enables PFC and inverter designs operating at 100 kHz or higher with substantially lower heat dissipation.
For a 650 V PFC boost converter carrying 8 A, what forward voltage drop should the designer budget?
The STPSC8H065D specifies a maximum forward voltage of 1.75 V at its rated 8 A current, resulting in a worst-case conduction loss of approximately 14 W at full load. Typical forward voltage at lower currents is below 1.75 V, so real-world efficiency at partial loads of 2–5 A is better. Designers should also account for the temperature coefficient of VF when estimating losses at elevated junction temperatures.
When is the STPSC8H065D a better choice than a standard 650 V silicon ultrafast diode for the same PFC application?
In PFC stages switching at 65 kHz or higher, the STPSC8H065D outperforms silicon ultrafast diodes because its zero-recovery characteristic eliminates the turn-off current spike that adds to MOSFET switch losses. At 8 A average current and 650 V bus, this can represent a 5–15% total switching loss reduction, justifying the slightly higher component cost of the SiC device in efficiency-sensitive designs targeting 80 PLUS Gold or higher ratings.
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About STMicroelectronics
STMicroelectronics is a global semiconductor leader serving customers across the spectrum of electronics applications. ST's products are found in a wide range of applications including automotive, industrial, personal electronics, and communications.
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 1+ | $3.4600 | $3.46 |
| 50+ | $2.4200 | $121.00 |
| 250+ | $1.0200 | $255.00 |
| 1000+ | $0.9850 | $985.00 |
| 1500+ | $0.9650 | $1447.50 |
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